SHI induced defects in chemically synthesized graphene oxide for hydrogen storage applications

Preetam K. Sharma, Vinay Sharma, Rajveer Singh Rajaura, Subodh Srivastava, S. S. Sharma, M. Singh, Y. K. Vijay

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Graphene, due to its unique properties arising from the single carbon layer, is a potential candidate for applications in a variety of fields including sensors, photovoltaics and energy storage. The atomic structure and morphology of the carbon nanomaterials especially graphene can be tailored by energetic ionic irradiation. As graphene sheet is very stable, the surface have less reactivity as compared to the edges of the sheets. By surface modification with energetic ion-beams additional dangling bonds can be formed to enhance the surface activity of the graphene film which could be exploited in a variety of applications. In the present work, graphene oxide was synthesized by improved Hummers' Method. The irradiation was done with Ag+ ions carrying energy 100MeV with the fluence of 3×1013. Raman spectrum of graphene irradiated by Ag+ beam shows additional disordered peaks of D and D+G bands. There is also a decrease in the intensity of D band. AFM images depict the increase in the surface roughness of the films. This can be attributed to the increase in the defects in the flakes and intermixing of adjacent layers by irradiation.

Original languageEnglish
Title of host publicationInternational Conference on Condensed Matter and Applied Physics, ICC 2015
Subtitle of host publicationProceeding of International Conference on Condensed Matter and Applied Physics
EditorsManoj Singh Shekhawat, Sudhir Bhardwaj, Bhuvneshwer Suthar
PublisherAmerican Institute of Physics Inc.
Volume1728
ISBN (Electronic)9780735413757
DOIs
Publication statusPublished - 6 May 2016
EventInternational Conference on Condensed Matter and Applied Physics, ICC 2015 - Bikaner, India
Duration: 30 Oct 201531 Oct 2015

Conference

ConferenceInternational Conference on Condensed Matter and Applied Physics, ICC 2015
CountryIndia
CityBikaner
Period30/10/1531/10/15

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  • Cite this

    Sharma, P. K., Sharma, V., Rajaura, R. S., Srivastava, S., Sharma, S. S., Singh, M., & Vijay, Y. K. (2016). SHI induced defects in chemically synthesized graphene oxide for hydrogen storage applications. In M. S. Shekhawat, S. Bhardwaj, & B. Suthar (Eds.), International Conference on Condensed Matter and Applied Physics, ICC 2015: Proceeding of International Conference on Condensed Matter and Applied Physics (Vol. 1728). [020531] American Institute of Physics Inc.. https://doi.org/10.1063/1.4946582