Fabrication and characterization of a microelectromechanical tunable capacitor

Ching Liang Dai; Shih Chieh Lin; Ming Wei Chang

doi:10.1016/j.mejo.2007.09.026

Fabrication and characterization of a microelectromechanical tunable capacitor

Ching Liang Dai
, Shih Chieh Lin
, Ming Wei Chang

National Chung Hsing University

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

A micromechanical tunable capacitor fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-process has been investigated in this study. The structure of the tunable capacitor consists of a membrane, supported beams, driving and sensing electrodes. The membrane is sustained by the supported beams. The tunable capacitor requires only one wet etching post-process to release the suspended structures. The post-process has the advantages of easy execution and low cost. The tunable capacitor contains a driving part and a sensing part. The sensing part generates a change in capacitance when applying a driving voltage to the driving part. Experimental results show that the tunable capacitor has a capacitance of 1.38 pF, a tuning range of 85% and a Q-factor of 40 at 100 MHz.

Original language	English
Pages (from-to)	1257-1262
Number of pages	6
Journal	Microelectronics Journal
Volume	38
Issue number	12
DOIs	https://doi.org/10.1016/j.mejo.2007.09.026
Publication status	Published (in print/issue) - 1 Dec 2007

Funding

The authors would like to thank National Center for High-Performance Computing (NCHC) for chip simulation, National Chip Implementation Center (CIC) for chip fabrication and the National Science Council of the Republic of China for financially supporting this research under contract no. NSC 95-2221-E-005-043-MY2.

Keywords

CMOS
Microactuator
Micromechanical tunable capacitor

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10.1016/j.mejo.2007.09.026

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title = "Fabrication and characterization of a microelectromechanical tunable capacitor",

abstract = "A micromechanical tunable capacitor fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-process has been investigated in this study. The structure of the tunable capacitor consists of a membrane, supported beams, driving and sensing electrodes. The membrane is sustained by the supported beams. The tunable capacitor requires only one wet etching post-process to release the suspended structures. The post-process has the advantages of easy execution and low cost. The tunable capacitor contains a driving part and a sensing part. The sensing part generates a change in capacitance when applying a driving voltage to the driving part. Experimental results show that the tunable capacitor has a capacitance of 1.38 pF, a tuning range of 85\% and a Q-factor of 40 at 100 MHz.",

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AU - Dai, Ching Liang

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AU - Chang, Ming Wei

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N2 - A micromechanical tunable capacitor fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-process has been investigated in this study. The structure of the tunable capacitor consists of a membrane, supported beams, driving and sensing electrodes. The membrane is sustained by the supported beams. The tunable capacitor requires only one wet etching post-process to release the suspended structures. The post-process has the advantages of easy execution and low cost. The tunable capacitor contains a driving part and a sensing part. The sensing part generates a change in capacitance when applying a driving voltage to the driving part. Experimental results show that the tunable capacitor has a capacitance of 1.38 pF, a tuning range of 85% and a Q-factor of 40 at 100 MHz.

AB - A micromechanical tunable capacitor fabricated using the commercial 0.35 μm complementary metal oxide semiconductor (CMOS) process and the post-process has been investigated in this study. The structure of the tunable capacitor consists of a membrane, supported beams, driving and sensing electrodes. The membrane is sustained by the supported beams. The tunable capacitor requires only one wet etching post-process to release the suspended structures. The post-process has the advantages of easy execution and low cost. The tunable capacitor contains a driving part and a sensing part. The sensing part generates a change in capacitance when applying a driving voltage to the driving part. Experimental results show that the tunable capacitor has a capacitance of 1.38 pF, a tuning range of 85% and a Q-factor of 40 at 100 MHz.

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Fabrication and characterization of a microelectromechanical tunable capacitor

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