Varying Surface Chemistries for p-Doped and n-Doped Silicon Nanocrystals and Impact on Photovoltaic Devices

Tamilselvan Velusamy, Somak Mitra, Manuel Macias-Montero, Vladimir Svrcek, D Mariotti

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Doping of quantum confined nanocrystals offers unique opportunities to control the bandgap and the Fermi energy level. In this contribution, boron-doped (p-doped) and phosphorus-doped (n-doped) quantum confined silicon nanocrystals (SiNCs) are surface-engineered in ethanol by an atmospheric pressure radio frequency microplasma. We reveal that surface chemistries induced on the nanocrystals strongly depend on the type of dopants and result in considerable diverse optoelectronic properties (e.g., photoluminescence quantum yield is enhanced more than 6 times for n-type SiNCs). Changes in the position of the SiNCs Fermi levels are also studied and implications for photovoltaic application are discussed.
Original languageEnglish
Pages (from-to)28207-28214
JournalACS Applied Materials & Interfaces
Volume7
Issue number51
DOIs
Publication statusPublished - 2015

Keywords

  • p/n-SiNCs
  • surface engineering
  • surface chemistry
  • quantum yield
  • Fermi level
  • PV device

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