Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates

WC Fang, CL Sun, JH Huang, LC Chen, O Chyan, KH Chen, P Papakonstantinou

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.
LanguageEnglish
PagesA175-A178
JournalELECTROCHEMICAL AND SOLID STATE LETTERS
Volume9
Issue number3
DOIs
Publication statusPublished - 18 Jan 2006

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Carbon Nanotubes
Microsystems
Silicon
Buffer layers
Electrochemical properties
Nanotubes
Structural properties
Carbon nanotubes
nanotubes
Current density
Nitrogen
silicon
Substrates
buffers
carbon nanotubes
current density
nitrogen
conductivity
Oxidation-Reduction

Cite this

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abstract = "The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.",
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Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates. / Fang, WC; Sun, CL; Huang, JH; Chen, LC; Chyan, O; Chen, KH; Papakonstantinou, P.

In: ELECTROCHEMICAL AND SOLID STATE LETTERS, Vol. 9, No. 3, 18.01.2006, p. A175-A178.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced electrochemical properties of arrayed CNx nanotubes directly grown on Ti-buffered silicon substrates

AU - Fang, WC

AU - Sun, CL

AU - Huang, JH

AU - Chen, LC

AU - Chyan, O

AU - Chen, KH

AU - Papakonstantinou, P

PY - 2006/1/18

Y1 - 2006/1/18

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AB - The effects of a Ti buffer layer on structural and electrochemical properties of arrayed nitrogen-containing carbon nanotubes (CNx NTs) directly grown on Si substrates have been investigated. Cyclic voltammograms using Fe(CN)(6)(3-)/Fe(CN)(6)(4-) as redox couple were measured to study the electrochemical activities of CNx NTs. The highest peak current density was achieved at an optimal Ti thickness of 20 nm owing to the good conductivity of TiSi2 and high number density of NTs. Therefore, we have demonstrated the direct growth of aligned NTs on Ti- buffered Si with improved electrochemical activity that is believed to be suitable for advanced microsystem applications. (c) 2006 The Electrochemical Society.

U2 - 10.1149/1.2166507

DO - 10.1149/1.2166507

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SP - A175-A178

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