Enhanced and stable filed emission from in situ nitrogen-doped few-layered graphene nanoflakes

Navneet Soin; SS Roy; S Roy; KS Hazra; DS Misra; TH Lim; CJ Hetherington; JAD McLaughlin

doi:10.1021/jp110476m

Enhanced and stable filed emission from in situ nitrogen-doped few-layered graphene nanoflakes

Navneet Soin, SS Roy, S Roy, KS Hazra, DS Misra, TH Lim, CJ Hetherington, JAD McLaughlin

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Abstract

Vertically aligned few-layered graphene (FLG) nanoflakes were synthesized on bare silicon (Si) substrates by a microwave plasma enhanced chemical vapor deposition method. In situ nitrogen (N2) plasma treatment was carried out using electron cyclotron resonance plasma, resulting in various nitrogen functionalities being grafted to the FLG surface. Compared with pristine FLGs, the N2 plasma-treated FLGs showed significant improvement in field emission characteristics by lowering the turn-on field (defined at 10 μA/cm2) from 1.94 to 1.0 V/μm. Accordingly, the field emission current increased from 17 μA/cm2 at 2.16 V/μm for pristine FLGs to about 103 μA/cm2 at 1.45 V/μm for N-doped FLGs. Furthermore, N-doped FLG samples retained 94% of the starting current over a period of 10 000 s, during which the fluctuations were of the order of ±10.7% only. The field emission behavior of pristine and N2 plasma-treated FLGs is explained in terms of change in the effective microstructure as well as a reduction in the work function as probed by X-ray photoelectron valence band spectroscopy

Original language	English
Pages (from-to)	5366-5372
Journal	Journal of Physical Chemistry
Volume	115
Issue number	13
DOIs	https://doi.org/10.1021/jp110476m
Publication status	Published (in print/issue) - 2011

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@article{9a959b19ef9f4ed691595ac5603a0089,

title = "Enhanced and stable filed emission from in situ nitrogen-doped few-layered graphene nanoflakes",

abstract = "Vertically aligned few-layered graphene (FLG) nanoflakes were synthesized on bare silicon (Si) substrates by a microwave plasma enhanced chemical vapor deposition method. In situ nitrogen (N2) plasma treatment was carried out using electron cyclotron resonance plasma, resulting in various nitrogen functionalities being grafted to the FLG surface. Compared with pristine FLGs, the N2 plasma-treated FLGs showed significant improvement in field emission characteristics by lowering the turn-on field (defined at 10 μA/cm2) from 1.94 to 1.0 V/μm. Accordingly, the field emission current increased from 17 μA/cm2 at 2.16 V/μm for pristine FLGs to about 103 μA/cm2 at 1.45 V/μm for N-doped FLGs. Furthermore, N-doped FLG samples retained 94% of the starting current over a period of 10 000 s, during which the fluctuations were of the order of ±10.7% only. The field emission behavior of pristine and N2 plasma-treated FLGs is explained in terms of change in the effective microstructure as well as a reduction in the work function as probed by X-ray photoelectron valence band spectroscopy",

author = "Navneet Soin and SS Roy and S Roy and KS Hazra and DS Misra and TH Lim and CJ Hetherington and JAD McLaughlin",

year = "2011",

doi = "10.1021/jp110476m",

language = "English",

volume = "115",

pages = "5366--5372",

journal = "Journal of Physical Chemistry",

issn = "1932-7455",

publisher = "American Chemical Society",

number = "13",

}

TY - JOUR

T1 - Enhanced and stable filed emission from in situ nitrogen-doped few-layered graphene nanoflakes

AU - Soin, Navneet

AU - Roy, SS

AU - Roy, S

AU - Hazra, KS

AU - Misra, DS

AU - Lim, TH

AU - Hetherington, CJ

AU - McLaughlin, JAD

PY - 2011

Y1 - 2011

N2 - Vertically aligned few-layered graphene (FLG) nanoflakes were synthesized on bare silicon (Si) substrates by a microwave plasma enhanced chemical vapor deposition method. In situ nitrogen (N2) plasma treatment was carried out using electron cyclotron resonance plasma, resulting in various nitrogen functionalities being grafted to the FLG surface. Compared with pristine FLGs, the N2 plasma-treated FLGs showed significant improvement in field emission characteristics by lowering the turn-on field (defined at 10 μA/cm2) from 1.94 to 1.0 V/μm. Accordingly, the field emission current increased from 17 μA/cm2 at 2.16 V/μm for pristine FLGs to about 103 μA/cm2 at 1.45 V/μm for N-doped FLGs. Furthermore, N-doped FLG samples retained 94% of the starting current over a period of 10 000 s, during which the fluctuations were of the order of ±10.7% only. The field emission behavior of pristine and N2 plasma-treated FLGs is explained in terms of change in the effective microstructure as well as a reduction in the work function as probed by X-ray photoelectron valence band spectroscopy

AB - Vertically aligned few-layered graphene (FLG) nanoflakes were synthesized on bare silicon (Si) substrates by a microwave plasma enhanced chemical vapor deposition method. In situ nitrogen (N2) plasma treatment was carried out using electron cyclotron resonance plasma, resulting in various nitrogen functionalities being grafted to the FLG surface. Compared with pristine FLGs, the N2 plasma-treated FLGs showed significant improvement in field emission characteristics by lowering the turn-on field (defined at 10 μA/cm2) from 1.94 to 1.0 V/μm. Accordingly, the field emission current increased from 17 μA/cm2 at 2.16 V/μm for pristine FLGs to about 103 μA/cm2 at 1.45 V/μm for N-doped FLGs. Furthermore, N-doped FLG samples retained 94% of the starting current over a period of 10 000 s, during which the fluctuations were of the order of ±10.7% only. The field emission behavior of pristine and N2 plasma-treated FLGs is explained in terms of change in the effective microstructure as well as a reduction in the work function as probed by X-ray photoelectron valence band spectroscopy

U2 - 10.1021/jp110476m

DO - 10.1021/jp110476m

M3 - Article

SN - 1932-7455

VL - 115

SP - 5366

EP - 5372

JO - Journal of Physical Chemistry

JF - Journal of Physical Chemistry

IS - 13

ER -

Enhanced and stable filed emission from in situ nitrogen-doped few-layered graphene nanoflakes

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