Abstract
Language | English |
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Number of pages | 12 |
Journal | Nanomaterials |
Volume | 8 |
Issue number | 12 |
DOIs | |
Publication status | Published - 12 Dec 2018 |
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Keywords
- InN/p-GaN heterojunction
- interface
- photovoltaics
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Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. / Svrcek, Vladimir; Kolenda, Marek; Kadys, Arunas; Reklaitis, Ignas; Dobrovolskas, Darius; Malinauskas, Tadas; Lozach, Mickael; Mariotti, Davide; Strassburg, Martin; Tomašiūnas, Roland.
In: Nanomaterials, Vol. 8, No. 12, 12.12.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage
AU - Svrcek, Vladimir
AU - Kolenda, Marek
AU - Kadys, Arunas
AU - Reklaitis, Ignas
AU - Dobrovolskas, Darius
AU - Malinauskas, Tadas
AU - Lozach, Mickael
AU - Mariotti, Davide
AU - Strassburg, Martin
AU - Tomašiūnas, Roland
PY - 2018/12/12
Y1 - 2018/12/12
N2 - In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.
AB - In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.
KW - InN/p-GaN heterojunction
KW - interface
KW - photovoltaics
U2 - 10.3390/nano8121039
DO - 10.3390/nano8121039
M3 - Article
VL - 8
JO - Nanomaterials
T2 - Nanomaterials
JF - Nanomaterials
SN - 2079-4991
IS - 12
ER -