Abstract
Tetrahedral amorphous carbon nitride (ta-C:N) films obtained by filtered cathodic vacuum arc deposition have been investigated by Near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The C K (carbon K) edge NEXAFS spectra clearly revealed the increase of C=N bonds with the increase of nitrogen concentration. The C K edge NEXAFS analysis further showed that the content of the surface defect (mainly C-H bonds) decreased with the increase of nitrogen in the films. As the nitrogen concentration increased a pronounced change in the pi* features were observed at the N K (nitrogen K) edge. The origin of the N K edge pi* peaks are mainly due to the formation of C-N bonds and nitrogen substitution in the graphite network. Polarization dependent NEXAFS measurements showed an angular distribution of CN bonds. The electrical resistivity of the ta-C:N films decreased at higher nitrogen concentration and this may be from the development of graphite-like structures in these films. The electrical measurements were confirmed further with electrochemical measurements. (c) 2005 Elsevier B.V. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 1057-1061 |
| Journal | Diamond and Related Materials |
| Volume | 14 |
| Issue number | 3-7, S |
| DOIs | |
| Publication status | Published (in print/issue) - Mar 2005 |
Bibliographical note
15th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides, and Silicon Carbide, Riva del Garda, ITALY, SEP12-17, 2004
Keywords
- carbon nitride
- thin film
- NEXAFS
- electrical