Epitaxial strain stabilization of a ferroelectric phase in PbZrO 3 thin films

Ayan Roy Chaudhuri, Miryam Arredondo, Angelika Hähnel, Alessio Morelli, Michael Becker, Marin Alexe, Ionela Vrejoiu

Research output: Contribution to journalArticle

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Abstract

PbZrO3/SrRuO3/SrTiO3 (100) epitaxial heterostructures with different thickness of the PbZrO3 (PZO) layer (dPZO∼5-160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (dPZO≤10 nm) were found to possess a rhombohedral structure. On increasing the PZO film thickness, a bulk like orthorhombic phase started forming in the film with dPZO∼22 nm and became abundant in the thicker films. Nanobeam electron diffraction and room-temperature micro-Raman measurements revealed that the stabilization of the rhombohedral phase of PZO could be attributed to the epitaxial strain accommodated by the heterostructures. Room-temperature polarization vs electric field measurements performed on different samples showed characteristic double hysteresis loops of antiferroelectric materials accompanied by a small remnant polarization for the thick PZO films (dPZO50 nm). The remnant polarization increased by reducing the PZO layer thickness, and a ferroelectric like hysteresis loop was observed for the sample with dPZO∼22 nm. Local ferroelectric properties measured by piezoresponse force microscopy also exhibited a similar thickness-dependent antiferroelectric-ferroelectric transition. Room-temperature electrical properties observed in the PZO thin films in correlation to their structural characteristics suggested that a ferroelectric rhombohedral phase could be stabilized in thin epitaxial PZO films experiencing large interfacial compressive stress.

LanguageEnglish
Article number054112
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume84
Issue number5
DOIs
Publication statusPublished - 12 Aug 2011

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Ferroelectric materials
Stabilization
stabilization
Thin films
thick films
room temperature
polarization
Polarization
Hysteresis loops
thin films
hysteresis
Thick films
Antiferroelectric materials
Heterojunctions
Electric field measurement
pulsed laser deposition
Ultrathin films
Epitaxial films
film thickness
Pulsed laser deposition

Cite this

Roy Chaudhuri, Ayan ; Arredondo, Miryam ; Hähnel, Angelika ; Morelli, Alessio ; Becker, Michael ; Alexe, Marin ; Vrejoiu, Ionela. / Epitaxial strain stabilization of a ferroelectric phase in PbZrO 3 thin films. In: Physical Review B - Condensed Matter and Materials Physics. 2011 ; Vol. 84, No. 5.
@article{b6c4fb00e1f94aee82b823f5159e0830,
title = "Epitaxial strain stabilization of a ferroelectric phase in PbZrO 3 thin films",
abstract = "PbZrO3/SrRuO3/SrTiO3 (100) epitaxial heterostructures with different thickness of the PbZrO3 (PZO) layer (dPZO∼5-160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (dPZO≤10 nm) were found to possess a rhombohedral structure. On increasing the PZO film thickness, a bulk like orthorhombic phase started forming in the film with dPZO∼22 nm and became abundant in the thicker films. Nanobeam electron diffraction and room-temperature micro-Raman measurements revealed that the stabilization of the rhombohedral phase of PZO could be attributed to the epitaxial strain accommodated by the heterostructures. Room-temperature polarization vs electric field measurements performed on different samples showed characteristic double hysteresis loops of antiferroelectric materials accompanied by a small remnant polarization for the thick PZO films (dPZO50 nm). The remnant polarization increased by reducing the PZO layer thickness, and a ferroelectric like hysteresis loop was observed for the sample with dPZO∼22 nm. Local ferroelectric properties measured by piezoresponse force microscopy also exhibited a similar thickness-dependent antiferroelectric-ferroelectric transition. Room-temperature electrical properties observed in the PZO thin films in correlation to their structural characteristics suggested that a ferroelectric rhombohedral phase could be stabilized in thin epitaxial PZO films experiencing large interfacial compressive stress.",
author = "{Roy Chaudhuri}, Ayan and Miryam Arredondo and Angelika H{\"a}hnel and Alessio Morelli and Michael Becker and Marin Alexe and Ionela Vrejoiu",
year = "2011",
month = "8",
day = "12",
doi = "10.1103/PhysRevB.84.054112",
language = "English",
volume = "84",
journal = "Physical Review B: Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "APS Physics",
number = "5",

}

Epitaxial strain stabilization of a ferroelectric phase in PbZrO 3 thin films. / Roy Chaudhuri, Ayan; Arredondo, Miryam; Hähnel, Angelika; Morelli, Alessio; Becker, Michael; Alexe, Marin; Vrejoiu, Ionela.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 84, No. 5, 054112, 12.08.2011.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Epitaxial strain stabilization of a ferroelectric phase in PbZrO 3 thin films

AU - Roy Chaudhuri, Ayan

AU - Arredondo, Miryam

AU - Hähnel, Angelika

AU - Morelli, Alessio

AU - Becker, Michael

AU - Alexe, Marin

AU - Vrejoiu, Ionela

PY - 2011/8/12

Y1 - 2011/8/12

N2 - PbZrO3/SrRuO3/SrTiO3 (100) epitaxial heterostructures with different thickness of the PbZrO3 (PZO) layer (dPZO∼5-160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (dPZO≤10 nm) were found to possess a rhombohedral structure. On increasing the PZO film thickness, a bulk like orthorhombic phase started forming in the film with dPZO∼22 nm and became abundant in the thicker films. Nanobeam electron diffraction and room-temperature micro-Raman measurements revealed that the stabilization of the rhombohedral phase of PZO could be attributed to the epitaxial strain accommodated by the heterostructures. Room-temperature polarization vs electric field measurements performed on different samples showed characteristic double hysteresis loops of antiferroelectric materials accompanied by a small remnant polarization for the thick PZO films (dPZO50 nm). The remnant polarization increased by reducing the PZO layer thickness, and a ferroelectric like hysteresis loop was observed for the sample with dPZO∼22 nm. Local ferroelectric properties measured by piezoresponse force microscopy also exhibited a similar thickness-dependent antiferroelectric-ferroelectric transition. Room-temperature electrical properties observed in the PZO thin films in correlation to their structural characteristics suggested that a ferroelectric rhombohedral phase could be stabilized in thin epitaxial PZO films experiencing large interfacial compressive stress.

AB - PbZrO3/SrRuO3/SrTiO3 (100) epitaxial heterostructures with different thickness of the PbZrO3 (PZO) layer (dPZO∼5-160 nm) were fabricated by pulsed laser deposition. The ultrathin PZO films (dPZO≤10 nm) were found to possess a rhombohedral structure. On increasing the PZO film thickness, a bulk like orthorhombic phase started forming in the film with dPZO∼22 nm and became abundant in the thicker films. Nanobeam electron diffraction and room-temperature micro-Raman measurements revealed that the stabilization of the rhombohedral phase of PZO could be attributed to the epitaxial strain accommodated by the heterostructures. Room-temperature polarization vs electric field measurements performed on different samples showed characteristic double hysteresis loops of antiferroelectric materials accompanied by a small remnant polarization for the thick PZO films (dPZO50 nm). The remnant polarization increased by reducing the PZO layer thickness, and a ferroelectric like hysteresis loop was observed for the sample with dPZO∼22 nm. Local ferroelectric properties measured by piezoresponse force microscopy also exhibited a similar thickness-dependent antiferroelectric-ferroelectric transition. Room-temperature electrical properties observed in the PZO thin films in correlation to their structural characteristics suggested that a ferroelectric rhombohedral phase could be stabilized in thin epitaxial PZO films experiencing large interfacial compressive stress.

UR - http://www.scopus.com/inward/record.url?scp=80052354058&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.84.054112

DO - 10.1103/PhysRevB.84.054112

M3 - Article

VL - 84

JO - Physical Review B: Condensed Matter and Materials Physics

T2 - Physical Review B: Condensed Matter and Materials Physics

JF - Physical Review B: Condensed Matter and Materials Physics

SN - 1098-0121

IS - 5

M1 - 054112

ER -