Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices

Tamilselvan Velusamy, Somak Mitra, Manuel Macias-Montero, Vladimir Svrcek, D Mariotti

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.
LanguageEnglish
Pages28207-28214
JournalACS Applied Materials & Interfaces
Volume7
Issue number51
DOIs
Publication statusPublished - 2015

Fingerprint

nanocrystals
chemistry
silicon
microplasmas
phosphorus
atmospheric pressure
radio frequencies
boron
ethyl alcohol
energy levels
photoluminescence

Keywords

  • p/n-SiNCs
  • surface engineering
  • surface chemistry
  • quantum yield
  • Fermi level
  • PV device

Cite this

Velusamy, Tamilselvan ; Mitra, Somak ; Macias-Montero, Manuel ; Svrcek, Vladimir ; Mariotti, D. / Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices. In: ACS Applied Materials & Interfaces. 2015 ; Vol. 7, No. 51. pp. 28207-28214.
@article{d43084d650584379b79383ed67ead534,
title = "Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices",
abstract = "Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.",
keywords = "p/n-SiNCs, surface engineering, surface chemistry, quantum yield, Fermi level, PV device",
author = "Tamilselvan Velusamy and Somak Mitra and Manuel Macias-Montero and Vladimir Svrcek and D Mariotti",
note = "PMID: 26624237",
year = "2015",
doi = "10.1021/acsami.5b06577",
language = "English",
volume = "7",
pages = "28207--28214",
journal = "ACS Applied Materials and Interfaces",
issn = "1944-8244",
number = "51",

}

Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices. / Velusamy, Tamilselvan; Mitra, Somak; Macias-Montero, Manuel; Svrcek, Vladimir; Mariotti, D.

In: ACS Applied Materials & Interfaces, Vol. 7, No. 51, 2015, p. 28207-28214.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices

AU - Velusamy, Tamilselvan

AU - Mitra, Somak

AU - Macias-Montero, Manuel

AU - Svrcek, Vladimir

AU - Mariotti, D

N1 - PMID: 26624237

PY - 2015

Y1 - 2015

N2 - Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.

AB - Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.

KW - p/n-SiNCs

KW - surface engineering

KW - surface chemistry

KW - quantum yield

KW - Fermi level

KW - PV device

U2 - 10.1021/acsami.5b06577

DO - 10.1021/acsami.5b06577

M3 - Article

VL - 7

SP - 28207

EP - 28214

JO - ACS Applied Materials and Interfaces

T2 - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

SN - 1944-8244

IS - 51

ER -