Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Vladimir Svrcek, Marek Kolenda, Arunas Kadys, Ignas Reklaitis, Darius Dobrovolskas, Tadas Malinauskas, Mickael Lozach, Davide Mariotti, Martin Strassburg, Roland Tomašiūnas

Research output: Contribution to journalArticle

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Abstract

In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.
LanguageEnglish
Number of pages12
JournalNanomaterials
Volume8
Issue number12
DOIs
Publication statusPublished - 12 Dec 2018

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heterojunctions
augmentation
electric potential
multiplication
vapor phase epitaxy
avalanches
quantum efficiency
unity
charge carriers
depletion
electrons

Keywords

  • InN/p-GaN heterojunction
  • interface
  • photovoltaics

Cite this

Svrcek, V., Kolenda, M., Kadys, A., Reklaitis, I., Dobrovolskas, D., Malinauskas, T., ... Tomašiūnas, R. (2018). Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. Nanomaterials, 8(12). https://doi.org/10.3390/nano8121039
Svrcek, Vladimir ; Kolenda, Marek ; Kadys, Arunas ; Reklaitis, Ignas ; Dobrovolskas, Darius ; Malinauskas, Tadas ; Lozach, Mickael ; Mariotti, Davide ; Strassburg, Martin ; Tomašiūnas, Roland. / Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. In: Nanomaterials. 2018 ; Vol. 8, No. 12.
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abstract = "In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.",
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Svrcek, V, Kolenda, M, Kadys, A, Reklaitis, I, Dobrovolskas, D, Malinauskas, T, Lozach, M, Mariotti, D, Strassburg, M & Tomašiūnas, R 2018, 'Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage', Nanomaterials, vol. 8, no. 12. https://doi.org/10.3390/nano8121039

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage. / Svrcek, Vladimir; Kolenda, Marek; Kadys, Arunas; Reklaitis, Ignas; Dobrovolskas, Darius; Malinauskas, Tadas; Lozach, Mickael; Mariotti, Davide; Strassburg, Martin; Tomašiūnas, Roland.

In: Nanomaterials, Vol. 8, No. 12, 12.12.2018.

Research output: Contribution to journalArticle

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T1 - Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

AU - Svrcek, Vladimir

AU - Kolenda, Marek

AU - Kadys, Arunas

AU - Reklaitis, Ignas

AU - Dobrovolskas, Darius

AU - Malinauskas, Tadas

AU - Lozach, Mickael

AU - Mariotti, Davide

AU - Strassburg, Martin

AU - Tomašiūnas, Roland

PY - 2018/12/12

Y1 - 2018/12/12

N2 - In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.

AB - In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.

KW - InN/p-GaN heterojunction

KW - interface

KW - photovoltaics

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