Multiferroic iron oxide thin films at room temperature

Martí Gich; Ignasi Fina; Alessio Morelli; Florencio Sánchez; Marin Alexe; Jaume Gàzquez; Josep Fontcuberta; Anna Roig

doi:10.1002/adma.201400990

Multiferroic iron oxide thin films at room temperature

Martí Gich
, Ignasi Fina
, Alessio Morelli
, Florencio Sánchez
, Marin Alexe
, Jaume Gàzquez
, Josep Fontcuberta
, Anna Roig

Research output: Contribution to journal › Article › peer-review

194 Citations (Scopus)

Abstract

Multiferroic behaviour at room temperature is demonstrated in ε-Fe₂O₃. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe₂O₃ in novel devices.

Original language	English
Pages (from-to)	4645-4652
Number of pages	8
Journal	Advanced Materials
Volume	26
Issue number	27
Early online date	15 May 2014
DOIs	https://doi.org/10.1002/adma.201400990
Publication status	Published (in print/issue) - 16 Jul 2014

Keywords

ferrimagnets
ferroelectrics
iron oxides
mutiferroics
thin films

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10.1002/adma.201400990

Cite this

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abstract = "Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.",

keywords = "ferrimagnets, ferroelectrics, iron oxides, mutiferroics, thin films",

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AU - Gich, Martí

AU - Fina, Ignasi

AU - Morelli, Alessio

AU - Sánchez, Florencio

AU - Alexe, Marin

AU - Gàzquez, Jaume

AU - Fontcuberta, Josep

AU - Roig, Anna

PY - 2014/7/16

Y1 - 2014/7/16

N2 - Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.

AB - Multiferroic behaviour at room temperature is demonstrated in ε-Fe2O3. The simple composition of this new ferromagnetic ferroelectric oxide and the discovery of a robust path for its thin film growth by using suitable seed layers may boost the exploitation of ε-Fe2O3 in novel devices.

KW - ferrimagnets

KW - ferroelectrics

KW - iron oxides

KW - mutiferroics

KW - thin films

UR - https://www.scopus.com/pages/publications/84904514359

U2 - 10.1002/adma.201400990

DO - 10.1002/adma.201400990

M3 - Article

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VL - 26

SP - 4645

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Multiferroic iron oxide thin films at room temperature

Abstract

Keywords

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