Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

G Golan, E Rabinovich, A Inberg, A Axelevitch, G Lubarsky, P Rancoita, M Demarchi, A Seidman, N Croitoru

Research output: Contribution to journal › Article

3 Citations (Scopus)

Original language	English
Pages (from-to)	67
Journal	Microelectronics Reliability
Volume	41
Issue number	1
DOIs	https://doi.org/10.1016/S0026-2714(00)00212-2
Publication status	Published - 2001

Cite this

@article{13c361ec884144e89155994ac805e6bc,

title = "Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors",

author = "G Golan and E Rabinovich and A Inberg and A Axelevitch and G Lubarsky and P Rancoita and M Demarchi and A Seidman and N Croitoru",

year = "2001",

doi = "10.1016/S0026-2714(00)00212-2",

language = "English",

volume = "41",

pages = "67",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

AU - Golan, G

AU - Rabinovich, E

AU - Inberg, A

AU - Axelevitch, A

AU - Lubarsky, G

AU - Rancoita, P

AU - Demarchi, M

AU - Seidman, A

AU - Croitoru, N

PY - 2001

Y1 - 2001

U2 - 10.1016/S0026-2714(00)00212-2

DO - 10.1016/S0026-2714(00)00212-2

M3 - Article

VL - 41

SP - 67

JO - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 1

ER -