Energy band diagram of device-grade silicon nanocrystals

Manuel Macias-Montero, S. Askari, S. Mitra, C. Rocks, C Ni, V. Svrcek, P. A. Connor, P Maguire, J. T. S. Irvine, D Mariotti

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Abstract

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.
Original languageEnglish
Pages (from-to)6623-6628
JournalNanoscale
Volume8
Early online date23 Feb 2016
DOIs
Publication statusPublished - 28 Mar 2016

Keywords

  • silicon nanocrystals
  • plasma

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    Macias-Montero, M., Askari, S., Mitra, S., Rocks, C., Ni, C., Svrcek, V., Connor, P. A., Maguire, P., Irvine, J. T. S., & Mariotti, D. (2016). Energy band diagram of device-grade silicon nanocrystals. Nanoscale, 8, 6623-6628. https://doi.org/10.1039/C5NR07705B