Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films

SC Ray; TIT Okpalugo; CW Pao; HM Tsai; JW Chiou; JC Jan; WF Pong; P Papakonstantinou; JAD McLaughlin; WJ Wang

doi:10.1016/j.materresbull.2005.05.009

Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films

SC Ray, TIT Okpalugo, CW Pao, HM Tsai, JW Chiou, JC Jan, WF Pong, P Papakonstantinou, JAD McLaughlin, WJ Wang

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)(4), TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H-n and C-H-n modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. (C) 2005 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	1757-1764
Journal	Materials Research Bulletin
Volume	40
Issue number	10
Early online date	20 Jun 2005
DOIs	https://doi.org/10.1016/j.materresbull.2005.05.009
Publication status	Published (in print/issue) - 6 Oct 2005

Keywords

thin film
vapour deposition
infrared spectroscopy
luminescence

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10.1016/j.materresbull.2005.05.009

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title = "Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films",

abstract = "We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)(4), TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H-n and C-H-n modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. (C) 2005 Elsevier Ltd. All rights reserved.",

keywords = "thin film, vapour deposition, infrared spectroscopy, luminescence",

author = "SC Ray and TIT Okpalugo and CW Pao and HM Tsai and JW Chiou and JC Jan and WF Pong and P Papakonstantinou and JAD McLaughlin and WJ Wang",

year = "2005",

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doi = "10.1016/j.materresbull.2005.05.009",

language = "English",

volume = "40",

pages = "1757--1764",

journal = "Materials Research Bulletin",

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TY - JOUR

T1 - Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films

AU - Ray, SC

AU - Okpalugo, TIT

AU - Pao, CW

AU - Tsai, HM

AU - Chiou, JW

AU - Jan, JC

AU - Pong, WF

AU - Papakonstantinou, P

AU - McLaughlin, JAD

AU - Wang, WJ

PY - 2005/10/6

Y1 - 2005/10/6

N2 - We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)(4), TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H-n and C-H-n modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. (C) 2005 Elsevier Ltd. All rights reserved.

AB - We have investigated the electronic and bonding structure using Fourier-transform infra-red (FT-IR) spectra and studied photoluminescence (PL) from micro-Raman spectra analysis of a-C:H:Si (Si:DLC) thin films deposited by plasma enhanced chemical vapour deposition (PECVD) method. Tetramethylsilane [Si(CH3)(4), TMS] vapour was used as Silicon precursor and a bias voltage of 400 V was applied during deposition. It is observed from FT-IR spectra that with increasing TMS flow rate, the intensity of Si-H-n and C-H-n modes is increased significantly. PL study indicates that the PL is increased and that the PL peak position is shifted towards lower energy when the TMS flow rate increases gradually during deposition. (C) 2005 Elsevier Ltd. All rights reserved.

KW - thin film

KW - vapour deposition

KW - infrared spectroscopy

KW - luminescence

U2 - 10.1016/j.materresbull.2005.05.009

DO - 10.1016/j.materresbull.2005.05.009

M3 - Article

VL - 40

SP - 1757

EP - 1764

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 10

ER -

Electronic structure and photoluminescence study of silicon doped diamond like carbon (Si : DLC) thin films

Abstract

Keywords

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