The effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

AA Ogwu; RW Lamberton; PD Maguire; JAD McLaughlin

The effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

AA Ogwu, RW Lamberton, PD Maguire, JAD McLaughlin

Research output: Contribution to journal › Article › peer-review

Abstract

An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 degrees C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.

Original language	English
Pages (from-to)	981-987
Journal	JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume	32
Issue number	9
Publication status	Published (in print/issue) - May 1999

Cite this

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title = "The effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)",

abstract = "An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 degrees C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.",

author = "AA Ogwu and RW Lamberton and PD Maguire and JAD McLaughlin",

year = "1999",

month = may,

language = "English",

volume = "32",

pages = "981--987",

journal = "JOURNAL OF PHYSICS D-APPLIED PHYSICS",

issn = "1361-6463",

publisher = "Institute of Physics",

number = "9",

}

The effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD). / Ogwu, AA; Lamberton, RW; Maguire, PD et al.
In: JOURNAL OF PHYSICS D-APPLIED PHYSICS, Vol. 32, No. 9, 05.1999, p. 981-987.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - The effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

AU - Ogwu, AA

AU - Lamberton, RW

AU - Maguire, PD

AU - McLaughlin, JAD

PY - 1999/5

Y1 - 1999/5

N2 - An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 degrees C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.

AB - An investigation of the dependence of the thermal stability of DLC (a-C:H) and silicon-modified DLC (a-C:H:Si) films on film-deposition conditions has been conducted. An interpretation based on plasma chemistry, x-ray photoelectron spectroscopy, confocal Raman spectroscopy and substrate-bias-voltage changes is proposed to explain the thermally induced structural modifications in the films between 200 and 600 degrees C. Our recent finding is expected to be beneficial to those designing thermal annealing schedules for reducing or eliminating residual stresses in the films.

M3 - Article

SN - 1361-6463

VL - 32

SP - 981

EP - 987

JO - JOURNAL OF PHYSICS D-APPLIED PHYSICS

JF - JOURNAL OF PHYSICS D-APPLIED PHYSICS

IS - 9

ER -

The effect of the substrate bias on the Raman spectra and thermal stability of diamond-like carbon (DLC) and silicon-modified DLC films prepared by plasma-enhanced chemical vapour deposition (PECVD)

Abstract

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