Enhancement of sp(3)-bonding in high-bias-voltage grown diamond-like carbon thin films studied by x-ray absorption and photoemission spectroscopy

SC Ray, CW Pao, HM Tsai, JW Chiou, WF Pong, MH Tsai, TIT Okpalugo, P Papakonstantinou, TW Pi

Research output: Contribution to journalArticle

4 Citations (Scopus)
1 Downloads (Pure)

Abstract

X-ray absorption near-edge structure (XANES) and valence- band photoemission spectroscopy (VB-PES) were used to elucidate the electronic and mechanical properties of diamond-like carbon (DLC) thin films deposited by the plasma-enhanced chemical vapour deposition method at various bias voltages (V-b) using a C2H2 vapour precursor in an Ar+ atmosphere. The increase of V-b is found to increase and decrease the contents of sp(3)- and sp(2)- bonded carbon atoms, respectively, i.e. the films become more diamond-like. The Young's modulus measurements show increases with the increase of the presence of sp3-bonded carbon atoms in the structure of the DLC films.
Original languageEnglish
Pages (from-to)176204
JournalJournal of Physics: Condensed Matter
Volume19
Issue number17
DOIs
Publication statusPublished - 28 May 2007

Fingerprint Dive into the research topics of 'Enhancement of sp(3)-bonding in high-bias-voltage grown diamond-like carbon thin films studied by x-ray absorption and photoemission spectroscopy'. Together they form a unique fingerprint.

  • Cite this