Energy band diagram of device-grade silicon nanocrystals

Manuel Macias-Montero, S. Askari, S. Mitra, C. Rocks, C Ni, V. Svrcek, P. A. Connor, P Maguire, J. T. S. Irvine, D Mariotti

Research output: Contribution to journalArticlepeer-review

22 Citations (Scopus)
58 Downloads (Pure)


Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.
Original languageEnglish
Pages (from-to)6623-6628
Number of pages6
Issue number12
Early online date23 Feb 2016
Publication statusPublished (in print/issue) - 28 Mar 2016


  • silicon nanocrystals
  • plasma


Dive into the research topics of 'Energy band diagram of device-grade silicon nanocrystals'. Together they form a unique fingerprint.

Cite this