Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films

SC Ray, CW Bao, HM Tsai, JW Chiou, JC Jan, KPK Kumar, WF Pong, MH Tsai, WJ Wang, CJ Hsu, TIT Okpalugo, P Papakonstantinou, JAD McLaughlin

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Abstract

This work investigates the C K-edge x-ray absorption near-edge structure (XANES), valence-band photoelectron spectroscopy (PES), and Fourier transform infrared (FTIR) spectra of Si-doped hydrogenated amorphous carbon films. The C K-edge XANES and valence-band PES spectra indicate that the sp2/sp3 population ratio decreases as the amount of tetramethylsilane vapor precursor increases during deposition, which suggest that Si doping% enhances sp3 and reduces sp2-bonding configurations. FTIR spectra show the formation of a polymeric sp3 C-Hn structure and Si-Hn bonds, which causes the Young's modulus and hardness of the films to decrease with the increase of the Si content. Copyright American Institute of Physics 2004
Original languageEnglish
Pages (from-to)4022-4024
JournalApplied Physics Letters
Volume85
Issue number18
Early online date3 Nov 2004
DOIs
Publication statusE-pub ahead of print - 3 Nov 2004

Keywords

  • diamond-like carbon
  • hydrogen
  • silicon
  • thin films
  • amorphous state
  • XANES
  • valence bands
  • Young's modulus
  • hardness
  • impurity distribution
  • infrared spectra
  • Fourier transform spectra
  • photoelectron spectroscopy

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    Ray, SC., Bao, CW., Tsai, HM., Chiou, JW., Jan, JC., Kumar, KPK., Pong, WF., Tsai, MH., Wang, WJ., Hsu, CJ., Okpalugo, TIT., Papakonstantinou, P., & McLaughlin, JAD. (2004). Electronic structure and bonding properties of Si-doped hydrogenated amorphous carbon films. Applied Physics Letters, 85(18), 4022-4024. https://doi.org/10.1063/1.1812594