High-resolution patterning of thin-film transparent conductors by dry etching

P. Maguire; S. Laverty; J. Shields; J. McLaughlin; J. Anderson

High-resolution patterning of thin-film transparent conductors by dry etching

P. Maguire, S. Laverty, J. Shields, J. McLaughlin, J. Anderson

Research output: Contribution to journal › Conference article › peer-review

Abstract

A plasma-based 'dry' process has been developed for the etching of tin oxide for high-resolution patterning. The process uses low concentration chlorine as the reactant gas with resultant etch rates of 42 nm/min. The minimum feature size is less than 5 μm. The process is highly planar with a uniform etch across a 13 × 10 cm substrate area. No polymer formation was observed.

Original language	English
Pages (from-to)	197-199
Number of pages	3
Journal	Proceedings of the SID
Volume	32
Issue number	3
Publication status	Published (in print/issue) - 1991
Event	Japan Display '89 - Kyoto, Jpn Duration: 1 Oct 1989 → 1 Oct 1989

Bibliographical note

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Copyright 2004 Elsevier B.V., All rights reserved.

Cite this

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title = "High-resolution patterning of thin-film transparent conductors by dry etching",

abstract = "A plasma-based 'dry' process has been developed for the etching of tin oxide for high-resolution patterning. The process uses low concentration chlorine as the reactant gas with resultant etch rates of 42 nm/min. The minimum feature size is less than 5 μm. The process is highly planar with a uniform etch across a 13 × 10 cm substrate area. No polymer formation was observed.",

author = "P. Maguire and S. Laverty and J. Shields and J. McLaughlin and J. Anderson",

year = "1991",

language = "English",

volume = "32",

pages = "197--199",

journal = "Proceedings of the SID",

issn = "0036-1496",

publisher = "National Symposium on Information Display",

number = "3",

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TY - JOUR

T1 - High-resolution patterning of thin-film transparent conductors by dry etching

AU - Maguire, P.

AU - Laverty, S.

AU - Shields, J.

AU - McLaughlin, J.

AU - Anderson, J.

PY - 1991

Y1 - 1991

N2 - A plasma-based 'dry' process has been developed for the etching of tin oxide for high-resolution patterning. The process uses low concentration chlorine as the reactant gas with resultant etch rates of 42 nm/min. The minimum feature size is less than 5 μm. The process is highly planar with a uniform etch across a 13 × 10 cm substrate area. No polymer formation was observed.

AB - A plasma-based 'dry' process has been developed for the etching of tin oxide for high-resolution patterning. The process uses low concentration chlorine as the reactant gas with resultant etch rates of 42 nm/min. The minimum feature size is less than 5 μm. The process is highly planar with a uniform etch across a 13 × 10 cm substrate area. No polymer formation was observed.

UR - https://www.scopus.com/pages/publications/0026373730

M3 - Conference article

AN - SCOPUS:0026373730

SN - 0036-1496

VL - 32

SP - 197

EP - 199

JO - Proceedings of the SID

JF - Proceedings of the SID

IS - 3

T2 - Japan Display '89

Y2 - 1 October 1989 through 1 October 1989

ER -

High-resolution patterning of thin-film transparent conductors by dry etching

Abstract

Bibliographical note

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