Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors

G Golan, E Rabinovich, A Inberg, A Axelevitch, G Lubarsky, P Rancoita, M Demarchi, A Seidman, N Croitoru

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)67
JournalMicroelectronics Reliability
Volume41
Issue number1
DOIs
Publication statusPublished - 2001

Cite this

Golan, G., Rabinovich, E., Inberg, A., Axelevitch, A., Lubarsky, G., Rancoita, P., Demarchi, M., Seidman, A., & Croitoru, N. (2001). Inversion phenomenon as a result of junction damages in neutron irradiated silicon detectors. Microelectronics Reliability, 41(1), 67. https://doi.org/10.1016/S0026-2714(00)00212-2