Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films

SC Ray, TIT Okpalugo, CW Pao, HM Tsai, JW Chiou, JC Jan, WF Pong, P Papakonstantinou, JAD McLaughlin, WJ Wang

Research output: Contribution to journalArticle

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Abstract

We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)(4), TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H-n and C-H-n modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. (C) 2005 Elsevier Ltd. All rights reserved.
LanguageEnglish
Pages1757-1764
JournalMaterials Research Bulletin
Volume40
Issue number10
Early online date20 Jun 2005
DOIs
Publication statusPublished - 6 Oct 2005

Fingerprint

Diamond
Carbon films
Silicon
Electronic structure
Diamonds
Photoluminescence
diamonds
electronic structure
photoluminescence
Thin films
carbon
silicon
thin films
Fourier transforms
infrared spectra
flow velocity
Flow rate
Infrared radiation
Plasma enhanced chemical vapor deposition
Bias voltage

Keywords

  • thin film
  • vapour deposition
  • infrared spectroscopy
  • luminescence

Cite this

Ray, SC ; Okpalugo, TIT ; Pao, CW ; Tsai, HM ; Chiou, JW ; Jan, JC ; Pong, WF ; Papakonstantinou, P ; McLaughlin, JAD ; Wang, WJ. / Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films. In: Materials Research Bulletin. 2005 ; Vol. 40, No. 10. pp. 1757-1764.
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Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films. / Ray, SC; Okpalugo, TIT; Pao, CW; Tsai, HM; Chiou, JW; Jan, JC; Pong, WF; Papakonstantinou, P; McLaughlin, JAD; Wang, WJ.

In: Materials Research Bulletin, Vol. 40, No. 10, 06.10.2005, p. 1757-1764.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films

AU - Ray, SC

AU - Okpalugo, TIT

AU - Pao, CW

AU - Tsai, HM

AU - Chiou, JW

AU - Jan, JC

AU - Pong, WF

AU - Papakonstantinou, P

AU - McLaughlin, JAD

AU - Wang, WJ

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AB - We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)(4), TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H-n and C-H-n modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. (C) 2005 Elsevier Ltd. All rights reserved.

KW - thin film

KW - vapour deposition

KW - infrared spectroscopy

KW - luminescence

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