Abstract
We studied a suitable route to fabricate ferroelectric islands by focused-ion-beam milling in bismuth ferrite epitaxial thin films. Piezoresponse force microscopy shows that the damage induced by the milling process is extended to 1νm away from the edge of the focused-ion-beam patterned islands. After a combined vacuum and oxygen atmosphere annealing procedure, ferroelectricity is fully recovered in structures with sizes down to 500nm, while for 250nm islands the defects at the interfaces induce polarization direction pinning.
Original language | English |
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Article number | 265303 |
Journal | Nanotechnology |
Volume | 22 |
Issue number | 26 |
DOIs | |
Publication status | Published (in print/issue) - 1 Jul 2011 |