Hardness measurements at shallow depths on ultra-thin amorphous carbon films deposited onto silicon and Al2O3-TiC substrates

P Lemoine, JF Zhao, JP Quinn, JAD McLaughlin, PD Maguire

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

We carried out shallow depth indentations on ultra-thin hydrogenated amorphous carbon (a-C:H) films deposited by plasma enhanced chemical vapour deposition onto silicon and Al2O3-TiC ceramic substrates. These measurements are relevant to data storage and microelectronic applications, which require sub-50-nm, wear protective overcoats. Weused the continuous stiffness measurement technique to monitor the Young Modulus (E) and the hardness (H) as a function of depth for films with thickness varying from 10 to 50 nm. Raman spectroscopy and atomic force spectroscopy show that the films have similar roughness and microstructural bonding environment. For all films, the sub-30-nm region shows a continuous increase of E and H with depth, with no discernible tip calibration artifact. Above 30 nm depth, the effect of the film is predominant, essentially hardening noticeably the silicon and softening slightly the ceramic substrate, with E and H valuestypical of a-C:H materials. Above 50 nm, the E and H curves are dominated by the properties of the substrates. Initial nano-scratch experiments indicate that the films have better wear resistance than the Al2O3-TiC substrate. Therefore, the hardness and wear of the samples show no correlation at these shallow depths. (C) 2000 Elsevier Science B.V. All rights reserved.
LanguageEnglish
Pages166-172
JournalThin Solid Films
Volume379
Issue number1-2
DOIs
Publication statusPublished - Dec 2000

Fingerprint

Carbon films
Amorphous carbon
Silicon
Amorphous films
hardness
Hardness
carbon
silicon
Substrates
Wear of materials
ceramics
data storage
Plasma enhanced chemical vapor deposition
wear resistance
indentation
Indentation
microelectronics
Microelectronics
hardening
softening

Keywords

  • carbon
  • hardness
  • tribology
  • interfaces

Cite this

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title = "Hardness measurements at shallow depths on ultra-thin amorphous carbon films deposited onto silicon and Al2O3-TiC substrates",
abstract = "We carried out shallow depth indentations on ultra-thin hydrogenated amorphous carbon (a-C:H) films deposited by plasma enhanced chemical vapour deposition onto silicon and Al2O3-TiC ceramic substrates. These measurements are relevant to data storage and microelectronic applications, which require sub-50-nm, wear protective overcoats. Weused the continuous stiffness measurement technique to monitor the Young Modulus (E) and the hardness (H) as a function of depth for films with thickness varying from 10 to 50 nm. Raman spectroscopy and atomic force spectroscopy show that the films have similar roughness and microstructural bonding environment. For all films, the sub-30-nm region shows a continuous increase of E and H with depth, with no discernible tip calibration artifact. Above 30 nm depth, the effect of the film is predominant, essentially hardening noticeably the silicon and softening slightly the ceramic substrate, with E and H valuestypical of a-C:H materials. Above 50 nm, the E and H curves are dominated by the properties of the substrates. Initial nano-scratch experiments indicate that the films have better wear resistance than the Al2O3-TiC substrate. Therefore, the hardness and wear of the samples show no correlation at these shallow depths. (C) 2000 Elsevier Science B.V. All rights reserved.",
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Hardness measurements at shallow depths on ultra-thin amorphous carbon films deposited onto silicon and Al2O3-TiC substrates. / Lemoine, P; Zhao, JF; Quinn, JP; McLaughlin, JAD; Maguire, PD.

In: Thin Solid Films, Vol. 379, No. 1-2, 12.2000, p. 166-172.

Research output: Contribution to journalArticle

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AB - We carried out shallow depth indentations on ultra-thin hydrogenated amorphous carbon (a-C:H) films deposited by plasma enhanced chemical vapour deposition onto silicon and Al2O3-TiC ceramic substrates. These measurements are relevant to data storage and microelectronic applications, which require sub-50-nm, wear protective overcoats. Weused the continuous stiffness measurement technique to monitor the Young Modulus (E) and the hardness (H) as a function of depth for films with thickness varying from 10 to 50 nm. Raman spectroscopy and atomic force spectroscopy show that the films have similar roughness and microstructural bonding environment. For all films, the sub-30-nm region shows a continuous increase of E and H with depth, with no discernible tip calibration artifact. Above 30 nm depth, the effect of the film is predominant, essentially hardening noticeably the silicon and softening slightly the ceramic substrate, with E and H valuestypical of a-C:H materials. Above 50 nm, the E and H curves are dominated by the properties of the substrates. Initial nano-scratch experiments indicate that the films have better wear resistance than the Al2O3-TiC substrate. Therefore, the hardness and wear of the samples show no correlation at these shallow depths. (C) 2000 Elsevier Science B.V. All rights reserved.

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