New SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation

Ke Lu, Philip Perry, Thomas J. Brazil

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Accurate modelling of the microwave large-signal characteristics of Heterojunction Bipolar Transistors (HBTs) is extremely useful for microwave power applications of this device. This paper presents a new type of HBT large-signal model which is valid for DC, small-signal and large-signal AC modes of operation. The model may be used over a wide range of operating conditions and includes allowance for self-heating effects which are very important for HBTs. Through the use of several novel features, the model is differentiated from traditional Ebers-Moll or Gummel-Poon BJT representations. The new model is accompanied by a very simple parameter extraction process requiring only a series of conventional DC measurement and multi-bias point small-signal S-parameter measurements. The model is validated by independent power sweep measurements on HBTs from two different manufacturers.

Original languageEnglish
Title of host publicationIEEE MTT-S International Microwave Symposium Digest
PublisherPubl by IEEE
Pages1579-1582
Number of pages4
Volume3
ISBN (Print)0780317793
Publication statusPublished - 1 Jan 1994
EventProceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA
Duration: 23 May 199427 May 1994

Conference

ConferenceProceedings of the IEEE MTT-S International Microwave Symposium
CitySan Diego, CA, USA
Period23/05/9427/05/94

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    Lu, K., Perry, P., & Brazil, T. J. (1994). New SPICE-type heterojunction bipolar transistor model for DC, microwave small-signal and large-signal circuit simulation. In IEEE MTT-S International Microwave Symposium Digest (Vol. 3, pp. 1579-1582). Publ by IEEE.