Oxide ferroelectric thin film/nematic liquid crystal devices

W Whatmore, SS Roy, Q Zhang, SS Roy, HF Gleeson

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    The visualisation of domains in ferroelectrics by decoration of the surface with nematic liquid crystals (NLC) has been used previously for the study of single crystal ferroelectrics. Until recently there has, however, been no work reported on the coupling between NLC and the polarisation in ferroelectric thin films. Such a coupling would open the possibility of imparting switchable memory to nematic LC displays. This paper reviews work on the fabrication and testing of device structures with the structure: glass/ITO/PZT/LC/ITO/glass (PZT=240mn sol-gel PbZr0.3Ti0.7O3; ITO= sputtered transparent, conductive indium tin oxide). When a voltage pulse is applied to the sandwich via the ITO electrodes, the switched polarisation in the ferroelectric thin film is observed. It has been found that a thin layer of TiO2, deposited by sol-gel onto the ITO, can be highly beneficial in improving the control of PZT nucleation and grain size/structure, improving the uniformity and quality of the structures. It has also been found possible to measure the poling voltage required to obtain a reorientation in the nematic LC layer and to refer this back to the hysteresis loop obtained from the PZT. The potential of the structure for device applications is discussed.
    LanguageEnglish
    Pages1655-1668
    JournalIntegrated Ferroelectrics
    Volume41
    Issue number1-4
    Publication statusPublished - 2001

    Fingerprint

    ITO (semiconductors)
    liquid crystals
    oxides
    thin films
    gels
    glass
    electric potential
    polarization
    indium oxides
    tin oxides
    retraining
    grain size
    hysteresis
    nucleation
    fabrication
    electrodes
    single crystals
    pulses

    Cite this

    Whatmore, W., Roy, SS., Zhang, Q., Roy, SS., & Gleeson, HF. (2001). Oxide ferroelectric thin film/nematic liquid crystal devices. Integrated Ferroelectrics, 41(1-4), 1655-1668.
    Whatmore, W ; Roy, SS ; Zhang, Q ; Roy, SS ; Gleeson, HF. / Oxide ferroelectric thin film/nematic liquid crystal devices. In: Integrated Ferroelectrics. 2001 ; Vol. 41, No. 1-4. pp. 1655-1668.
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    abstract = "The visualisation of domains in ferroelectrics by decoration of the surface with nematic liquid crystals (NLC) has been used previously for the study of single crystal ferroelectrics. Until recently there has, however, been no work reported on the coupling between NLC and the polarisation in ferroelectric thin films. Such a coupling would open the possibility of imparting switchable memory to nematic LC displays. This paper reviews work on the fabrication and testing of device structures with the structure: glass/ITO/PZT/LC/ITO/glass (PZT=240mn sol-gel PbZr0.3Ti0.7O3; ITO= sputtered transparent, conductive indium tin oxide). When a voltage pulse is applied to the sandwich via the ITO electrodes, the switched polarisation in the ferroelectric thin film is observed. It has been found that a thin layer of TiO2, deposited by sol-gel onto the ITO, can be highly beneficial in improving the control of PZT nucleation and grain size/structure, improving the uniformity and quality of the structures. It has also been found possible to measure the poling voltage required to obtain a reorientation in the nematic LC layer and to refer this back to the hysteresis loop obtained from the PZT. The potential of the structure for device applications is discussed.",
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    Whatmore, W, Roy, SS, Zhang, Q, Roy, SS & Gleeson, HF 2001, 'Oxide ferroelectric thin film/nematic liquid crystal devices', Integrated Ferroelectrics, vol. 41, no. 1-4, pp. 1655-1668.

    Oxide ferroelectric thin film/nematic liquid crystal devices. / Whatmore, W; Roy, SS; Zhang, Q; Roy, SS; Gleeson, HF.

    In: Integrated Ferroelectrics, Vol. 41, No. 1-4, 2001, p. 1655-1668.

    Research output: Contribution to journalArticle

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    T1 - Oxide ferroelectric thin film/nematic liquid crystal devices

    AU - Whatmore, W

    AU - Roy, SS

    AU - Zhang, Q

    AU - Roy, SS

    AU - Gleeson, HF

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    N2 - The visualisation of domains in ferroelectrics by decoration of the surface with nematic liquid crystals (NLC) has been used previously for the study of single crystal ferroelectrics. Until recently there has, however, been no work reported on the coupling between NLC and the polarisation in ferroelectric thin films. Such a coupling would open the possibility of imparting switchable memory to nematic LC displays. This paper reviews work on the fabrication and testing of device structures with the structure: glass/ITO/PZT/LC/ITO/glass (PZT=240mn sol-gel PbZr0.3Ti0.7O3; ITO= sputtered transparent, conductive indium tin oxide). When a voltage pulse is applied to the sandwich via the ITO electrodes, the switched polarisation in the ferroelectric thin film is observed. It has been found that a thin layer of TiO2, deposited by sol-gel onto the ITO, can be highly beneficial in improving the control of PZT nucleation and grain size/structure, improving the uniformity and quality of the structures. It has also been found possible to measure the poling voltage required to obtain a reorientation in the nematic LC layer and to refer this back to the hysteresis loop obtained from the PZT. The potential of the structure for device applications is discussed.

    AB - The visualisation of domains in ferroelectrics by decoration of the surface with nematic liquid crystals (NLC) has been used previously for the study of single crystal ferroelectrics. Until recently there has, however, been no work reported on the coupling between NLC and the polarisation in ferroelectric thin films. Such a coupling would open the possibility of imparting switchable memory to nematic LC displays. This paper reviews work on the fabrication and testing of device structures with the structure: glass/ITO/PZT/LC/ITO/glass (PZT=240mn sol-gel PbZr0.3Ti0.7O3; ITO= sputtered transparent, conductive indium tin oxide). When a voltage pulse is applied to the sandwich via the ITO electrodes, the switched polarisation in the ferroelectric thin film is observed. It has been found that a thin layer of TiO2, deposited by sol-gel onto the ITO, can be highly beneficial in improving the control of PZT nucleation and grain size/structure, improving the uniformity and quality of the structures. It has also been found possible to measure the poling voltage required to obtain a reorientation in the nematic LC layer and to refer this back to the hysteresis loop obtained from the PZT. The potential of the structure for device applications is discussed.

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    Whatmore W, Roy SS, Zhang Q, Roy SS, Gleeson HF. Oxide ferroelectric thin film/nematic liquid crystal devices. Integrated Ferroelectrics. 2001;41(1-4):1655-1668.