Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films

SC Ray, TIT Okpalugo, P Papakonstantinou, CW Bao, HM Tsai, JW Chiou, JC Jan, WF Pong, JAD McLaughlin, WJ Wang

Research output: Contribution to journalArticle

Abstract

In this article, we have investigated the electronic structures of silicon-doped and undoped diamond-like carbon (DLC) thin films using Fourier transform infrared (FTIR) spectra, Raman spectra, photoluminescence (PL), and X-ray absorption near edge structure (XANES) spectroscopy. The films were deposited by Plasma-Enhanced Chemical Vapour Deposition (PECVD) method in argon atmosphere using C2H2 and/or Si(CH3)(4) vapour precursors. Raman spectra displayed a decrease in (I-D/I-G) ratio for films synthesized using Si(CH3)4 vapour, indicative of the formation of more diamond-like (sp(3) rich) films. The PL intensities and the full width at half maximum (FWHM) of the PL band increased, whereas PL peak position shifted towards lower energies when the Si incorporation was increased in the film. FTIR spectra revealed an increase in Si-H-n and C-H-n bonding intensity at 2100 cm(-1) and 2900 cm(-1), respectively, with increased Si incorporation. Hardness as well as the Young's modulus changed with not only the sp(2) content present in the film, but also decrease in the three-dimensional interlinks of the C-C atomic bond structure by the C-H-n and Si-H-n, weaker bonds. (c) 2004 Elsevier B.V. All rights reserved.
LanguageEnglish
Pages242-247
JournalThin Solid Films
Volume482
Issue number1-2
DOIs
Publication statusPublished - Jun 2005

Fingerprint

Diamond like carbon films
hardening
Electronic structure
Hardening
diamonds
electronic structure
Photoluminescence
carbon
photoluminescence
Diamond
Raman scattering
Diamonds
Fourier transforms
infrared spectra
Vapors
vapors
Raman spectra
X ray absorption near edge structure spectroscopy
Infrared radiation
Argon

Keywords

  • DLC thin film
  • FTIR
  • Raman
  • XANES

Cite this

Ray, SC ; Okpalugo, TIT ; Papakonstantinou, P ; Bao, CW ; Tsai, HM ; Chiou, JW ; Jan, JC ; Pong, WF ; McLaughlin, JAD ; Wang, WJ. / Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films. In: Thin Solid Films. 2005 ; Vol. 482, No. 1-2. pp. 242-247.
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abstract = "In this article, we have investigated the electronic structures of silicon-doped and undoped diamond-like carbon (DLC) thin films using Fourier transform infrared (FTIR) spectra, Raman spectra, photoluminescence (PL), and X-ray absorption near edge structure (XANES) spectroscopy. The films were deposited by Plasma-Enhanced Chemical Vapour Deposition (PECVD) method in argon atmosphere using C2H2 and/or Si(CH3)(4) vapour precursors. Raman spectra displayed a decrease in (I-D/I-G) ratio for films synthesized using Si(CH3)4 vapour, indicative of the formation of more diamond-like (sp(3) rich) films. The PL intensities and the full width at half maximum (FWHM) of the PL band increased, whereas PL peak position shifted towards lower energies when the Si incorporation was increased in the film. FTIR spectra revealed an increase in Si-H-n and C-H-n bonding intensity at 2100 cm(-1) and 2900 cm(-1), respectively, with increased Si incorporation. Hardness as well as the Young's modulus changed with not only the sp(2) content present in the film, but also decrease in the three-dimensional interlinks of the C-C atomic bond structure by the C-H-n and Si-H-n, weaker bonds. (c) 2004 Elsevier B.V. All rights reserved.",
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author = "SC Ray and TIT Okpalugo and P Papakonstantinou and CW Bao and HM Tsai and JW Chiou and JC Jan and WF Pong and JAD McLaughlin and WJ Wang",
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Ray, SC, Okpalugo, TIT, Papakonstantinou, P, Bao, CW, Tsai, HM, Chiou, JW, Jan, JC, Pong, WF, McLaughlin, JAD & Wang, WJ 2005, 'Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films', Thin Solid Films, vol. 482, no. 1-2, pp. 242-247. https://doi.org/10.1016/j.tsf.2004.11.152

Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films. / Ray, SC; Okpalugo, TIT; Papakonstantinou, P; Bao, CW; Tsai, HM; Chiou, JW; Jan, JC; Pong, WF; McLaughlin, JAD; Wang, WJ.

In: Thin Solid Films, Vol. 482, No. 1-2, 06.2005, p. 242-247.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic structure and hardening mechanism of Si-doped/undoped diamond-like carbon films

AU - Ray, SC

AU - Okpalugo, TIT

AU - Papakonstantinou, P

AU - Bao, CW

AU - Tsai, HM

AU - Chiou, JW

AU - Jan, JC

AU - Pong, WF

AU - McLaughlin, JAD

AU - Wang, WJ

N1 - Symposium on Synthesis, Characterisation and Advanced Application of Amorphous Carbon Films, Strasbourg, FRANCE, MAY 24-28, 2004

PY - 2005/6

Y1 - 2005/6

N2 - In this article, we have investigated the electronic structures of silicon-doped and undoped diamond-like carbon (DLC) thin films using Fourier transform infrared (FTIR) spectra, Raman spectra, photoluminescence (PL), and X-ray absorption near edge structure (XANES) spectroscopy. The films were deposited by Plasma-Enhanced Chemical Vapour Deposition (PECVD) method in argon atmosphere using C2H2 and/or Si(CH3)(4) vapour precursors. Raman spectra displayed a decrease in (I-D/I-G) ratio for films synthesized using Si(CH3)4 vapour, indicative of the formation of more diamond-like (sp(3) rich) films. The PL intensities and the full width at half maximum (FWHM) of the PL band increased, whereas PL peak position shifted towards lower energies when the Si incorporation was increased in the film. FTIR spectra revealed an increase in Si-H-n and C-H-n bonding intensity at 2100 cm(-1) and 2900 cm(-1), respectively, with increased Si incorporation. Hardness as well as the Young's modulus changed with not only the sp(2) content present in the film, but also decrease in the three-dimensional interlinks of the C-C atomic bond structure by the C-H-n and Si-H-n, weaker bonds. (c) 2004 Elsevier B.V. All rights reserved.

AB - In this article, we have investigated the electronic structures of silicon-doped and undoped diamond-like carbon (DLC) thin films using Fourier transform infrared (FTIR) spectra, Raman spectra, photoluminescence (PL), and X-ray absorption near edge structure (XANES) spectroscopy. The films were deposited by Plasma-Enhanced Chemical Vapour Deposition (PECVD) method in argon atmosphere using C2H2 and/or Si(CH3)(4) vapour precursors. Raman spectra displayed a decrease in (I-D/I-G) ratio for films synthesized using Si(CH3)4 vapour, indicative of the formation of more diamond-like (sp(3) rich) films. The PL intensities and the full width at half maximum (FWHM) of the PL band increased, whereas PL peak position shifted towards lower energies when the Si incorporation was increased in the film. FTIR spectra revealed an increase in Si-H-n and C-H-n bonding intensity at 2100 cm(-1) and 2900 cm(-1), respectively, with increased Si incorporation. Hardness as well as the Young's modulus changed with not only the sp(2) content present in the film, but also decrease in the three-dimensional interlinks of the C-C atomic bond structure by the C-H-n and Si-H-n, weaker bonds. (c) 2004 Elsevier B.V. All rights reserved.

KW - DLC thin film

KW - FTIR

KW - Raman

KW - XANES

U2 - 10.1016/j.tsf.2004.11.152

DO - 10.1016/j.tsf.2004.11.152

M3 - Article

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EP - 247

JO - Thin Solid Films

T2 - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 1-2

ER -