Abstract
Ammonia sensing properties of pure and Al modified WO3 thin films prepared using RF sputtering have been investigated. Both the sensor films exhibited a maximum response at an operating temperature of 250°C. Modification with Al has been demonstrated to improve the response kinetics in particular the response time (6 min) in comparison to that of pure WO 3 (8 min) towards NH3 (100 ppm). Interestingly, both the sensor films showed an increase in resistance i.e., a p-type behavior upon exposure to NH3.
Original language | English |
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Title of host publication | Proceedings of the International Conference on "Advanced Nanomaterials and Emerging Engineering Technologies", ICANMEET 2013 |
Publisher | IEEE Xplore |
Pages | 560-562 |
Number of pages | 3 |
ISBN (Print) | 9781479913794 |
DOIs | |
Publication status | Published (in print/issue) - 30 Oct 2013 |
Event | 2013 International Conference on Advanced Nanomaterials and Emerging Engineering Technologies, ICANMEET 2013 - Chennai, India Duration: 24 Jul 2013 → 26 Jul 2013 |
Conference
Conference | 2013 International Conference on Advanced Nanomaterials and Emerging Engineering Technologies, ICANMEET 2013 |
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Country/Territory | India |
City | Chennai |
Period | 24/07/13 → 26/07/13 |
Keywords
- Al
- NH
- RF sputtering
- Sensor
- Thin Film
- WO