Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

SC Ray; CW Bao; HM Tsai; JW Chiou; JC Jan; KPK Kumar; WF Pong; MH Tsai; WJ Wang; CJ Hsu; TIT Okpalugo; P Papakonstantinou; JAD McLaughlin

doi:10.1063/1.1812594

Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

SC Ray
, CW Bao
, HM Tsai
, JW Chiou
, JC Jan
, KPK Kumar
, WF Pong
, MH Tsai
, WJ Wang
, CJ Hsu
, TIT Okpalugo
, P Papakonstantinou
, JAD McLaughlin

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

145 Downloads (Pure)

Abstract

This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C-Hn structure and Si-Hn bonds, which causes the Young's modulus and hardness of the films to decrease with the increase of the Si content. Copyright American Institute of Physics 2004

Original language	English
Pages (from-to)	4022-4024
Journal	Applied Physics Letters
Volume	85
Issue number	18
Early online date	3 Nov 2004
DOIs	https://doi.org/10.1063/1.1812594
Publication status	Published online - 3 Nov 2004

Keywords

diamond-like carbon
hydrogen
silicon
thin films
amorphous state
XANES
valence bands
Young's modulus
hardness
impurity distribution
infrared spectra
Fourier transform spectra
photoelectron spectroscopy

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Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon filmsFinal published version, 76.9 KB

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Ray, SC., Bao, CW., Tsai, HM., Chiou, JW., Jan, JC., Kumar, KPK., Pong, WF., Tsai, MH., Wang, WJ., Hsu, CJ., Okpalugo, TIT., Papakonstantinou, P., & McLaughlin, JAD. (2004). Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films. Applied Physics Letters, 85(18), 4022-4024. Advance online publication. https://doi.org/10.1063/1.1812594

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title = "Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films",

abstract = "This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping\% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C-Hn structure and Si-Hn bonds, which causes the Young's modulus and hardness of the films to decrease with the increase of the Si content. Copyright American Institute of Physics 2004",

keywords = "diamond-like carbon, hydrogen, silicon, thin films, amorphous state, XANES, valence bands, Young's modulus, hardness, impurity distribution, infrared spectra, Fourier transform spectra, photoelectron spectroscopy",

author = "SC Ray and CW Bao and HM Tsai and JW Chiou and JC Jan and KPK Kumar and WF Pong and MH Tsai and WJ Wang and CJ Hsu and TIT Okpalugo and P Papakonstantinou and JAD McLaughlin",

year = "2004",

month = nov,

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doi = "10.1063/1.1812594",

language = "English",

volume = "85",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

AU - Ray, SC

AU - Bao, CW

AU - Tsai, HM

AU - Chiou, JW

AU - Jan, JC

AU - Kumar, KPK

AU - Pong, WF

AU - Tsai, MH

AU - Wang, WJ

AU - Hsu, CJ

AU - Okpalugo, TIT

AU - Papakonstantinou, P

AU - McLaughlin, JAD

PY - 2004/11/3

Y1 - 2004/11/3

N2 - This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C-Hn structure and Si-Hn bonds, which causes the Young's modulus and hardness of the films to decrease with the increase of the Si content. Copyright American Institute of Physics 2004

AB - This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C-Hn structure and Si-Hn bonds, which causes the Young's modulus and hardness of the films to decrease with the increase of the Si content. Copyright American Institute of Physics 2004

KW - diamond-like carbon

KW - hydrogen

KW - silicon

KW - thin films

KW - amorphous state

KW - XANES

KW - valence bands

KW - Young's modulus

KW - hardness

KW - impurity distribution

KW - infrared spectra

KW - Fourier transform spectra

KW - photoelectron spectroscopy

U2 - 10.1063/1.1812594

DO - 10.1063/1.1812594

M3 - Article

SN - 1077-3118

VL - 85

SP - 4022

EP - 4024

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

ER -

Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

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Keywords

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