Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

G Golan, E Rabinovich, A Inberg, A Axelevitch, G Lubarsky, P Rancoita, M Demarchi, A Seidman, N Croitoru

Research output: Contribution to journal › Article

3 Citations (Scopus)
LanguageEnglish
Pages67
JournalMicroelectronics Reliability
Volume41
Issue number1
DOIs
Publication statusPublished - 2001

Cite this

Golan, G ; Rabinovich, E ; Inberg, A ; Axelevitch, A ; Lubarsky, G ; Rancoita, P ; Demarchi, M ; Seidman, A ; Croitoru, N. / Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. In: Microelectronics Reliability. 2001 ; Vol. 41, No. 1. pp. 67.
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title = "Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors",
author = "G Golan and E Rabinovich and A Inberg and A Axelevitch and G Lubarsky and P Rancoita and M Demarchi and A Seidman and N Croitoru",
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Golan, G, Rabinovich, E, Inberg, A, Axelevitch, A, Lubarsky, G, Rancoita, P, Demarchi, M, Seidman, A & Croitoru, N 2001, 'Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors', Microelectronics Reliability, vol. 41, no. 1, pp. 67. https://doi.org/10.1016/S0026-2714(00)00212-2

Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. / Golan, G; Rabinovich, E; Inberg, A; Axelevitch, A; Lubarsky, G; Rancoita, P; Demarchi, M; Seidman, A; Croitoru, N.

In: Microelectronics Reliability, Vol. 41, No. 1, 2001, p. 67.

Research output: Contribution to journal › Article

TY - JOUR

T1 - Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

AU - Golan, G

AU - Rabinovich, E

AU - Inberg, A

AU - Axelevitch, A

AU - Lubarsky, G

AU - Rancoita, P

AU - Demarchi, M

AU - Seidman, A

AU - Croitoru, N

PY - 2001

Y1 - 2001

U2 - 10.1016/S0026-2714(00)00212-2

DO - 10.1016/S0026-2714(00)00212-2

M3 - Article

VL - 41

SP - 67

JO - Microelectronics Reliability

T2 - Microelectronics Reliability

JF - Microelectronics Reliability

SN - 0026-2714

IS - 1

ER -

Golan G, Rabinovich E, Inberg A, Axelevitch A, Lubarsky G, Rancoita P et al. Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. Microelectronics Reliability. 2001;41(1):67. https://doi.org/10.1016/S0026-2714(00)00212-2

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