Electrochemical Investigation of Doped Titanium Dioxide

Research output: Contribution to journalArticle

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Abstract

Thin films of transition-metal doped (0.2, 1.0, and 5.0 atom%) TiO2 were prepared on titanium foil using a sol-gel route catalyzed by ammonium acetate. Dopants investigated were the fourth-period transition metals. The prepared films were characterised by Raman spectroscopy, Auger electron spectroscopy, and photoelectrochemical methods. The films doped with transition metals showed a lower photocurrent response than undoped samples. No major red shift in the photocurrent response spectra of the doped films was observed. A photocurrent response was observed under visible light irradiation of the samples and was potential dependent peaking around −0.3 V (SCE), which is indicative of electron promotion from a filled defect level. Examination of the defect level potential dependence by analysis of the current-time response under chopped illumination at fixed potential (−0.8 V–+1.07 V) gave a good correlation with the potential dependence observed in the visible light irradiation studies.
LanguageEnglish
Pages1
JournalInternational Journal of Photoenergy
Volume2008
DOIs
Publication statusPublished - 2008

Fingerprint

Photocurrents
titanium oxides
Titanium dioxide
Transition metals
photocurrents
transition metals
Irradiation
Defects
Auger electron spectroscopy
Titanium
Metal foil
irradiation
Sol-gels
Raman spectroscopy
time response
defects
promotion
Lighting
Doping (additives)
red shift

Cite this

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title = "Electrochemical Investigation of Doped Titanium Dioxide",
abstract = "Thin films of transition-metal doped (0.2, 1.0, and 5.0 atom{\%}) TiO2 were prepared on titanium foil using a sol-gel route catalyzed by ammonium acetate. Dopants investigated were the fourth-period transition metals. The prepared films were characterised by Raman spectroscopy, Auger electron spectroscopy, and photoelectrochemical methods. The films doped with transition metals showed a lower photocurrent response than undoped samples. No major red shift in the photocurrent response spectra of the doped films was observed. A photocurrent response was observed under visible light irradiation of the samples and was potential dependent peaking around −0.3 V (SCE), which is indicative of electron promotion from a filled defect level. Examination of the defect level potential dependence by analysis of the current-time response under chopped illumination at fixed potential (−0.8 V–+1.07 V) gave a good correlation with the potential dependence observed in the visible light irradiation studies.",
author = "JWJ Hamilton and JA Byrne and C McCullagh and PSM Dunlop",
year = "2008",
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language = "English",
volume = "2008",
pages = "1",
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}

Electrochemical Investigation of Doped Titanium Dioxide. / Hamilton, JWJ; Byrne, JA; McCullagh, C; Dunlop, PSM.

In: International Journal of Photoenergy, Vol. 2008, 2008, p. 1.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrochemical Investigation of Doped Titanium Dioxide

AU - Hamilton, JWJ

AU - Byrne, JA

AU - McCullagh, C

AU - Dunlop, PSM

PY - 2008

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N2 - Thin films of transition-metal doped (0.2, 1.0, and 5.0 atom%) TiO2 were prepared on titanium foil using a sol-gel route catalyzed by ammonium acetate. Dopants investigated were the fourth-period transition metals. The prepared films were characterised by Raman spectroscopy, Auger electron spectroscopy, and photoelectrochemical methods. The films doped with transition metals showed a lower photocurrent response than undoped samples. No major red shift in the photocurrent response spectra of the doped films was observed. A photocurrent response was observed under visible light irradiation of the samples and was potential dependent peaking around −0.3 V (SCE), which is indicative of electron promotion from a filled defect level. Examination of the defect level potential dependence by analysis of the current-time response under chopped illumination at fixed potential (−0.8 V–+1.07 V) gave a good correlation with the potential dependence observed in the visible light irradiation studies.

AB - Thin films of transition-metal doped (0.2, 1.0, and 5.0 atom%) TiO2 were prepared on titanium foil using a sol-gel route catalyzed by ammonium acetate. Dopants investigated were the fourth-period transition metals. The prepared films were characterised by Raman spectroscopy, Auger electron spectroscopy, and photoelectrochemical methods. The films doped with transition metals showed a lower photocurrent response than undoped samples. No major red shift in the photocurrent response spectra of the doped films was observed. A photocurrent response was observed under visible light irradiation of the samples and was potential dependent peaking around −0.3 V (SCE), which is indicative of electron promotion from a filled defect level. Examination of the defect level potential dependence by analysis of the current-time response under chopped illumination at fixed potential (−0.8 V–+1.07 V) gave a good correlation with the potential dependence observed in the visible light irradiation studies.

U2 - 10.1155/2008/631597

DO - 10.1155/2008/631597

M3 - Article

VL - 2008

SP - 1

JO - International Journal of Photoenergy

T2 - International Journal of Photoenergy

JF - International Journal of Photoenergy

SN - 1110-662X

ER -