Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates

WC Fang; CL Sun; JH Huang; LC Chen; O Chyan; KH Chen; P Papakonstantinou

doi:10.1149/1.2166507

Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates

WC Fang, CL Sun, JH Huang, LC Chen, O Chyan, KH Chen, P Papakonstantinou

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Abstract

The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.

Original language	English
Pages (from-to)	A175-A178
Journal	ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume	9
Issue number	3
DOIs	https://doi.org/10.1149/1.2166507
Publication status	Published (in print/issue) - 18 Jan 2006

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Electrochemical and Solid state letters 2006Final published version, 372 KB

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title = "Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates",

abstract = "The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.",

author = "WC Fang and CL Sun and JH Huang and LC Chen and O Chyan and KH Chen and P Papakonstantinou",

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AU - Fang, WC

AU - Sun, CL

AU - Huang, JH

AU - Chen, LC

AU - Chyan, O

AU - Chen, KH

AU - Papakonstantinou, P

PY - 2006/1/18

Y1 - 2006/1/18

N2 - The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.

AB - The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.

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Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates

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