Modeling and fabrication of a microelectromechanical microwave switch

Ching Liang Dai; Heng Ming Hsu; Ming Chang Tsai; Ming Ming Hsieh; Ming Wei Chang

doi:10.1016/j.mejo.2007.03.012

Modeling and fabrication of a microelectromechanical microwave switch

Ching Liang Dai, Heng Ming Hsu, Ming Chang Tsai, Ming Ming Hsieh, Ming Wei Chang

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

A microelectromechanical microwave switch manufactured by using a complementary metal oxide semiconductor (CMOS) post-process has been implemented. An equivalent circuit model is proposed to analyze the performance of the microwave switch. The components of the microwave switch consist of a coplanar waveguide (CPW), a suspended membrane and supported springs. The post-process requires only one wet etching to etch the sacrificial layer, and to release the suspended structures. Experimental results show that the switch has an insertion loss of -2 dB at 50 GHz and an isolation of -15 dB at 50 GHz. The driving voltage of the switch approximates to 19 V.

Original language	English
Pages (from-to)	519-524
Number of pages	6
Journal	Microelectronics Journal
Volume	38
Issue number	4-5
DOIs	https://doi.org/10.1016/j.mejo.2007.03.012
Publication status	Published (in print/issue) - 1 Apr 2007

Keywords

CMOS
Micro actuator
Microwave switch

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10.1016/j.mejo.2007.03.012

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title = "Modeling and fabrication of a microelectromechanical microwave switch",

abstract = "A microelectromechanical microwave switch manufactured by using a complementary metal oxide semiconductor (CMOS) post-process has been implemented. An equivalent circuit model is proposed to analyze the performance of the microwave switch. The components of the microwave switch consist of a coplanar waveguide (CPW), a suspended membrane and supported springs. The post-process requires only one wet etching to etch the sacrificial layer, and to release the suspended structures. Experimental results show that the switch has an insertion loss of -2 dB at 50 GHz and an isolation of -15 dB at 50 GHz. The driving voltage of the switch approximates to 19 V.",

keywords = "CMOS, Micro actuator, Microwave switch",

author = "Dai, {Ching Liang} and Hsu, {Heng Ming} and Tsai, {Ming Chang} and Hsieh, {Ming Ming} and Chang, {Ming Wei}",

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AU - Dai, Ching Liang

AU - Hsu, Heng Ming

AU - Tsai, Ming Chang

AU - Hsieh, Ming Ming

AU - Chang, Ming Wei

PY - 2007/4/1

Y1 - 2007/4/1

N2 - A microelectromechanical microwave switch manufactured by using a complementary metal oxide semiconductor (CMOS) post-process has been implemented. An equivalent circuit model is proposed to analyze the performance of the microwave switch. The components of the microwave switch consist of a coplanar waveguide (CPW), a suspended membrane and supported springs. The post-process requires only one wet etching to etch the sacrificial layer, and to release the suspended structures. Experimental results show that the switch has an insertion loss of -2 dB at 50 GHz and an isolation of -15 dB at 50 GHz. The driving voltage of the switch approximates to 19 V.

AB - A microelectromechanical microwave switch manufactured by using a complementary metal oxide semiconductor (CMOS) post-process has been implemented. An equivalent circuit model is proposed to analyze the performance of the microwave switch. The components of the microwave switch consist of a coplanar waveguide (CPW), a suspended membrane and supported springs. The post-process requires only one wet etching to etch the sacrificial layer, and to release the suspended structures. Experimental results show that the switch has an insertion loss of -2 dB at 50 GHz and an isolation of -15 dB at 50 GHz. The driving voltage of the switch approximates to 19 V.

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KW - Micro actuator

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Modeling and fabrication of a microelectromechanical microwave switch

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Keywords

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