Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.
- silicon nanocrystals
Macias-Montero, M., Askari, S., Mitra, S., Rocks, C., Ni, C., Svrcek, V., Connor, P. A., Maguire, P., Irvine, J. T. S., & Mariotti, D. (2016). Energy band diagram of device-grade silicon nanocrystals. Nanoscale, 8, 6623-6628. https://doi.org/10.1039/C5NR07705B