Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

G Golan, E Rabinovich, A Inberg, A Axelevitch, G Lubarsky, P Rancoita, M Demarchi, A Seidman, N Croitoru

Research output: Contribution to journal › Article

3 Citations (Scopus)

Language	English
Pages	67
Journal	Microelectronics Reliability
Volume	41
Issue number	1
DOIs	10.1016/S0026-2714(00)00212-2
Publication status	Published - 2001

Golan, G ; Rabinovich, E ; Inberg, A ; Axelevitch, A ; Lubarsky, G ; Rancoita, P ; Demarchi, M ; Seidman, A ; Croitoru, N. / Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. 2001 ; Vol. 41, No. 1. pp. 67.

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Vol. 41, No. 1, 2001, p. 67.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

AU - Golan, G

AU - Rabinovich, E

AU - Inberg, A

AU - Axelevitch, A

AU - Lubarsky, G

AU - Rancoita, P

AU - Demarchi, M

AU - Seidman, A

AU - Croitoru, N

PY - 2001

Y1 - 2001

U2 - 10.1016/S0026-2714(00)00212-2

DO - 10.1016/S0026-2714(00)00212-2

M3 - Article

VL - 41

SP - 67

IS - 1

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