Low-Loss and Tunable Localized Mid-Infrared Plasmons in Nanocrystals of Highly Degenerate InN

Sadegh Askari, Davide Mariotti, Jan Eric Stehr, Jan Benedikt, Julien Keraudy, Ulf Helmersson

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Plasmonic response of free charges confined in nanostructures of plasmonic materials is a powerful means for manipulating the light-material interaction at the nanoscale and hence has influence on various relevant technologies. In particular, plasmonic materials responsive in the mid-infrared range are technologically important as the mid-infrared is home to the vibrational resonance of molecules and also thermal radiation of hot objects. However, the development of the field is practically challenged with the lack of low-loss materials supporting high quality plasmons in this range of the spectrum. Here, we demonstrate that degenerately doped InN nanocrystals (NCs) support tunable and low-loss plasmon resonance spanning the entire midwave infrared range. Modulating free-carrier concentration is achieved by engineering nitrogen-vacancy defects (InN1–x, 0.017 <x <0.085) in highly degenerate NCs using a nonequilibrium gas-phase growth process. Despite the significant reduction in the carrier mobility relative to intrinsic InN, the mobility in degenerate InN NCs (>60 cm2/(V s)) remains considerably higher than the carrier mobility reported for other materials NCs such as doped metal oxides, chalcogenides, and noble metals. These findings demonstrate feasibility of controlled tuning of infrared plasmon resonances in a low-loss material of III–V compounds and open a gateway to further studies of these materials nanostructures for infrared plasmonic applications.
LanguageEnglish
Pages5681-5687
Number of pages7
JournalNano Letters
Volume18
Issue number9
Early online date23 Aug 2018
DOIs
Publication statusPublished - 12 Sep 2018

Fingerprint

Plasmons
plasmons
Nanocrystals
nanocrystals
Infrared radiation
chalcogenides
thermal radiation
carrier mobility
noble metals
metals
metal oxides
tuning
Nanostructures
engineering
nitrogen
defects
Chalcogenides
Carrier mobility
Heat radiation
Precious metals

Keywords

  • Indium nitride
  • low-loss
  • Nanocrystals
  • plasma
  • plasmonics

Cite this

Askari, Sadegh ; Mariotti, Davide ; Stehr, Jan Eric ; Benedikt, Jan ; Keraudy, Julien ; Helmersson, Ulf. / Low-Loss and Tunable Localized Mid-Infrared Plasmons in Nanocrystals of Highly Degenerate InN. In: Nano Letters. 2018 ; Vol. 18, No. 9. pp. 5681-5687.
@article{1d3275dce6ea45ef910eb473367b7951,
title = "Low-Loss and Tunable Localized Mid-Infrared Plasmons in Nanocrystals of Highly Degenerate InN",
abstract = "Plasmonic response of free charges confined in nanostructures of plasmonic materials is a powerful means for manipulating the light-material interaction at the nanoscale and hence has influence on various relevant technologies. In particular, plasmonic materials responsive in the mid-infrared range are technologically important as the mid-infrared is home to the vibrational resonance of molecules and also thermal radiation of hot objects. However, the development of the field is practically challenged with the lack of low-loss materials supporting high quality plasmons in this range of the spectrum. Here, we demonstrate that degenerately doped InN nanocrystals (NCs) support tunable and low-loss plasmon resonance spanning the entire midwave infrared range. Modulating free-carrier concentration is achieved by engineering nitrogen-vacancy defects (InN1–x, 0.017 60 cm2/(V s)) remains considerably higher than the carrier mobility reported for other materials NCs such as doped metal oxides, chalcogenides, and noble metals. These findings demonstrate feasibility of controlled tuning of infrared plasmon resonances in a low-loss material of III–V compounds and open a gateway to further studies of these materials nanostructures for infrared plasmonic applications.",
keywords = "Indium nitride, low-loss, Nanocrystals, plasma, plasmonics",
author = "Sadegh Askari and Davide Mariotti and Stehr, {Jan Eric} and Jan Benedikt and Julien Keraudy and Ulf Helmersson",
year = "2018",
month = "9",
day = "12",
doi = "10.1021/acs.nanolett.8b02260",
language = "English",
volume = "18",
pages = "5681--5687",
journal = "Nano Letters",
issn = "1530-6984",
number = "9",

}

Low-Loss and Tunable Localized Mid-Infrared Plasmons in Nanocrystals of Highly Degenerate InN. / Askari, Sadegh; Mariotti, Davide; Stehr, Jan Eric; Benedikt, Jan; Keraudy, Julien; Helmersson, Ulf.

In: Nano Letters, Vol. 18, No. 9, 12.09.2018, p. 5681-5687.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Low-Loss and Tunable Localized Mid-Infrared Plasmons in Nanocrystals of Highly Degenerate InN

AU - Askari, Sadegh

AU - Mariotti, Davide

AU - Stehr, Jan Eric

AU - Benedikt, Jan

AU - Keraudy, Julien

AU - Helmersson, Ulf

PY - 2018/9/12

Y1 - 2018/9/12

N2 - Plasmonic response of free charges confined in nanostructures of plasmonic materials is a powerful means for manipulating the light-material interaction at the nanoscale and hence has influence on various relevant technologies. In particular, plasmonic materials responsive in the mid-infrared range are technologically important as the mid-infrared is home to the vibrational resonance of molecules and also thermal radiation of hot objects. However, the development of the field is practically challenged with the lack of low-loss materials supporting high quality plasmons in this range of the spectrum. Here, we demonstrate that degenerately doped InN nanocrystals (NCs) support tunable and low-loss plasmon resonance spanning the entire midwave infrared range. Modulating free-carrier concentration is achieved by engineering nitrogen-vacancy defects (InN1–x, 0.017 60 cm2/(V s)) remains considerably higher than the carrier mobility reported for other materials NCs such as doped metal oxides, chalcogenides, and noble metals. These findings demonstrate feasibility of controlled tuning of infrared plasmon resonances in a low-loss material of III–V compounds and open a gateway to further studies of these materials nanostructures for infrared plasmonic applications.

AB - Plasmonic response of free charges confined in nanostructures of plasmonic materials is a powerful means for manipulating the light-material interaction at the nanoscale and hence has influence on various relevant technologies. In particular, plasmonic materials responsive in the mid-infrared range are technologically important as the mid-infrared is home to the vibrational resonance of molecules and also thermal radiation of hot objects. However, the development of the field is practically challenged with the lack of low-loss materials supporting high quality plasmons in this range of the spectrum. Here, we demonstrate that degenerately doped InN nanocrystals (NCs) support tunable and low-loss plasmon resonance spanning the entire midwave infrared range. Modulating free-carrier concentration is achieved by engineering nitrogen-vacancy defects (InN1–x, 0.017 60 cm2/(V s)) remains considerably higher than the carrier mobility reported for other materials NCs such as doped metal oxides, chalcogenides, and noble metals. These findings demonstrate feasibility of controlled tuning of infrared plasmon resonances in a low-loss material of III–V compounds and open a gateway to further studies of these materials nanostructures for infrared plasmonic applications.

KW - Indium nitride

KW - low-loss

KW - Nanocrystals

KW - plasma

KW - plasmonics

UR - https://pure.ulster.ac.uk/en/publications/low-loss-and-tunable-localized-mid-infrared-plasmons-in-nanocryst

U2 - 10.1021/acs.nanolett.8b02260

DO - 10.1021/acs.nanolett.8b02260

M3 - Article

VL - 18

SP - 5681

EP - 5687

JO - Nano Letters

T2 - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 9

ER -