Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors

Sanjib Kalita; Ashish Prajapati; Susanta Sinha Roy; Jyoti Prasad Banerjee; James Andrew McLaughlin; Subhadeep Mukhopadhyay

doi:10.37591/josdc.v3i2.2093

Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors

Sanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep Mukhopadhyay

Research output: Contribution to journal › Article › peer-review

Abstract

Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.

Original language	English
Pages (from-to)	32-36
Number of pages	5
Journal	Journal of Semiconductor Devices and Circuits
Volume	3
Issue number	2
DOIs	https://doi.org/10.37591/josdc.v3i2.2093
Publication status	Published (in print/issue) - 2016

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@article{a02b3859f81843be9a876910fe66ddc5,

title = "Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors",

abstract = "Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.",

author = "Sanjib Kalita and Ashish Prajapati and Roy, {Susanta Sinha} and Banerjee, {Jyoti Prasad} and McLaughlin, {James Andrew} and Subhadeep Mukhopadhyay",

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language = "English",

volume = "3",

pages = "32--36",

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AU - Kalita, Sanjib

AU - Prajapati, Ashish

AU - Roy, Susanta Sinha

AU - Banerjee, Jyoti Prasad

AU - McLaughlin, James Andrew

AU - Mukhopadhyay, Subhadeep

PY - 2016

Y1 - 2016

N2 - Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.

AB - Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.

U2 - 10.37591/josdc.v3i2.2093

DO - 10.37591/josdc.v3i2.2093

M3 - Article

VL - 3

SP - 32

EP - 36

IS - 2

ER -

Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors

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