The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots

Sadegh Askari, Vladmir Svrcek, PD Maguire, D Mariotti

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Hydrogenation in amorphous silicon quantum dots (QDs) has a dramatic impact on the corresponding optical properties and band energy structure, leading to a quantum‐confined composite material with unique characteristics. The synthesis of a‐Si:H QDs is demonstrated with an atmospheric‐pressure plasma process, which allows for accurate control of a highly chemically reactive non‐equilibrium environment with temperatures well below the crystallization temperature of Si QDs.
LanguageEnglish
Pages8011-8016
JournalAdvanced Materials
Volume27
Issue number48
Early online date2 Nov 2015
DOIs
Publication statusPublished - 22 Dec 2015

Fingerprint

Quantum confinement
Amorphous silicon
Semiconductor quantum dots
Hydrogenation
Crystallization
Band structure
Atmospheric pressure
Optical properties
Plasmas
Temperature
Composite materials

Keywords

  • amorphous silicon
  • hydrogen alloying
  • photoluminescence
  • quantum dots

Cite this

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The Interplay of Quantum Confinement and Hydrogenation in Amorphous Silicon Quantum Dots. / Askari, Sadegh; Svrcek, Vladmir; Maguire, PD; Mariotti, D.

In: Advanced Materials, Vol. 27, No. 48, 22.12.2015, p. 8011-8016.

Research output: Contribution to journalArticle

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AU - Svrcek, Vladmir

AU - Maguire, PD

AU - Mariotti, D

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KW - amorphous silicon

KW - hydrogen alloying

KW - photoluminescence

KW - quantum dots

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