Selective H2S sensing characteristics of CuO modified WO 3 thin films

Niranjan S. Ramgir; C. P. Goyal; P. K. Sharma; U. K. Goutam; S. Bhattacharya; N. Datta; M. Kaur; A. K. Debnath; D. K. Aswal; S. K. Gupta

doi:10.1016/j.snb.2013.07.052

Selective H₂S sensing characteristics of CuO modified WO ₃ thin films

Niranjan S. Ramgir, C. P. Goyal, P. K. Sharma, U. K. Goutam, S. Bhattacharya, N. Datta, M. Kaur, A. K. Debnath, D. K. Aswal, S. K. Gupta

Research output: Contribution to journal › Article › peer-review

98 Citations (Scopus)

Abstract

An H₂S sensor based on randomly distributed nano p-n junction between CuO and WO₃ has been demonstrated. Modification with CuO resulted in enhanced response kinetics towards H₂S with high selectivity. CuO modified WO₃ thin films corresponding to 2.25 at% of Cu exhibited a sensor response of 534 in comparison to that of pure WO ₃ thin films that exhibited a sensor response of 21 towards 10 ppm of H₂S at an operating temperature of 300 C. This enhanced response kinetics has been attributed to the formation of random nano p-n junctions distributed over the surface of the sensor film and the unique interaction of CuO with H₂S. At elevated temperature exposure to H₂S resulted in the conversion of CuO to CuS, which being metallic in nature causes a drastic change in the resistance of the sensor films. Formation of nano p-n junctions is supported by the increase in the sensor resistance upon CuO modification and is further corroborated by the work function studies.

Original language	English
Pages (from-to)	525-532
Number of pages	8
Journal	Sensors and Actuators, B: Chemical
Volume	188
DOIs	https://doi.org/10.1016/j.snb.2013.07.052
Publication status	Published (in print/issue) - 26 Aug 2013

Keywords

CuO
Gas sensing
HS
Nano p-n junction
WO

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10.1016/j.snb.2013.07.052

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title = "Selective H2S sensing characteristics of CuO modified WO 3 thin films",

abstract = "An H2S sensor based on randomly distributed nano p-n junction between CuO and WO3 has been demonstrated. Modification with CuO resulted in enhanced response kinetics towards H2S with high selectivity. CuO modified WO3 thin films corresponding to 2.25 at% of Cu exhibited a sensor response of 534 in comparison to that of pure WO 3 thin films that exhibited a sensor response of 21 towards 10 ppm of H2S at an operating temperature of 300 C. This enhanced response kinetics has been attributed to the formation of random nano p-n junctions distributed over the surface of the sensor film and the unique interaction of CuO with H2S. At elevated temperature exposure to H2S resulted in the conversion of CuO to CuS, which being metallic in nature causes a drastic change in the resistance of the sensor films. Formation of nano p-n junctions is supported by the increase in the sensor resistance upon CuO modification and is further corroborated by the work function studies.",

keywords = "CuO, Gas sensing, HS, Nano p-n junction, WO",

author = "Ramgir, {Niranjan S.} and Goyal, {C. P.} and Sharma, {P. K.} and Goutam, {U. K.} and S. Bhattacharya and N. Datta and M. Kaur and Debnath, {A. K.} and Aswal, {D. K.} and Gupta, {S. K.}",

year = "2013",

month = aug,

day = "26",

doi = "10.1016/j.snb.2013.07.052",

language = "English",

volume = "188",

pages = "525--532",

journal = "Sensors and Actuators, B: Chemical",

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T1 - Selective H2S sensing characteristics of CuO modified WO 3 thin films

AU - Ramgir, Niranjan S.

AU - Goyal, C. P.

AU - Sharma, P. K.

AU - Goutam, U. K.

AU - Bhattacharya, S.

AU - Datta, N.

AU - Kaur, M.

AU - Debnath, A. K.

AU - Aswal, D. K.

AU - Gupta, S. K.

PY - 2013/8/26

Y1 - 2013/8/26

N2 - An H2S sensor based on randomly distributed nano p-n junction between CuO and WO3 has been demonstrated. Modification with CuO resulted in enhanced response kinetics towards H2S with high selectivity. CuO modified WO3 thin films corresponding to 2.25 at% of Cu exhibited a sensor response of 534 in comparison to that of pure WO 3 thin films that exhibited a sensor response of 21 towards 10 ppm of H2S at an operating temperature of 300 C. This enhanced response kinetics has been attributed to the formation of random nano p-n junctions distributed over the surface of the sensor film and the unique interaction of CuO with H2S. At elevated temperature exposure to H2S resulted in the conversion of CuO to CuS, which being metallic in nature causes a drastic change in the resistance of the sensor films. Formation of nano p-n junctions is supported by the increase in the sensor resistance upon CuO modification and is further corroborated by the work function studies.

AB - An H2S sensor based on randomly distributed nano p-n junction between CuO and WO3 has been demonstrated. Modification with CuO resulted in enhanced response kinetics towards H2S with high selectivity. CuO modified WO3 thin films corresponding to 2.25 at% of Cu exhibited a sensor response of 534 in comparison to that of pure WO 3 thin films that exhibited a sensor response of 21 towards 10 ppm of H2S at an operating temperature of 300 C. This enhanced response kinetics has been attributed to the formation of random nano p-n junctions distributed over the surface of the sensor film and the unique interaction of CuO with H2S. At elevated temperature exposure to H2S resulted in the conversion of CuO to CuS, which being metallic in nature causes a drastic change in the resistance of the sensor films. Formation of nano p-n junctions is supported by the increase in the sensor resistance upon CuO modification and is further corroborated by the work function studies.

KW - CuO

KW - Gas sensing

KW - HS

KW - Nano p-n junction

KW - WO

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DO - 10.1016/j.snb.2013.07.052

M3 - Article

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SN - 0925-4005

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JO - Sensors and Actuators, B: Chemical

JF - Sensors and Actuators, B: Chemical

ER -

Selective H₂S sensing characteristics of CuO modified WO ₃ thin films

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Keywords

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