NEXAFS study and electrical properties of nitrogen-incorporated tetrahedral amorphous carbon films

R McCann, SS Roy, P Papakonstantinou, I Ahmad, PD Maguire, JAD McLaughlin, L Petaccia, S Lizzit, A Goldoni

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Abstract

Tetrahedral amorphous carbon nitride (ta-C:N) films obtained by filtered cathodic vacuum arc deposition have been investigated by Near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The C K (carbon K) edge NEXAFS spectra clearly revealed the increase of C=N bonds with the increase of nitrogen concentration. The C K edge NEXAFS analysis further showed that the content of the surface defect (mainly C-H bonds) decreased with the increase of nitrogen in the films. As the nitrogen concentration increased a pronounced change in the pi* features were observed at the N K (nitrogen K) edge. The origin of the N K edge pi* peaks are mainly due to the formation of C-N bonds and nitrogen substitution in the graphite network. Polarization dependent NEXAFS measurements showed an angular distribution of CN bonds. The electrical resistivity of the ta-C:N films decreased at higher nitrogen concentration and this may be from the development of graphite-like structures in these films. The electrical measurements were confirmed further with electrochemical measurements. (c) 2005 Elsevier B.V. All rights reserved.
LanguageEnglish
Pages1057-1061
JournalDiamond and Related Materials
Volume14
Issue number3-7, S
DOIs
Publication statusPublished - Mar 2005

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Carbon films
Amorphous carbon
X ray absorption
Amorphous films
Electric properties
Nitrogen
Graphite
Carbon nitride
X ray absorption near edge structure spectroscopy
Angular distribution
Surface defects
Substitution reactions
Carbon
Vacuum
Polarization

Keywords

  • carbon nitride
  • thin film
  • NEXAFS
  • electrical

Cite this

McCann, R ; Roy, SS ; Papakonstantinou, P ; Ahmad, I ; Maguire, PD ; McLaughlin, JAD ; Petaccia, L ; Lizzit, S ; Goldoni, A. / NEXAFS study and electrical properties of nitrogen-incorporated tetrahedral amorphous carbon films. In: Diamond and Related Materials. 2005 ; Vol. 14, No. 3-7, S. pp. 1057-1061.
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abstract = "Tetrahedral amorphous carbon nitride (ta-C:N) films obtained by filtered cathodic vacuum arc deposition have been investigated by Near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The C K (carbon K) edge NEXAFS spectra clearly revealed the increase of C=N bonds with the increase of nitrogen concentration. The C K edge NEXAFS analysis further showed that the content of the surface defect (mainly C-H bonds) decreased with the increase of nitrogen in the films. As the nitrogen concentration increased a pronounced change in the pi* features were observed at the N K (nitrogen K) edge. The origin of the N K edge pi* peaks are mainly due to the formation of C-N bonds and nitrogen substitution in the graphite network. Polarization dependent NEXAFS measurements showed an angular distribution of CN bonds. The electrical resistivity of the ta-C:N films decreased at higher nitrogen concentration and this may be from the development of graphite-like structures in these films. The electrical measurements were confirmed further with electrochemical measurements. (c) 2005 Elsevier B.V. All rights reserved.",
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NEXAFS study and electrical properties of nitrogen-incorporated tetrahedral amorphous carbon films. / McCann, R; Roy, SS; Papakonstantinou, P; Ahmad, I; Maguire, PD; McLaughlin, JAD; Petaccia, L; Lizzit, S; Goldoni, A.

In: Diamond and Related Materials, Vol. 14, No. 3-7, S, 03.2005, p. 1057-1061.

Research output: Contribution to journalArticle

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T1 - NEXAFS study and electrical properties of nitrogen-incorporated tetrahedral amorphous carbon films

AU - McCann, R

AU - Roy, SS

AU - Papakonstantinou, P

AU - Ahmad, I

AU - Maguire, PD

AU - McLaughlin, JAD

AU - Petaccia, L

AU - Lizzit, S

AU - Goldoni, A

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PY - 2005/3

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N2 - Tetrahedral amorphous carbon nitride (ta-C:N) films obtained by filtered cathodic vacuum arc deposition have been investigated by Near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The C K (carbon K) edge NEXAFS spectra clearly revealed the increase of C=N bonds with the increase of nitrogen concentration. The C K edge NEXAFS analysis further showed that the content of the surface defect (mainly C-H bonds) decreased with the increase of nitrogen in the films. As the nitrogen concentration increased a pronounced change in the pi* features were observed at the N K (nitrogen K) edge. The origin of the N K edge pi* peaks are mainly due to the formation of C-N bonds and nitrogen substitution in the graphite network. Polarization dependent NEXAFS measurements showed an angular distribution of CN bonds. The electrical resistivity of the ta-C:N films decreased at higher nitrogen concentration and this may be from the development of graphite-like structures in these films. The electrical measurements were confirmed further with electrochemical measurements. (c) 2005 Elsevier B.V. All rights reserved.

AB - Tetrahedral amorphous carbon nitride (ta-C:N) films obtained by filtered cathodic vacuum arc deposition have been investigated by Near edge X-ray absorption fine structure (NEXAFS) spectroscopy. The C K (carbon K) edge NEXAFS spectra clearly revealed the increase of C=N bonds with the increase of nitrogen concentration. The C K edge NEXAFS analysis further showed that the content of the surface defect (mainly C-H bonds) decreased with the increase of nitrogen in the films. As the nitrogen concentration increased a pronounced change in the pi* features were observed at the N K (nitrogen K) edge. The origin of the N K edge pi* peaks are mainly due to the formation of C-N bonds and nitrogen substitution in the graphite network. Polarization dependent NEXAFS measurements showed an angular distribution of CN bonds. The electrical resistivity of the ta-C:N films decreased at higher nitrogen concentration and this may be from the development of graphite-like structures in these films. The electrical measurements were confirmed further with electrochemical measurements. (c) 2005 Elsevier B.V. All rights reserved.

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