The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films

Research output: Contribution to journalArticle

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Abstract

Silicon-doped diamond-like carbon (DLC) films with a Si content of up to 20.2 at.% were grown on Al2O3-TiC substrate by plasma-enhanced chemical vapour deposition. The influence of Si addition on the bonding structure, nanomechanical and corrosion behaviour of the DLC films was investigated by Raman and X-ray photoelectron (XPS) spectroscopy,nano-indentation, potentiodynamic and electrochemical impedance spectroscopy (EIS). Silicon addition promoted the formation of sp(3) bonding and reduced the hardness. The deterioration of the nanomechanical properties is related to the increased hydrogen contentin the films, leading to the formation of a polymeric sp(3) CHn structure. The high hydrogen concentration in the Si-containing DLC samples was established by the increased Raman background slope. The EIS were analysed within the context of an equivalent circuit, whichincorporated two time constants representing the DLC coating and the solution/Al2O3-TiC interface, Introduction of Si in the DLC led to significant improvements in the corrosion resistance of DLC, as revealed by increase in the charge transfer resistance and reduction in the anodic current of the polarisation curves. Films with a thickness of 20 nm remained intact after the polarisation scan when the Si concentration was increased above 11.8 at.%. The improvements in corrosion resistance are related to the formation of a passivationlayer, which fills the pores present in the films. (C) 2002 Elsevier Science B.V. All rights reserved.
LanguageEnglish
Pages1074-1080
JournalDiamond and Related Materials
Volume11
Issue number3-6, S
DOIs
Publication statusPublished - Mar 2002

Fingerprint

Diamond
Carbon films
Diamonds
Carbon
Thin films
Diamond like carbon films
Silicon
Electrochemical impedance spectroscopy
Corrosion resistance
Hydrogen
Polarization
Nanoindentation
Plasma enhanced chemical vapor deposition
Photoelectrons
Equivalent circuits
Deterioration
Charge transfer
X ray photoelectron spectroscopy
Hardness
Spectroscopy

Keywords

  • electrochemical impedance
  • pinholes
  • Raman spectroscopy
  • hardness
  • corrosion
  • Si-doped diamond-like carbon (DLC)

Cite this

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title = "The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films",
abstract = "Silicon-doped diamond-like carbon (DLC) films with a Si content of up to 20.2 at.{\%} were grown on Al2O3-TiC substrate by plasma-enhanced chemical vapour deposition. The influence of Si addition on the bonding structure, nanomechanical and corrosion behaviour of the DLC films was investigated by Raman and X-ray photoelectron (XPS) spectroscopy,nano-indentation, potentiodynamic and electrochemical impedance spectroscopy (EIS). Silicon addition promoted the formation of sp(3) bonding and reduced the hardness. The deterioration of the nanomechanical properties is related to the increased hydrogen contentin the films, leading to the formation of a polymeric sp(3) CHn structure. The high hydrogen concentration in the Si-containing DLC samples was established by the increased Raman background slope. The EIS were analysed within the context of an equivalent circuit, whichincorporated two time constants representing the DLC coating and the solution/Al2O3-TiC interface, Introduction of Si in the DLC led to significant improvements in the corrosion resistance of DLC, as revealed by increase in the charge transfer resistance and reduction in the anodic current of the polarisation curves. Films with a thickness of 20 nm remained intact after the polarisation scan when the Si concentration was increased above 11.8 at.{\%}. The improvements in corrosion resistance are related to the formation of a passivationlayer, which fills the pores present in the films. (C) 2002 Elsevier Science B.V. All rights reserved.",
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author = "P Papakonstantinou and JF Zhao and P Lemoine and ET McAdams and JAD McLaughlin",
note = "12th European Conference on Diamond Diamond-Like Materials Carbon Nanotubes Nitrides and Silicon Carbide (Diamond 2001), BUDAPEST, HUNGARY, SEP 02-07, 2001",
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The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films. / Papakonstantinou, P; Zhao, JF; Lemoine, P; McAdams, ET; McLaughlin, JAD.

In: Diamond and Related Materials, Vol. 11, No. 3-6, S, 03.2002, p. 1074-1080.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effects of Si incorporation on the electrochemical and nanomechanical properties of DLC thin films

AU - Papakonstantinou, P

AU - Zhao, JF

AU - Lemoine, P

AU - McAdams, ET

AU - McLaughlin, JAD

N1 - 12th European Conference on Diamond Diamond-Like Materials Carbon Nanotubes Nitrides and Silicon Carbide (Diamond 2001), BUDAPEST, HUNGARY, SEP 02-07, 2001

PY - 2002/3

Y1 - 2002/3

N2 - Silicon-doped diamond-like carbon (DLC) films with a Si content of up to 20.2 at.% were grown on Al2O3-TiC substrate by plasma-enhanced chemical vapour deposition. The influence of Si addition on the bonding structure, nanomechanical and corrosion behaviour of the DLC films was investigated by Raman and X-ray photoelectron (XPS) spectroscopy,nano-indentation, potentiodynamic and electrochemical impedance spectroscopy (EIS). Silicon addition promoted the formation of sp(3) bonding and reduced the hardness. The deterioration of the nanomechanical properties is related to the increased hydrogen contentin the films, leading to the formation of a polymeric sp(3) CHn structure. The high hydrogen concentration in the Si-containing DLC samples was established by the increased Raman background slope. The EIS were analysed within the context of an equivalent circuit, whichincorporated two time constants representing the DLC coating and the solution/Al2O3-TiC interface, Introduction of Si in the DLC led to significant improvements in the corrosion resistance of DLC, as revealed by increase in the charge transfer resistance and reduction in the anodic current of the polarisation curves. Films with a thickness of 20 nm remained intact after the polarisation scan when the Si concentration was increased above 11.8 at.%. The improvements in corrosion resistance are related to the formation of a passivationlayer, which fills the pores present in the films. (C) 2002 Elsevier Science B.V. All rights reserved.

AB - Silicon-doped diamond-like carbon (DLC) films with a Si content of up to 20.2 at.% were grown on Al2O3-TiC substrate by plasma-enhanced chemical vapour deposition. The influence of Si addition on the bonding structure, nanomechanical and corrosion behaviour of the DLC films was investigated by Raman and X-ray photoelectron (XPS) spectroscopy,nano-indentation, potentiodynamic and electrochemical impedance spectroscopy (EIS). Silicon addition promoted the formation of sp(3) bonding and reduced the hardness. The deterioration of the nanomechanical properties is related to the increased hydrogen contentin the films, leading to the formation of a polymeric sp(3) CHn structure. The high hydrogen concentration in the Si-containing DLC samples was established by the increased Raman background slope. The EIS were analysed within the context of an equivalent circuit, whichincorporated two time constants representing the DLC coating and the solution/Al2O3-TiC interface, Introduction of Si in the DLC led to significant improvements in the corrosion resistance of DLC, as revealed by increase in the charge transfer resistance and reduction in the anodic current of the polarisation curves. Films with a thickness of 20 nm remained intact after the polarisation scan when the Si concentration was increased above 11.8 at.%. The improvements in corrosion resistance are related to the formation of a passivationlayer, which fills the pores present in the films. (C) 2002 Elsevier Science B.V. All rights reserved.

KW - electrochemical impedance

KW - pinholes

KW - Raman spectroscopy

KW - hardness

KW - corrosion

KW - Si-doped diamond-like carbon (DLC)

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T2 - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 3-6, S

ER -