Original language | English |
---|---|
Pages (from-to) | 67 |
Journal | Microelectronics Reliability |
Volume | 41 |
Issue number | 1 |
DOIs | |
Publication status | Published (in print/issue) - 2001 |
Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors
G Golan, E Rabinovich, A Inberg, A Axelevitch, G Lubarsky, P Rancoita, M Demarchi, A Seidman, N Croitoru
Research output: Contribution to journal › Article › peer-review
3
Citations
(Scopus)