Mechanical characterisation of nanocrystalline graphite using micromechanical structures

Sam Fishlock; David Grech; John McBride; Harold Chong; Suan Hui Pu

doi:10.1016/j.mee.2016.03.040

Mechanical characterisation of nanocrystalline graphite using micromechanical structures

Sam Fishlock, David Grech, John McBride, Harold Chong, Suan Hui Pu

Research output: Contribution to journal › Article › peer-review

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Abstract

Conductive nanocrystalline graphite has been deposited using plasma-enhanced chemical vapour deposition at 750 °C, directly onto silicon substrates without any catalyst and fabricated into micromechanical membrane and beam structures. Using the buckling profile of the membrane and beam structures, we measure a built-in strain of − 0.0142 and through wafer-bow measurement, a compressive stress of 436 MPa. From this we have calculated the Young's modulus of nanographite as 23.0 ± 2.7 GPa. This represents a scalable method for fabricating nanographite MEMS and NEMS devices via a microfabrication-compatible process and provides useful mechanical properties to enable design of future devices.

Original language	English
Article number	Volume 159
Pages (from-to)	184-189
Number of pages	6
Journal	Microelectronic Engineering
DOIs	https://doi.org/10.1016/j.mee.2016.03.040
Publication status	Published - 22 Mar 2016

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title = "Mechanical characterisation of nanocrystalline graphite using micromechanical structures",

abstract = "Conductive nanocrystalline graphite has been deposited using plasma-enhanced chemical vapour deposition at 750 °C, directly onto silicon substrates without any catalyst and fabricated into micromechanical membrane and beam structures. Using the buckling profile of the membrane and beam structures, we measure a built-in strain of − 0.0142 and through wafer-bow measurement, a compressive stress of 436 MPa. From this we have calculated the Young's modulus of nanographite as 23.0 ± 2.7 GPa. This represents a scalable method for fabricating nanographite MEMS and NEMS devices via a microfabrication-compatible process and provides useful mechanical properties to enable design of future devices.",

author = "Sam Fishlock and David Grech and John McBride and Harold Chong and {Hui Pu}, Suan",

note = "Evidence attached - uploaded to Southampton eprints repository before deadline",

year = "2016",

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doi = "10.1016/j.mee.2016.03.040",

language = "English",

pages = "184--189",

journal = "Microelectronic Engineering",

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T1 - Mechanical characterisation of nanocrystalline graphite using micromechanical structures

AU - Fishlock, Sam

AU - Grech, David

AU - McBride, John

AU - Chong, Harold

AU - Hui Pu, Suan

N1 - Evidence attached - uploaded to Southampton eprints repository before deadline

PY - 2016/3/22

Y1 - 2016/3/22

N2 - Conductive nanocrystalline graphite has been deposited using plasma-enhanced chemical vapour deposition at 750 °C, directly onto silicon substrates without any catalyst and fabricated into micromechanical membrane and beam structures. Using the buckling profile of the membrane and beam structures, we measure a built-in strain of − 0.0142 and through wafer-bow measurement, a compressive stress of 436 MPa. From this we have calculated the Young's modulus of nanographite as 23.0 ± 2.7 GPa. This represents a scalable method for fabricating nanographite MEMS and NEMS devices via a microfabrication-compatible process and provides useful mechanical properties to enable design of future devices.

AB - Conductive nanocrystalline graphite has been deposited using plasma-enhanced chemical vapour deposition at 750 °C, directly onto silicon substrates without any catalyst and fabricated into micromechanical membrane and beam structures. Using the buckling profile of the membrane and beam structures, we measure a built-in strain of − 0.0142 and through wafer-bow measurement, a compressive stress of 436 MPa. From this we have calculated the Young's modulus of nanographite as 23.0 ± 2.7 GPa. This represents a scalable method for fabricating nanographite MEMS and NEMS devices via a microfabrication-compatible process and provides useful mechanical properties to enable design of future devices.

U2 - 10.1016/j.mee.2016.03.040

DO - 10.1016/j.mee.2016.03.040

M3 - Article

SP - 184

EP - 189

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

M1 - Volume 159

ER -