Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Vladimir Svrcek; Marek Kolenda; Arunas Kadys; Ignas Reklaitis; Darius Dobrovolskas; Tadas Malinauskas; Mickael Lozach; Davide Mariotti; Martin Strassburg; Roland Tomašiūnas

doi:10.3390/nano8121039

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Vladimir Svrcek, Marek Kolenda, Arunas Kadys, Ignas Reklaitis, Darius Dobrovolskas, Tadas Malinauskas, Mickael Lozach, Davide Mariotti, Martin Strassburg, Roland Tomašiūnas

School of Engineering

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Abstract

In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.

Original language	English
Number of pages	12
Journal	Nanomaterials
Volume	8
Issue number	12
DOIs	https://doi.org/10.3390/nano8121039
Publication status	Published (in print/issue) - 12 Dec 2018

Keywords

InN/p-GaN heterojunction
interface
photovoltaics

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10.3390/nano8121039

manuscript.v5raccepted chnges (002)Author Accepted Manuscript, 1 MB

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title = "Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage",

abstract = "In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.",

keywords = "InN/p-GaN heterojunction, interface, photovoltaics",

author = "Vladimir Svrcek and Marek Kolenda and Arunas Kadys and Ignas Reklaitis and Darius Dobrovolskas and Tadas Malinauskas and Mickael Lozach and Davide Mariotti and Martin Strassburg and Roland Toma{\v s}iūnas",

year = "2018",

month = dec,

day = "12",

doi = "10.3390/nano8121039",

language = "English",

volume = "8",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute",

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TY - JOUR

T1 - Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

AU - Svrcek, Vladimir

AU - Kolenda, Marek

AU - Kadys, Arunas

AU - Reklaitis, Ignas

AU - Dobrovolskas, Darius

AU - Malinauskas, Tadas

AU - Lozach, Mickael

AU - Mariotti, Davide

AU - Strassburg, Martin

AU - Tomašiūnas, Roland

PY - 2018/12/12

Y1 - 2018/12/12

N2 - In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.

AB - In this paper, a superior-quality InN/p-GaN interface grown using pulsed metalorganic vapor-phase epitaxy (MOVPE) is demonstrated. The InN/p-GaN heterojunction interface based on high-quality InN (electron concentration 5.19 × 1018 cm−3 and mobility 980 cm2/(V s)) showed good rectifying behavior. The heterojunction depletion region width was estimated to be 22.8 nm and showed the ability for charge carrier extraction without external electrical field (unbiased). Under reverse bias, the external quantum efficiency (EQE) in the blue spectral region (300–550 nm) can be enhanced significantly and exceeds unity. Avalanche and carrier multiplication phenomena were used to interpret the exclusive photoelectric features of the InN/p-GaN heterojunction behavior.

KW - InN/p-GaN heterojunction

KW - interface

KW - photovoltaics

U2 - 10.3390/nano8121039

DO - 10.3390/nano8121039

M3 - Article

SN - 2079-4991

VL - 8

JO - Nanomaterials

JF - Nanomaterials

IS - 12

ER -

Significant Carrier Extraction Enhancement at the Interface of an InN/p-GaN Heterojunction under Reverse Bias Voltage

Abstract

Keywords

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