Effect of substrate bias voltage and substrate on the structural properties of amorphous carbon films deposited by unbalanced magnetron sputtering

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Abstract

Amorphous carbon (a-C) films have been produced by unbalanced magnetron sputtering (UBMS) on silicon (Si), aluminium (Al), and chromium (Cr) substrates as a function of substrate bias voltage. The chemical bonding configurations were investigated by Raman and near-edge X-ray absorption fine structure (NEXAFS) spectroscopies. It was found that the structural changes induced by bias voltage are substrate-dependent, revealing the key role of the substrate type on film microstructures. The Raman G peak position and I-D/I-G ratio were strongly dependent on substrate material and negative bias voltage. Negative bias voltage had a small effect on the structure of carbon films on metal substrates (Al and Cr). However, the films on silicon showed significant change in the structure with bias voltage. The intensity and area of pi* peak at the C K (carbon) edge increased with the increase of substrate bias voltage. The NEXAFS analysis was in agreement with Raman observations, which clearly indicated an increase Of sp(2) content with increasing bias voltage. The films deposited in the low-bias voltage regime (50-100 V) showed reduced sp(2) configurations. The possible changes of structure with substrate bias are thoroughly discussed. (c) 2004 Elsevier B.V. All rights reserved.
LanguageEnglish
Pages45-49
JournalThin Solid Films
Volume482
Issue number1-2
DOIs
Publication statusPublished - Jun 2005

Fingerprint

Carbon films
Amorphous carbon
Amorphous films
Bias voltage
Magnetron sputtering
Structural properties
magnetron sputtering
carbon
electric potential
Substrates
Chromium
Silicon
Aluminum
chromium
X ray absorption near edge structure spectroscopy
fine structure
aluminum
X ray absorption
silicon
configurations

Keywords

  • a-c thin films
  • Raman
  • NEXAFS
  • different substrates
  • bias voltage

Cite this

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title = "Effect of substrate bias voltage and substrate on the structural properties of amorphous carbon films deposited by unbalanced magnetron sputtering",
abstract = "Amorphous carbon (a-C) films have been produced by unbalanced magnetron sputtering (UBMS) on silicon (Si), aluminium (Al), and chromium (Cr) substrates as a function of substrate bias voltage. The chemical bonding configurations were investigated by Raman and near-edge X-ray absorption fine structure (NEXAFS) spectroscopies. It was found that the structural changes induced by bias voltage are substrate-dependent, revealing the key role of the substrate type on film microstructures. The Raman G peak position and I-D/I-G ratio were strongly dependent on substrate material and negative bias voltage. Negative bias voltage had a small effect on the structure of carbon films on metal substrates (Al and Cr). However, the films on silicon showed significant change in the structure with bias voltage. The intensity and area of pi* peak at the C K (carbon) edge increased with the increase of substrate bias voltage. The NEXAFS analysis was in agreement with Raman observations, which clearly indicated an increase Of sp(2) content with increasing bias voltage. The films deposited in the low-bias voltage regime (50-100 V) showed reduced sp(2) configurations. The possible changes of structure with substrate bias are thoroughly discussed. (c) 2004 Elsevier B.V. All rights reserved.",
keywords = "a-c thin films, Raman, NEXAFS, different substrates, bias voltage",
author = "I Ahmad and SS Roy and PD Maguire and P Papakonstantinou and JAD McLaughlin",
note = "Symposium on Synthesis, Characterisation and Advanced Application of Amorphous Carbon Films, Strasbourg, FRANCE, MAY 24-28, 2004",
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TY - JOUR

T1 - Effect of substrate bias voltage and substrate on the structural properties of amorphous carbon films deposited by unbalanced magnetron sputtering

AU - Ahmad, I

AU - Roy, SS

AU - Maguire, PD

AU - Papakonstantinou, P

AU - McLaughlin, JAD

N1 - Symposium on Synthesis, Characterisation and Advanced Application of Amorphous Carbon Films, Strasbourg, FRANCE, MAY 24-28, 2004

PY - 2005/6

Y1 - 2005/6

N2 - Amorphous carbon (a-C) films have been produced by unbalanced magnetron sputtering (UBMS) on silicon (Si), aluminium (Al), and chromium (Cr) substrates as a function of substrate bias voltage. The chemical bonding configurations were investigated by Raman and near-edge X-ray absorption fine structure (NEXAFS) spectroscopies. It was found that the structural changes induced by bias voltage are substrate-dependent, revealing the key role of the substrate type on film microstructures. The Raman G peak position and I-D/I-G ratio were strongly dependent on substrate material and negative bias voltage. Negative bias voltage had a small effect on the structure of carbon films on metal substrates (Al and Cr). However, the films on silicon showed significant change in the structure with bias voltage. The intensity and area of pi* peak at the C K (carbon) edge increased with the increase of substrate bias voltage. The NEXAFS analysis was in agreement with Raman observations, which clearly indicated an increase Of sp(2) content with increasing bias voltage. The films deposited in the low-bias voltage regime (50-100 V) showed reduced sp(2) configurations. The possible changes of structure with substrate bias are thoroughly discussed. (c) 2004 Elsevier B.V. All rights reserved.

AB - Amorphous carbon (a-C) films have been produced by unbalanced magnetron sputtering (UBMS) on silicon (Si), aluminium (Al), and chromium (Cr) substrates as a function of substrate bias voltage. The chemical bonding configurations were investigated by Raman and near-edge X-ray absorption fine structure (NEXAFS) spectroscopies. It was found that the structural changes induced by bias voltage are substrate-dependent, revealing the key role of the substrate type on film microstructures. The Raman G peak position and I-D/I-G ratio were strongly dependent on substrate material and negative bias voltage. Negative bias voltage had a small effect on the structure of carbon films on metal substrates (Al and Cr). However, the films on silicon showed significant change in the structure with bias voltage. The intensity and area of pi* peak at the C K (carbon) edge increased with the increase of substrate bias voltage. The NEXAFS analysis was in agreement with Raman observations, which clearly indicated an increase Of sp(2) content with increasing bias voltage. The films deposited in the low-bias voltage regime (50-100 V) showed reduced sp(2) configurations. The possible changes of structure with substrate bias are thoroughly discussed. (c) 2004 Elsevier B.V. All rights reserved.

KW - a-c thin films

KW - Raman

KW - NEXAFS

KW - different substrates

KW - bias voltage

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DO - 10.1016/j.tsf.2004.11.158

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