Resistive switching behavior in oxygen ion irradiated TiO2-x films

A. Barman, C. P. Saini, P. K. Sarkar, G. Bhattacharjee, G. Bhattacharya, S. Srivastava, B. Satpati, D. Kanjilal, S. K. Ghosh, S. Dhar, A. Kanjilal

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16 Citations (Scopus)


The room temperature resistive switching behavior in 50 keV O+-ion irradiated TiO2-x layers at an ion fluence of 5 × 1016 ions cm-2 is reported. A clear transformation from columnar to layered polycrystalline films is revealed by transmission electron microscopy with increasing ion fluence, while the complementary electron energy loss spectroscopy suggests an evolution of oxygen vacancy (OV) in TiO2-x matrix. This is further verified by determining electron density with the help of x-ray reflectivity. Both local and device current-voltage measurements illustrate that the ion-beam induced OVs play a key role in bistable resistive switching mechanism.

Original languageEnglish
Article number065306
JournalJournal of Physics D: Applied Physics
Issue number6
Publication statusPublished (in print/issue) - 23 Jan 2018

Bibliographical note

Funding Information:
The authors, especially AK would like to acknowledge the financial support received from Shiv Nadar University and also the Department of Science and Technology (DST), India under project no. DST/EMR/2014/000971. The help received from the scientists at IUAC, New Delhi, is acknowledged. Authors would also like to thank DST and SINP, India for facilitating the experiments at the Indian Beamline of Photon Factory, KEK, Japan.

Publisher Copyright:
© 2018 IOP Publishing Ltd.

Gourav non-member of staff at publication, no AAM available


  • ion-irradiation
  • oxygen vacancy
  • resistive switching
  • TiO-x


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