Enhancement of UV luminescence in sol-gel prepared ZnO thin films by incorporation of Mg

S. Chakrabarti; S. Kar; A. Dev; S. Chaudhuri

doi:10.1002/pssa.200406925

Enhancement of UV luminescence in sol-gel prepared ZnO thin films by incorporation of Mg

S. Chakrabarti, S. Kar, A. Dev, S. Chaudhuri

School of Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Well-crystallized Mg _xZn _1-xO films were deposited on quartz substrates by sol-gel technique with a variation of x value from 0 to 0.15. The samples were annealed at different temperatures (500°C to 700°C) in air and oxygen atmosphere to study the effect of annealing atmosphere on the luminescence properties of the films. The optical, microstructural and photoluminescence properties of the films were studied. It was found that the band gap of the films increased with increasing Mg concentration (x value). A remarkable change in the photoluminescence spectra of the films for x = 0.05 was observed by varying the annealing atmosphere. Highly intense UV emission at room temperature could be obtained by annealing the Mg _0.05Zn _0.95O film in static oxygen atmosphere, while the intensity of the visible defect related luminescence could be reduced, resulting in a high intensity ratio (∼100) of the two.

Original language	English
Pages (from-to)	441-448
Number of pages	8
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	202
Issue number	3
DOIs	https://doi.org/10.1002/pssa.200406925
Publication status	Published (in print/issue) - 1 Feb 2005

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abstract = "Well-crystallized Mg xZn 1-xO films were deposited on quartz substrates by sol-gel technique with a variation of x value from 0 to 0.15. The samples were annealed at different temperatures (500°C to 700°C) in air and oxygen atmosphere to study the effect of annealing atmosphere on the luminescence properties of the films. The optical, microstructural and photoluminescence properties of the films were studied. It was found that the band gap of the films increased with increasing Mg concentration (x value). A remarkable change in the photoluminescence spectra of the films for x = 0.05 was observed by varying the annealing atmosphere. Highly intense UV emission at room temperature could be obtained by annealing the Mg 0.05Zn 0.95O film in static oxygen atmosphere, while the intensity of the visible defect related luminescence could be reduced, resulting in a high intensity ratio (∼100) of the two.",

author = "S. Chakrabarti and S. Kar and A. Dev and S. Chaudhuri",

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T1 - Enhancement of UV luminescence in sol-gel prepared ZnO thin films by incorporation of Mg

AU - Chakrabarti, S.

AU - Kar, S.

AU - Dev, A.

AU - Chaudhuri, S.

PY - 2005/2/1

Y1 - 2005/2/1

N2 - Well-crystallized Mg xZn 1-xO films were deposited on quartz substrates by sol-gel technique with a variation of x value from 0 to 0.15. The samples were annealed at different temperatures (500°C to 700°C) in air and oxygen atmosphere to study the effect of annealing atmosphere on the luminescence properties of the films. The optical, microstructural and photoluminescence properties of the films were studied. It was found that the band gap of the films increased with increasing Mg concentration (x value). A remarkable change in the photoluminescence spectra of the films for x = 0.05 was observed by varying the annealing atmosphere. Highly intense UV emission at room temperature could be obtained by annealing the Mg 0.05Zn 0.95O film in static oxygen atmosphere, while the intensity of the visible defect related luminescence could be reduced, resulting in a high intensity ratio (∼100) of the two.

AB - Well-crystallized Mg xZn 1-xO films were deposited on quartz substrates by sol-gel technique with a variation of x value from 0 to 0.15. The samples were annealed at different temperatures (500°C to 700°C) in air and oxygen atmosphere to study the effect of annealing atmosphere on the luminescence properties of the films. The optical, microstructural and photoluminescence properties of the films were studied. It was found that the band gap of the films increased with increasing Mg concentration (x value). A remarkable change in the photoluminescence spectra of the films for x = 0.05 was observed by varying the annealing atmosphere. Highly intense UV emission at room temperature could be obtained by annealing the Mg 0.05Zn 0.95O film in static oxygen atmosphere, while the intensity of the visible defect related luminescence could be reduced, resulting in a high intensity ratio (∼100) of the two.

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Enhancement of UV luminescence in sol-gel prepared ZnO thin films by incorporation of Mg

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