New SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation

Ke Lu; Philip Perry; Thomas J. Brazil

New SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation

Ke Lu
, Philip Perry
, Thomas J. Brazil

University College Dublin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Citations (Scopus)

Abstract

Accurate modelling of the microwave large-signal characteristics of Heterojunction Bipolar Transistors (HBTs) is extremely useful for microwave power applications of this device. This paper presents a new type of HBT large-signal model which is valid for DC, small-signal and large-signal AC modes of operation. The model may be used over a wide range of operating conditions and includes allowance for self-heating effects which are very important for HBTs. Through the use of several novel features, the model is differentiated from traditional Ebers-Moll or Gummel-Poon BJT representations. The new model is accompanied by a very simple parameter extraction process requiring only a series of conventional DC measurement and multi-bias point small-signal S-parameter measurements. The model is validated by independent power sweep measurements on HBTs from two different manufacturers.

Original language	English
Title of host publication	IEEE MTT-S International Microwave Symposium Digest
Publisher	Publ by IEEE
Pages	1579-1582
Number of pages	4
Volume	3
ISBN (Print)	0780317793
Publication status	Published (in print/issue) - 1 Jan 1994
Event	Proceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA Duration: 23 May 1994 → 27 May 1994

Conference

Conference	Proceedings of the IEEE MTT-S International Microwave Symposium
City	San Diego, CA, USA
Period	23/05/94 → 27/05/94

Cite this

@inproceedings{2665f6355cc144929eec02a8dd2b4729,

title = "New SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation",

abstract = "Accurate modelling of the microwave large-signal characteristics of Heterojunction Bipolar Transistors (HBTs) is extremely useful for microwave power applications of this device. This paper presents a new type of HBT large-signal model which is valid for DC, small-signal and large-signal AC modes of operation. The model may be used over a wide range of operating conditions and includes allowance for self-heating effects which are very important for HBTs. Through the use of several novel features, the model is differentiated from traditional Ebers-Moll or Gummel-Poon BJT representations. The new model is accompanied by a very simple parameter extraction process requiring only a series of conventional DC measurement and multi-bias point small-signal S-parameter measurements. The model is validated by independent power sweep measurements on HBTs from two different manufacturers.",

author = "Ke Lu and Philip Perry and Brazil, \{Thomas J.\}",

year = "1994",

month = jan,

day = "1",

language = "English",

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volume = "3",

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booktitle = "IEEE MTT-S International Microwave Symposium Digest",

publisher = "Publ by IEEE",

note = "Proceedings of the IEEE MTT-S International Microwave Symposium ; Conference date: 23-05-1994 Through 27-05-1994",

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TY - GEN

T1 - New SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation

AU - Lu, Ke

AU - Perry, Philip

AU - Brazil, Thomas J.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Accurate modelling of the microwave large-signal characteristics of Heterojunction Bipolar Transistors (HBTs) is extremely useful for microwave power applications of this device. This paper presents a new type of HBT large-signal model which is valid for DC, small-signal and large-signal AC modes of operation. The model may be used over a wide range of operating conditions and includes allowance for self-heating effects which are very important for HBTs. Through the use of several novel features, the model is differentiated from traditional Ebers-Moll or Gummel-Poon BJT representations. The new model is accompanied by a very simple parameter extraction process requiring only a series of conventional DC measurement and multi-bias point small-signal S-parameter measurements. The model is validated by independent power sweep measurements on HBTs from two different manufacturers.

AB - Accurate modelling of the microwave large-signal characteristics of Heterojunction Bipolar Transistors (HBTs) is extremely useful for microwave power applications of this device. This paper presents a new type of HBT large-signal model which is valid for DC, small-signal and large-signal AC modes of operation. The model may be used over a wide range of operating conditions and includes allowance for self-heating effects which are very important for HBTs. Through the use of several novel features, the model is differentiated from traditional Ebers-Moll or Gummel-Poon BJT representations. The new model is accompanied by a very simple parameter extraction process requiring only a series of conventional DC measurement and multi-bias point small-signal S-parameter measurements. The model is validated by independent power sweep measurements on HBTs from two different manufacturers.

UR - https://www.scopus.com/pages/publications/0028098579

M3 - Conference contribution

AN - SCOPUS:0028098579

SN - 0780317793

VL - 3

SP - 1579

EP - 1582

BT - IEEE MTT-S International Microwave Symposium Digest

PB - Publ by IEEE

T2 - Proceedings of the IEEE MTT-S International Microwave Symposium

Y2 - 23 May 1994 through 27 May 1994

ER -

New SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation

Abstract

Conference

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