Abstract
Accurate modelling of the microwave large-signal characteristics of Heterojunction Bipolar Transistors (HBTs) is extremely useful for microwave power applications of this device. This paper presents a new type of HBT large-signal model which is valid for DC, small-signal and large-signal AC modes of operation. The model may be used over a wide range of operating conditions and includes allowance for self-heating effects which are very important for HBTs. Through the use of several novel features, the model is differentiated from traditional Ebers-Moll or Gummel-Poon BJT representations. The new model is accompanied by a very simple parameter extraction process requiring only a series of conventional DC measurement and multi-bias point small-signal S-parameter measurements. The model is validated by independent power sweep measurements on HBTs from two different manufacturers.
| Original language | English |
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| Title of host publication | IEEE MTT-S International Microwave Symposium Digest |
| Publisher | Publ by IEEE |
| Pages | 1579-1582 |
| Number of pages | 4 |
| Volume | 3 |
| ISBN (Print) | 0780317793 |
| Publication status | Published (in print/issue) - 1 Jan 1994 |
| Event | Proceedings of the IEEE MTT-S International Microwave Symposium - San Diego, CA, USA Duration: 23 May 1994 → 27 May 1994 |
Conference
| Conference | Proceedings of the IEEE MTT-S International Microwave Symposium |
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| City | San Diego, CA, USA |
| Period | 23/05/94 → 27/05/94 |