Growth and characterisation of lead zirconate titanate (30/70) thin films using TiO2 seeding for oxide ferroelectric-liquid crystal display application

CP Shaw, SS Roy, RW Whatmore, H Gleeson, Z Huang, Q Zhang, S Dunn

    Research output: Contribution to journalArticle

    4 Citations (Scopus)

    Abstract

    The growth and characterisation of lead zirconate titanate (PZT) (30/70) thin films on indium tin oxide (ITO) coated glass, synthesised using a sol-gel/spin coating processing route, have been investigated using X-ray diffraction (XRD), transmitted electron microscopy (TEM) and atomic force microscopy (AFM). Perovskite crystallised in a random orientation, and all unseeded films showed characteristically large (similar to5-10 mum diameter) rosette formations. Studies involving the use of a thin seeding layer of titanium (IV) oxide on the ITO surface, have shown promising results in increasing the seeding density of the perovskite without sacrificing the film's electrical properties. Incorporation of a TiO2 seeded PZT film into a small hybrid liquid crystal display has been done, and bulk alignment of the liquid crystal adjacent to poled regions of the PZT layer has been demonstrated which remained after the poling voltages were removed.
    LanguageEnglish
    Pages159+
    JournalFerroelectrics
    Volume256
    Publication statusPublished - 2001

    Fingerprint

    inoculation
    liquid crystals
    indium oxides
    tin oxides
    oxides
    thin films
    coating
    electron microscopy
    titanium
    electrical properties
    alignment
    routes
    atomic force microscopy
    gels
    glass
    electric potential
    diffraction
    x rays

    Cite this

    Shaw, CP ; Roy, SS ; Whatmore, RW ; Gleeson, H ; Huang, Z ; Zhang, Q ; Dunn, S. / Growth and characterisation of lead zirconate titanate (30/70) thin films using TiO2 seeding for oxide ferroelectric-liquid crystal display application. In: Ferroelectrics. 2001 ; Vol. 256. pp. 159+.
    @article{46d7dab0dd7441ad8a9865e18a13a39c,
    title = "Growth and characterisation of lead zirconate titanate (30/70) thin films using TiO2 seeding for oxide ferroelectric-liquid crystal display application",
    abstract = "The growth and characterisation of lead zirconate titanate (PZT) (30/70) thin films on indium tin oxide (ITO) coated glass, synthesised using a sol-gel/spin coating processing route, have been investigated using X-ray diffraction (XRD), transmitted electron microscopy (TEM) and atomic force microscopy (AFM). Perovskite crystallised in a random orientation, and all unseeded films showed characteristically large (similar to5-10 mum diameter) rosette formations. Studies involving the use of a thin seeding layer of titanium (IV) oxide on the ITO surface, have shown promising results in increasing the seeding density of the perovskite without sacrificing the film's electrical properties. Incorporation of a TiO2 seeded PZT film into a small hybrid liquid crystal display has been done, and bulk alignment of the liquid crystal adjacent to poled regions of the PZT layer has been demonstrated which remained after the poling voltages were removed.",
    author = "CP Shaw and SS Roy and RW Whatmore and H Gleeson and Z Huang and Q Zhang and S Dunn",
    year = "2001",
    language = "English",
    volume = "256",
    pages = "159+",
    journal = "Ferroelectrics",
    issn = "0015-0193",

    }

    Growth and characterisation of lead zirconate titanate (30/70) thin films using TiO2 seeding for oxide ferroelectric-liquid crystal display application. / Shaw, CP; Roy, SS; Whatmore, RW; Gleeson, H; Huang, Z; Zhang, Q; Dunn, S.

    In: Ferroelectrics, Vol. 256, 2001, p. 159+.

    Research output: Contribution to journalArticle

    TY - JOUR

    T1 - Growth and characterisation of lead zirconate titanate (30/70) thin films using TiO2 seeding for oxide ferroelectric-liquid crystal display application

    AU - Shaw, CP

    AU - Roy, SS

    AU - Whatmore, RW

    AU - Gleeson, H

    AU - Huang, Z

    AU - Zhang, Q

    AU - Dunn, S

    PY - 2001

    Y1 - 2001

    N2 - The growth and characterisation of lead zirconate titanate (PZT) (30/70) thin films on indium tin oxide (ITO) coated glass, synthesised using a sol-gel/spin coating processing route, have been investigated using X-ray diffraction (XRD), transmitted electron microscopy (TEM) and atomic force microscopy (AFM). Perovskite crystallised in a random orientation, and all unseeded films showed characteristically large (similar to5-10 mum diameter) rosette formations. Studies involving the use of a thin seeding layer of titanium (IV) oxide on the ITO surface, have shown promising results in increasing the seeding density of the perovskite without sacrificing the film's electrical properties. Incorporation of a TiO2 seeded PZT film into a small hybrid liquid crystal display has been done, and bulk alignment of the liquid crystal adjacent to poled regions of the PZT layer has been demonstrated which remained after the poling voltages were removed.

    AB - The growth and characterisation of lead zirconate titanate (PZT) (30/70) thin films on indium tin oxide (ITO) coated glass, synthesised using a sol-gel/spin coating processing route, have been investigated using X-ray diffraction (XRD), transmitted electron microscopy (TEM) and atomic force microscopy (AFM). Perovskite crystallised in a random orientation, and all unseeded films showed characteristically large (similar to5-10 mum diameter) rosette formations. Studies involving the use of a thin seeding layer of titanium (IV) oxide on the ITO surface, have shown promising results in increasing the seeding density of the perovskite without sacrificing the film's electrical properties. Incorporation of a TiO2 seeded PZT film into a small hybrid liquid crystal display has been done, and bulk alignment of the liquid crystal adjacent to poled regions of the PZT layer has been demonstrated which remained after the poling voltages were removed.

    M3 - Article

    VL - 256

    SP - 159+

    JO - Ferroelectrics

    T2 - Ferroelectrics

    JF - Ferroelectrics

    SN - 0015-0193

    ER -