Energy band diagram of device-grade silicon nanocrystals

Manuel Macias-Montero, S. Askari, S. Mitra, C. Rocks, C Ni, V. Svrcek, P. A. Connor, P Maguire, J. T. S. Irvine, D Mariotti

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.
LanguageEnglish
Pages6623-6628
JournalNanoscale
Volume8
Early online date23 Feb 2016
DOIs
Publication statusPublished - 28 Mar 2016

Fingerprint

Silicon
Band structure
Nanocrystals
Chemical stability
Photoelectron spectroscopy
Ultraviolet spectroscopy
Atmospheric pressure
Hydrogen
Durability
Plasmas
Thin films

Keywords

  • silicon nanocrystals
  • plasma

Cite this

Macias-Montero, M., Askari, S., Mitra, S., Rocks, C., Ni, C., Svrcek, V., ... Mariotti, D. (2016). Energy band diagram of device-grade silicon nanocrystals. Nanoscale, 8, 6623-6628. https://doi.org/10.1039/C5NR07705B
Macias-Montero, Manuel ; Askari, S. ; Mitra, S. ; Rocks, C. ; Ni, C ; Svrcek, V. ; Connor, P. A. ; Maguire, P ; Irvine, J. T. S. ; Mariotti, D. / Energy band diagram of device-grade silicon nanocrystals. In: Nanoscale. 2016 ; Vol. 8. pp. 6623-6628.
@article{95332ab706a947e99f5f09debc7b7227,
title = "Energy band diagram of device-grade silicon nanocrystals",
abstract = "Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.",
keywords = "silicon nanocrystals, plasma",
author = "Manuel Macias-Montero and S. Askari and S. Mitra and C. Rocks and C Ni and V. Svrcek and Connor, {P. A.} and P Maguire and Irvine, {J. T. S.} and D Mariotti",
year = "2016",
month = "3",
day = "28",
doi = "10.1039/C5NR07705B",
language = "English",
volume = "8",
pages = "6623--6628",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",

}

Macias-Montero, M, Askari, S, Mitra, S, Rocks, C, Ni, C, Svrcek, V, Connor, PA, Maguire, P, Irvine, JTS & Mariotti, D 2016, 'Energy band diagram of device-grade silicon nanocrystals', Nanoscale, vol. 8, pp. 6623-6628. https://doi.org/10.1039/C5NR07705B

Energy band diagram of device-grade silicon nanocrystals. / Macias-Montero, Manuel; Askari, S.; Mitra, S.; Rocks, C.; Ni, C; Svrcek, V.; Connor, P. A.; Maguire, P; Irvine, J. T. S.; Mariotti, D.

In: Nanoscale, Vol. 8, 28.03.2016, p. 6623-6628.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Energy band diagram of device-grade silicon nanocrystals

AU - Macias-Montero, Manuel

AU - Askari, S.

AU - Mitra, S.

AU - Rocks, C.

AU - Ni, C

AU - Svrcek, V.

AU - Connor, P. A.

AU - Maguire, P

AU - Irvine, J. T. S.

AU - Mariotti, D

PY - 2016/3/28

Y1 - 2016/3/28

N2 - Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

AB - Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

KW - silicon nanocrystals

KW - plasma

U2 - 10.1039/C5NR07705B

DO - 10.1039/C5NR07705B

M3 - Article

VL - 8

SP - 6623

EP - 6628

JO - Nanoscale

T2 - Nanoscale

JF - Nanoscale

SN - 2040-3364

ER -

Macias-Montero M, Askari S, Mitra S, Rocks C, Ni C, Svrcek V et al. Energy band diagram of device-grade silicon nanocrystals. Nanoscale. 2016 Mar 28;8:6623-6628. https://doi.org/10.1039/C5NR07705B