Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method

Gourav Bhattacharya; Kamatchi Jothiramalingam Sankaran; Shashi B. Srivastava; Joseph Palathinkal Thomas; Sujit Deshmukh; Paulius Pobedinskas; Samarendra P. Singh; Kam Tong Leung; Marlies K. Van Bael; Ken Haenen; Susanta Sinha Roy

doi:10.1016/j.electacta.2017.06.030

Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method

Gourav Bhattacharya, Kamatchi Jothiramalingam Sankaran, Shashi B. Srivastava, Joseph Palathinkal Thomas, Sujit Deshmukh, Paulius Pobedinskas, Samarendra P. Singh, Kam Tong Leung, Marlies K. Van Bael, Ken Haenen, Susanta Sinha Roy

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

One-dimensional diamond nanorods (DNRs) were fabricated from nanocrystalline diamond films using a facile combination of microwave plasma enhanced chemical vapor deposition and reactive ion etching (RIE) techniques. Structural and electrochemical properties of undoped and nitrogen doped DNRs were thoroughly investigated. A cyclic voltammetry study revealed the increase in density of charge carriers when doped with nitrogen. Mott Schottky analysis was implemented for the quantitative determination of the flat band potential, effective density of charge carriers and energy band diagram, which revealed that the undoped sample exhibit p-type behavior, whereas the nitrogen doped sample showed n-type behavior. Defect related damage due to graphitization and hydrogen termination in the undoped DNRs (during RIE) was correlated with the p-type conductivity. Nitrogen doping induces n-type conductivity and enhances effective density of charge carriers.

Original language	English
Pages (from-to)	68-74
Number of pages	7
Journal	Electrochimica Acta
Volume	246
Early online date	6 Jun 2017
DOIs	https://doi.org/10.1016/j.electacta.2017.06.030
Publication status	Published (in print/issue) - 20 Aug 2017

Bibliographical note

Funding Information:
Gourav Bhattacharya, Shashi B. Srivastava and Sujit Deshmukh are indebted to Shiv Nadar University for providing scholarships. Kamatchi Jothiramalingam Sankaran and Paulius Pobedinskas are Postdoctoral Fellows of the Research Foundation-Flanders (FWO). The authors are also thankful for financial support from the Alexander von Humboldt Foundation for purchasing the contact angle measurement system and Mr. B. Ruttens, Ms. Hilde Pellaers and Prof. Jan D'Haen for technical and experimental assistance. The Hercules Foundation Flanders is acknowledged for financial support of the Raman equipment.

Publisher Copyright:
© 2017 Elsevier Ltd

Keywords

diamond nanorods
mott schotkky analysis
nitrogen doping
reactive ion etching

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10.1016/j.electacta.2017.06.030

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Bhattacharya, G., Jothiramalingam Sankaran, K., Srivastava, S. B., Thomas, J. P., Deshmukh, S., Pobedinskas, P., Singh, S. P., Leung, K. T., Van Bael, M. K., Haenen, K., & Roy, S. S. (2017). Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method. Electrochimica Acta, 246, 68-74. https://doi.org/10.1016/j.electacta.2017.06.030

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title = "Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method",

abstract = "One-dimensional diamond nanorods (DNRs) were fabricated from nanocrystalline diamond films using a facile combination of microwave plasma enhanced chemical vapor deposition and reactive ion etching (RIE) techniques. Structural and electrochemical properties of undoped and nitrogen doped DNRs were thoroughly investigated. A cyclic voltammetry study revealed the increase in density of charge carriers when doped with nitrogen. Mott Schottky analysis was implemented for the quantitative determination of the flat band potential, effective density of charge carriers and energy band diagram, which revealed that the undoped sample exhibit p-type behavior, whereas the nitrogen doped sample showed n-type behavior. Defect related damage due to graphitization and hydrogen termination in the undoped DNRs (during RIE) was correlated with the p-type conductivity. Nitrogen doping induces n-type conductivity and enhances effective density of charge carriers.",

keywords = "diamond nanorods, mott schotkky analysis, nitrogen doping, reactive ion etching",

author = "Gourav Bhattacharya and {Jothiramalingam Sankaran}, Kamatchi and Srivastava, {Shashi B.} and Thomas, {Joseph Palathinkal} and Sujit Deshmukh and Paulius Pobedinskas and Singh, {Samarendra P.} and Leung, {Kam Tong} and {Van Bael}, {Marlies K.} and Ken Haenen and Roy, {Susanta Sinha}",

note = "Funding Information: Gourav Bhattacharya, Shashi B. Srivastava and Sujit Deshmukh are indebted to Shiv Nadar University for providing scholarships. Kamatchi Jothiramalingam Sankaran and Paulius Pobedinskas are Postdoctoral Fellows of the Research Foundation-Flanders (FWO). The authors are also thankful for financial support from the Alexander von Humboldt Foundation for purchasing the contact angle measurement system and Mr. B. Ruttens, Ms. Hilde Pellaers and Prof. Jan D'Haen for technical and experimental assistance. The Hercules Foundation Flanders is acknowledged for financial support of the Raman equipment. Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2017",

month = aug,

day = "20",

doi = "10.1016/j.electacta.2017.06.030",

language = "English",

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Bhattacharya, G, Jothiramalingam Sankaran, K, Srivastava, SB, Thomas, JP, Deshmukh, S, Pobedinskas, P, Singh, SP, Leung, KT, Van Bael, MK, Haenen, K & Roy, SS 2017, 'Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method', Electrochimica Acta, vol. 246, pp. 68-74. https://doi.org/10.1016/j.electacta.2017.06.030

TY - JOUR

T1 - Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method

AU - Bhattacharya, Gourav

AU - Jothiramalingam Sankaran, Kamatchi

AU - Srivastava, Shashi B.

AU - Thomas, Joseph Palathinkal

AU - Deshmukh, Sujit

AU - Pobedinskas, Paulius

AU - Singh, Samarendra P.

AU - Leung, Kam Tong

AU - Van Bael, Marlies K.

AU - Haenen, Ken

AU - Roy, Susanta Sinha

N1 - Funding Information: Gourav Bhattacharya, Shashi B. Srivastava and Sujit Deshmukh are indebted to Shiv Nadar University for providing scholarships. Kamatchi Jothiramalingam Sankaran and Paulius Pobedinskas are Postdoctoral Fellows of the Research Foundation-Flanders (FWO). The authors are also thankful for financial support from the Alexander von Humboldt Foundation for purchasing the contact angle measurement system and Mr. B. Ruttens, Ms. Hilde Pellaers and Prof. Jan D'Haen for technical and experimental assistance. The Hercules Foundation Flanders is acknowledged for financial support of the Raman equipment. Publisher Copyright: © 2017 Elsevier Ltd

PY - 2017/8/20

Y1 - 2017/8/20

N2 - One-dimensional diamond nanorods (DNRs) were fabricated from nanocrystalline diamond films using a facile combination of microwave plasma enhanced chemical vapor deposition and reactive ion etching (RIE) techniques. Structural and electrochemical properties of undoped and nitrogen doped DNRs were thoroughly investigated. A cyclic voltammetry study revealed the increase in density of charge carriers when doped with nitrogen. Mott Schottky analysis was implemented for the quantitative determination of the flat band potential, effective density of charge carriers and energy band diagram, which revealed that the undoped sample exhibit p-type behavior, whereas the nitrogen doped sample showed n-type behavior. Defect related damage due to graphitization and hydrogen termination in the undoped DNRs (during RIE) was correlated with the p-type conductivity. Nitrogen doping induces n-type conductivity and enhances effective density of charge carriers.

AB - One-dimensional diamond nanorods (DNRs) were fabricated from nanocrystalline diamond films using a facile combination of microwave plasma enhanced chemical vapor deposition and reactive ion etching (RIE) techniques. Structural and electrochemical properties of undoped and nitrogen doped DNRs were thoroughly investigated. A cyclic voltammetry study revealed the increase in density of charge carriers when doped with nitrogen. Mott Schottky analysis was implemented for the quantitative determination of the flat band potential, effective density of charge carriers and energy band diagram, which revealed that the undoped sample exhibit p-type behavior, whereas the nitrogen doped sample showed n-type behavior. Defect related damage due to graphitization and hydrogen termination in the undoped DNRs (during RIE) was correlated with the p-type conductivity. Nitrogen doping induces n-type conductivity and enhances effective density of charge carriers.

KW - diamond nanorods

KW - mott schotkky analysis

KW - nitrogen doping

KW - reactive ion etching

UR - http://www.scopus.com/inward/record.url?scp=85020406707&partnerID=8YFLogxK

U2 - 10.1016/j.electacta.2017.06.030

DO - 10.1016/j.electacta.2017.06.030

M3 - Article

AN - SCOPUS:85020406707

SN - 0013-4686

VL - 246

SP - 68

EP - 74

JO - Electrochimica Acta

JF - Electrochimica Acta

ER -

Probing the flat band potential and effective electronic carrier density in vertically aligned nitrogen doped diamond nanorods via electrochemical method

Abstract

Bibliographical note

Keywords

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