Abstract
High-resolution x-ray reflectivity (XRR) and heavy-ion elastic recoil detection were employed to study the role of hydrogen on the softening behavior observed in Si-incorporated hydrogenated amorphous carbon (Si-a-C:H) films synthesized by plasma-enhanced chemical-vapor deposition using tetramethylsilane (TMS) precursor in C2H2/Ar plasma. An enhancement of the optical band gap and a massive reduction in the density of the films prepared at high TMS flow rate were revealed, respectively, by spectroscopic ellipsometry and XRR analysis with the development of a double critical angle. A hydrogenation process was responsible for a rise in the density of voids and an associated reduction in the connectivity of the carbon network and the release of its residual stress. (c) 2005 American Institute of Physics.
Original language | English |
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Pages (from-to) | 103505 |
Journal | Journal of Applied Physics |
Volume | 98 |
Issue number | 10 |
DOIs | |
Publication status | Published (in print/issue) - Nov 2005 |