TY - JOUR
T1 - Substrate Effects on the Growth of Multiwalled Carbon Nanotubes by Thermal Chemical Vapor Deposition
AU - Mathur, A
AU - Roy, SS
AU - Wadhwa, S
AU - Ray, SC
AU - Hazra, K
AU - Misra, DS
AU - Mitra, SK
AU - McLaughlin, JAD
AU - Thundat, T
PY - 2012
Y1 - 2012
N2 - Different shapes and sizes of multiwalled carbon nanotubes (MWCNTs) were prepared by the thermal chemical vapor deposition (CVD) process using ferrocene and toluene on conducting (cobalt/silicon), semiconducting (silicon) and insulating (quartz) substrates to investigate the change in surface morphology, microstructure and electron field emission properties. The lengths and diameters of the MWCNTs were estimated from the scanning and transmission electron microscopy, revealing that although the lengths were not identical, changing within the range 150-350 ?m, there was no significant change in diameter. The I D/I G and I D/I G' ratios were obtained from Raman spectra and found to be higher at the tip rather than the sidewalls of MWCNTs grown on different substrates. Electron field emission was also higher for the CNTs grown on the conducting substrate, rather than the semiconducting substrate. Turn-on electric fields obtained from the F-N plot were measured as 0.4 V/?m and 0.7 V/?m for CNTs grown on cobalt/silicon and silicon substrate respectively. © 2012 American Scientific Publishers. All Rights Reserved.
AB - Different shapes and sizes of multiwalled carbon nanotubes (MWCNTs) were prepared by the thermal chemical vapor deposition (CVD) process using ferrocene and toluene on conducting (cobalt/silicon), semiconducting (silicon) and insulating (quartz) substrates to investigate the change in surface morphology, microstructure and electron field emission properties. The lengths and diameters of the MWCNTs were estimated from the scanning and transmission electron microscopy, revealing that although the lengths were not identical, changing within the range 150-350 ?m, there was no significant change in diameter. The I D/I G and I D/I G' ratios were obtained from Raman spectra and found to be higher at the tip rather than the sidewalls of MWCNTs grown on different substrates. Electron field emission was also higher for the CNTs grown on the conducting substrate, rather than the semiconducting substrate. Turn-on electric fields obtained from the F-N plot were measured as 0.4 V/?m and 0.7 V/?m for CNTs grown on cobalt/silicon and silicon substrate respectively. © 2012 American Scientific Publishers. All Rights Reserved.
U2 - 10.1166/asl.2012.3314
DO - 10.1166/asl.2012.3314
M3 - Article
SN - 1546-1963
VL - 7
SP - 21
JO - Journal of Computational and Theoretical Nanoscience
JF - Journal of Computational and Theoretical Nanoscience
IS - 1
ER -