TY - JOUR
T1 - Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors
AU - Kalita, Sanjib
AU - Prajapati, Ashish
AU - Roy, Susanta Sinha
AU - Banerjee, Jyoti Prasad
AU - McLaughlin, James Andrew
AU - Mukhopadhyay, Subhadeep
PY - 2016
Y1 - 2016
N2 - Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.
AB - Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.
U2 - 10.37591/josdc.v3i2.2093
DO - 10.37591/josdc.v3i2.2093
M3 - Article
VL - 3
SP - 32
EP - 36
JO - Journal of Semiconductor Devices and Circuits
JF - Journal of Semiconductor Devices and Circuits
IS - 2
ER -