Hydrogen softening and optical transparency in Si-incorporated hydrogenated amorphous carbon films

GA Abbas, P Papakonstantinou, JAD McLaughlin, TDM Weijers-Dall, RG Elliman, J Filik

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

High-resolution x-ray reflectivity (XRR) and heavy-ion elastic recoil detection were employed to study the role of hydrogen on the softening behavior observed in Si-incorporated hydrogenated amorphous carbon (Si-a-C:H) films synthesized by plasma-enhanced chemical-vapor deposition using tetramethylsilane (TMS) precursor in C2H2/Ar plasma. An enhancement of the optical band gap and a massive reduction in the density of the films prepared at high TMS flow rate were revealed, respectively, by spectroscopic ellipsometry and XRR analysis with the development of a double critical angle. A hydrogenation process was responsible for a rise in the density of voids and an associated reduction in the connectivity of the carbon network and the release of its residual stress. (c) 2005 American Institute of Physics.
LanguageEnglish
Pages103505
JournalJournal of Applied Physics
Volume98
Issue number10
DOIs
Publication statusPublished - Nov 2005

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softening
reflectance
carbon
hydrogen
hydrogenation
ellipsometry
residual stress
voids
heavy ions
x rays
flow velocity
vapor deposition
physics
augmentation
high resolution

Cite this

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title = "Hydrogen softening and optical transparency in Si-incorporated hydrogenated amorphous carbon films",
abstract = "High-resolution x-ray reflectivity (XRR) and heavy-ion elastic recoil detection were employed to study the role of hydrogen on the softening behavior observed in Si-incorporated hydrogenated amorphous carbon (Si-a-C:H) films synthesized by plasma-enhanced chemical-vapor deposition using tetramethylsilane (TMS) precursor in C2H2/Ar plasma. An enhancement of the optical band gap and a massive reduction in the density of the films prepared at high TMS flow rate were revealed, respectively, by spectroscopic ellipsometry and XRR analysis with the development of a double critical angle. A hydrogenation process was responsible for a rise in the density of voids and an associated reduction in the connectivity of the carbon network and the release of its residual stress. (c) 2005 American Institute of Physics.",
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Hydrogen softening and optical transparency in Si-incorporated hydrogenated amorphous carbon films. / Abbas, GA; Papakonstantinou, P; McLaughlin, JAD; Weijers-Dall, TDM; Elliman, RG; Filik, J.

In: Journal of Applied Physics, Vol. 98, No. 10, 11.2005, p. 103505.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Hydrogen softening and optical transparency in Si-incorporated hydrogenated amorphous carbon films

AU - Abbas, GA

AU - Papakonstantinou, P

AU - McLaughlin, JAD

AU - Weijers-Dall, TDM

AU - Elliman, RG

AU - Filik, J

PY - 2005/11

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AB - High-resolution x-ray reflectivity (XRR) and heavy-ion elastic recoil detection were employed to study the role of hydrogen on the softening behavior observed in Si-incorporated hydrogenated amorphous carbon (Si-a-C:H) films synthesized by plasma-enhanced chemical-vapor deposition using tetramethylsilane (TMS) precursor in C2H2/Ar plasma. An enhancement of the optical band gap and a massive reduction in the density of the films prepared at high TMS flow rate were revealed, respectively, by spectroscopic ellipsometry and XRR analysis with the development of a double critical angle. A hydrogenation process was responsible for a rise in the density of voids and an associated reduction in the connectivity of the carbon network and the release of its residual stress. (c) 2005 American Institute of Physics.

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