Abstract
A microelectromechanical microwave switch manufactured by using a complementary metal oxide semiconductor (CMOS) post-process has been implemented. An equivalent circuit model is proposed to analyze the performance of the microwave switch. The components of the microwave switch consist of a coplanar waveguide (CPW), a suspended membrane and supported springs. The post-process requires only one wet etching to etch the sacrificial layer, and to release the suspended structures. Experimental results show that the switch has an insertion loss of -2 dB at 50 GHz and an isolation of -15 dB at 50 GHz. The driving voltage of the switch approximates to 19 V.
| Original language | English |
|---|---|
| Pages (from-to) | 519-524 |
| Number of pages | 6 |
| Journal | Microelectronics Journal |
| Volume | 38 |
| Issue number | 4-5 |
| DOIs | |
| Publication status | Published (in print/issue) - 1 Apr 2007 |
Funding
The authors would like to thank National Center for High-performance Computing (NCHC) for chip simulation, National Chip Implementation Center (CIC) for chip fabrication and the National Science Council of the Republic of China for financially supporting this research under Contract no. NSC 95-2221-E-005-043-MY2.
Keywords
- CMOS
- Micro actuator
- Microwave switch