High-rate low-temperature growth of vertically aligned carbon nanotubes

NG Shang, YY Tan, V Stolojan, P Papakonstantinou, SRP Silva

Research output: Contribution to journalArticle

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Abstract

We report the low-temperature growth of vertically aligned carbon nanotubes (CNTs) at high growth rates by a photo-thermal chemical vapour deposition (PTCVD) technique using a Ti/Fe bilayer film as the catalyst. The bulk growth temperature of the substrate is as low as 370 °C and the growth rate is up to 1.3 µm min − 1, at least eight times faster than the values reported by traditional thermal CVD methods. Transmission electron microscopy observations reveal that as-grown CNTs are uniformly made of highly crystalline 5–6 graphene shells with an approximately 10 nm outer diameter and a 5–6 nm inner diameter. The low-temperature rapid growth of CNTs is strongly related to the unique top-down heating mode of PTCVD and the use of a Ti/Fe bimetallic solid solution catalyst. The present study will advance the development of CNTs as interconnects in nanoelectronics, through a CMOS-compatible low-temperature deposition method suitable for back-end-of-line processes.
LanguageEnglish
Pages505604
JournalNanotechnology
Volume21
DOIs
Publication statusPublished - 23 Nov 2010

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Carbon Nanotubes
Growth temperature
Carbon nanotubes
Chemical vapor deposition
Catalysts
Nanoelectronics
Graphite
Graphene
Solid solutions
Crystalline materials
Transmission electron microscopy
Heating
Temperature
Substrates
Hot Temperature

Cite this

Shang, NG ; Tan, YY ; Stolojan, V ; Papakonstantinou, P ; Silva, SRP. / High-rate low-temperature growth of vertically aligned carbon nanotubes. In: Nanotechnology. 2010 ; Vol. 21. pp. 505604.
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High-rate low-temperature growth of vertically aligned carbon nanotubes. / Shang, NG; Tan, YY; Stolojan, V; Papakonstantinou, P; Silva, SRP.

In: Nanotechnology, Vol. 21, 23.11.2010, p. 505604.

Research output: Contribution to journalArticle

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AB - We report the low-temperature growth of vertically aligned carbon nanotubes (CNTs) at high growth rates by a photo-thermal chemical vapour deposition (PTCVD) technique using a Ti/Fe bilayer film as the catalyst. The bulk growth temperature of the substrate is as low as 370 °C and the growth rate is up to 1.3 µm min − 1, at least eight times faster than the values reported by traditional thermal CVD methods. Transmission electron microscopy observations reveal that as-grown CNTs are uniformly made of highly crystalline 5–6 graphene shells with an approximately 10 nm outer diameter and a 5–6 nm inner diameter. The low-temperature rapid growth of CNTs is strongly related to the unique top-down heating mode of PTCVD and the use of a Ti/Fe bimetallic solid solution catalyst. The present study will advance the development of CNTs as interconnects in nanoelectronics, through a CMOS-compatible low-temperature deposition method suitable for back-end-of-line processes.

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