Abstract
In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.
Original language | English |
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Title of host publication | Solid State Physics - Proceedings of the 58th DAE Solid State Physics Symposium 2013 |
Publisher | American Institute of Physics Inc. |
Pages | 693-695 |
Number of pages | 3 |
Volume | 1591 |
ISBN (Print) | 9780735412255 |
DOIs | |
Publication status | Published (in print/issue) - 1 Jan 2014 |
Event | 58th DAE Solid State Physics Symposium 2013 - Patiala, Punjab, India Duration: 17 Dec 2013 → 21 Dec 2013 |
Conference
Conference | 58th DAE Solid State Physics Symposium 2013 |
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Country/Territory | India |
City | Patiala, Punjab |
Period | 17/12/13 → 21/12/13 |
Keywords
- Chemiresistor sensor
- Scanning electron microscopy (SEM)