Simulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.
|Number of pages||5|
|Journal||Journal of Semiconductor Devices and Circuits|
|Publication status||Published (in print/issue) - 2016|