Energy band diagram of device-grade silicon nanocrystals

Manuel Macias-Montero; S. Askari; S. Mitra; C. Rocks; C Ni; V. Svrcek; P. A. Connor; P Maguire; J. T. S. Irvine; D Mariotti

doi:10.1039/C5NR07705B

Energy band diagram of device-grade silicon nanocrystals

Manuel Macias-Montero, S. Askari, S. Mitra, C. Rocks, C Ni, V. Svrcek, P. A. Connor, P Maguire, J. T. S. Irvine, D Mariotti

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

73 Downloads (Pure)

Abstract

Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

Original language	English
Pages (from-to)	6623-6628
Number of pages	6
Journal	Nanoscale
Volume	8
Issue number	12
Early online date	23 Feb 2016
DOIs	https://doi.org/10.1039/C5NR07705B
Publication status	Published (in print/issue) - 28 Mar 2016

Keywords

silicon nanocrystals
plasma

Access to Document

10.1039/C5NR07705BLicence: CC BY

2016-Nanoscale Manuel-SiNCsEBDFinal published version, 1.89 MBLicence: CC BY

Cite this

@article{95332ab706a947e99f5f09debc7b7227,

title = "Energy band diagram of device-grade silicon nanocrystals",

abstract = "Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.",

keywords = "silicon nanocrystals, plasma",

author = "Manuel Macias-Montero and S. Askari and S. Mitra and C. Rocks and C Ni and V. Svrcek and Connor, {P. A.} and P Maguire and Irvine, {J. T. S.} and D Mariotti",

year = "2016",

month = mar,

day = "28",

doi = "10.1039/C5NR07705B",

language = "English",

volume = "8",

pages = "6623--6628",

journal = "Nanoscale",

issn = "2040-3372",

publisher = "Royal Society of Chemistry",

number = "12",

}

TY - JOUR

T1 - Energy band diagram of device-grade silicon nanocrystals

AU - Macias-Montero, Manuel

AU - Askari, S.

AU - Mitra, S.

AU - Rocks, C.

AU - Ni, C

AU - Svrcek, V.

AU - Connor, P. A.

AU - Maguire, P

AU - Irvine, J. T. S.

AU - Mariotti, D

PY - 2016/3/28

Y1 - 2016/3/28

N2 - Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

AB - Device grade silicon nanocrystals (NCs) are synthesized using an atmospheric-pressure plasma technique. The Si NCs have a small and well defined size of about 2.3 nm. The synthesis system allows for the direct creation of thin films, enabling a range of measurements to be performed and easy implementation of this material in different devices. The chemical stability of the Si NCs is evaluated, showing relatively long-term durability thanks to hydrogen surface terminations. Optical and electrical characterization techniques, including Kelvin probe, ultraviolet photoemission spectroscopy and Mott-Schottky analysis, are employed to determine the energy band diagram of the Si NCs.

KW - silicon nanocrystals

KW - plasma

UR - https://pure.ulster.ac.uk/en/publications/energy-band-diagram-of-device-grade-silicon-nanocrystals-3

U2 - 10.1039/C5NR07705B

DO - 10.1039/C5NR07705B

M3 - Article

SN - 2040-3372

VL - 8

SP - 6623

EP - 6628

JO - Nanoscale

JF - Nanoscale

IS - 12

ER -

Energy band diagram of device-grade silicon nanocrystals

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Davide Mariotti

Cite this

Energy band diagram of device-grade silicon nanocrystals

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Profiles

Davide Mariotti

Cite this