Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals

Somak Mitra, Vladimir Svrcek, Manuel Macias-Montero, Tamilselvan Velusamy, D Mariotti

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Abstract

In this work we report on temperature-dependent photoluminescence measurements (15–300 K), which have allowed probing radiative transitions and understanding of the appearance of various transitions. We further demonstrate that transitions associated with oxide in SiNCs show characteristic vibronic peaks that vary with surface characteristics. In particular we study differences and similarities between silicon nanocrystals (SiNCs) derived from porous silicon and SiNCs that were surface-treated using a radio-frequency (RF) microplasma system.
Original languageEnglish
Article number27727
Number of pages9
JournalScientific Reports
Volume6
Early online date14 Jun 2016
Publication statusE-pub ahead of print - 14 Jun 2016

Keywords

  • silicon nanocrystals
  • photoluminescence
  • plasma

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  • Cite this

    Mitra, S., Svrcek, V., Macias-Montero, M., Velusamy, T., & Mariotti, D. (2016). Temperature-dependent photoluminescence of surface-engineered silicon nanocrystals. Scientific Reports, 6, [27727].