Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films

SC Ray, TIT Okpalugo, CW Pao, HM Tsai, JW Chiou, JC Jan, WF Pong, P Papakonstantinou, JAD McLaughlin, WJ Wang

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15 Citations (Scopus)

Abstract

We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)(4), TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H-n and C-H-n modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. (C) 2005 Elsevier Ltd. All rights reserved.
Original languageEnglish
Pages (from-to)1757-1764
JournalMaterials Research Bulletin
Volume40
Issue number10
Early online date20 Jun 2005
DOIs
Publication statusPublished - 6 Oct 2005

Keywords

  • thin film
  • vapour deposition
  • infrared spectroscopy
  • luminescence

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