Language | English |
---|---|
Pages | 67 |
Journal | Microelectronics Reliability |
Volume | 41 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2001 |
Cite this
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Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. / Golan, G; Rabinovich, E; Inberg, A; Axelevitch, A; Lubarsky, G; Rancoita, P; Demarchi, M; Seidman, A; Croitoru, N.
In: Microelectronics Reliability, Vol. 41, No. 1, 2001, p. 67.Research output: Contribution to journal › Article
TY - JOUR
T1 - Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors
AU - Golan, G
AU - Rabinovich, E
AU - Inberg, A
AU - Axelevitch, A
AU - Lubarsky, G
AU - Rancoita, P
AU - Demarchi, M
AU - Seidman, A
AU - Croitoru, N
PY - 2001
Y1 - 2001
U2 - 10.1016/S0026-2714(00)00212-2
DO - 10.1016/S0026-2714(00)00212-2
M3 - Article
VL - 41
SP - 67
JO - Microelectronics Reliability
T2 - Microelectronics Reliability
JF - Microelectronics Reliability
SN - 0026-2714
IS - 1
ER -