Fabrication of a micromachined tunable capacitor using the complementary metal-oxide-semiconductor post-process of etching metal layers

Ching Liang Dai, Heng Ming Hsu, Mao Chen Liu, Mao Kuo Wei, Ming Wei Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, we investigate the fabrication of a micromechanical tunable capacitor using the commercial complementary metal-oxide-semiconductor (CMOS) process and the post-process of maskless wet etching metal layers. The post-process has merits of easy execution and low cost. The post-process uses two etchants to etch the metal layers to release the suspended structures of the tunable capacitor. The comb-drive actuator is employed to change the position of the movable plate in the parallel capacitor, such that the overlap area between the two plates in the parallel capacitor is changed. The experimental results show a capacitance of 3.5 pF and a tuning range of 3.5:1 at 20 V.

LanguageEnglish
Pages1018-1020
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number2 A
DOIs
Publication statusPublished - 8 Feb 2006

Fingerprint

Etching
CMOS
capacitors
Capacitors
etching
Fabrication
fabrication
Metals
metals
etchants
Wet etching
Capacitance
Actuators
Tuning
actuators
capacitance
tuning
costs
Oxide semiconductors
Costs

Keywords

  • CMOS
  • Comb-drive actuator
  • Post-process
  • Tunable capacitor

Cite this

@article{df3e5f0ef042405e8e6b78c18444d476,
title = "Fabrication of a micromachined tunable capacitor using the complementary metal-oxide-semiconductor post-process of etching metal layers",
abstract = "In this study, we investigate the fabrication of a micromechanical tunable capacitor using the commercial complementary metal-oxide-semiconductor (CMOS) process and the post-process of maskless wet etching metal layers. The post-process has merits of easy execution and low cost. The post-process uses two etchants to etch the metal layers to release the suspended structures of the tunable capacitor. The comb-drive actuator is employed to change the position of the movable plate in the parallel capacitor, such that the overlap area between the two plates in the parallel capacitor is changed. The experimental results show a capacitance of 3.5 pF and a tuning range of 3.5:1 at 20 V.",
keywords = "CMOS, Comb-drive actuator, Post-process, Tunable capacitor",
author = "Dai, {Ching Liang} and Hsu, {Heng Ming} and Liu, {Mao Chen} and Wei, {Mao Kuo} and Chang, {Ming Wei}",
year = "2006",
month = "2",
day = "8",
doi = "10.1143/JJAP.45.1018",
language = "English",
volume = "45",
pages = "1018--1020",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "2 A",

}

Fabrication of a micromachined tunable capacitor using the complementary metal-oxide-semiconductor post-process of etching metal layers. / Dai, Ching Liang; Hsu, Heng Ming; Liu, Mao Chen; Wei, Mao Kuo; Chang, Ming Wei.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 2 A, 08.02.2006, p. 1018-1020.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication of a micromachined tunable capacitor using the complementary metal-oxide-semiconductor post-process of etching metal layers

AU - Dai, Ching Liang

AU - Hsu, Heng Ming

AU - Liu, Mao Chen

AU - Wei, Mao Kuo

AU - Chang, Ming Wei

PY - 2006/2/8

Y1 - 2006/2/8

N2 - In this study, we investigate the fabrication of a micromechanical tunable capacitor using the commercial complementary metal-oxide-semiconductor (CMOS) process and the post-process of maskless wet etching metal layers. The post-process has merits of easy execution and low cost. The post-process uses two etchants to etch the metal layers to release the suspended structures of the tunable capacitor. The comb-drive actuator is employed to change the position of the movable plate in the parallel capacitor, such that the overlap area between the two plates in the parallel capacitor is changed. The experimental results show a capacitance of 3.5 pF and a tuning range of 3.5:1 at 20 V.

AB - In this study, we investigate the fabrication of a micromechanical tunable capacitor using the commercial complementary metal-oxide-semiconductor (CMOS) process and the post-process of maskless wet etching metal layers. The post-process has merits of easy execution and low cost. The post-process uses two etchants to etch the metal layers to release the suspended structures of the tunable capacitor. The comb-drive actuator is employed to change the position of the movable plate in the parallel capacitor, such that the overlap area between the two plates in the parallel capacitor is changed. The experimental results show a capacitance of 3.5 pF and a tuning range of 3.5:1 at 20 V.

KW - CMOS

KW - Comb-drive actuator

KW - Post-process

KW - Tunable capacitor

UR - http://www.scopus.com/inward/record.url?scp=32344445131&partnerID=8YFLogxK

U2 - 10.1143/JJAP.45.1018

DO - 10.1143/JJAP.45.1018

M3 - Article

VL - 45

SP - 1018

EP - 1020

JO - Japanese Journal of Applied Physics

T2 - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 2 A

ER -