NEXAFS study and electrical properties of nitrogen-incorporated tetrahedral amorphous carbon films

R McCann, SS Roy, P Papakonstantinou, I Ahmad, PD Maguire, JAD McLaughlin, L Petaccia, S Lizzit, A Goldoni

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33 Citations (Scopus)

Abstract

Tetrahedral amorphous carbon nitride (ta-C:N) films obtained by filtered cathodic vacuum arc deposition have been investigated by Near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The C K (carbon K) edge NEXAFS spectra clearly revealed the increase of C=N bonds with the increase of nitrogen concentration. The C K edge NEXAFS analysis further showed that the content of the surface defect (mainly C-H bonds) decreased with the increase of nitrogen in the films. As the nitrogen concentration increased a pronounced change in the pi* features were observed at the N K (nitrogen K) edge. The origin of the N K edge pi* peaks are mainly due to the formation of C-N bonds and nitrogen substitution in the graphite network. Polarization dependent NEXAFS measurements showed an angular distribution of CN bonds. The electrical resistivity of the ta-C:N films decreased at higher nitrogen concentration and this may be from the development of graphite-like structures in these films. The electrical measurements were confirmed further with electrochemical measurements. (c) 2005 Elsevier B.V. All rights reserved.
Original languageEnglish
Pages (from-to)1057-1061
JournalDiamond and Related Materials
Volume14
Issue number3-7, S
DOIs
Publication statusPublished - Mar 2005

Keywords

  • carbon nitride
  • thin film
  • NEXAFS
  • electrical

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