Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum

V Svrcek, K Dohnalova, D Mariotti, MT Trinh, R Limpens, S Mitra, T Gregorkiewicz, K Matsubara, M Kondo

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant-free silicon nanocrystals (Si-ncs) by atmospheric pressure microplasma 3-dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si-ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1% up to 12%) within an important spectral range of the solar emission (2.3�3 eV). The Si-ncs QY is shown to be stable when Si-ncs are stored in ethanol at ambient conditions for three months.
LanguageEnglish
Pages6051-6058
JournalAdvanced Functional Materials
Volume23
Issue number48
DOIs
Publication statusPublished - 2013

Fingerprint

solar spectra
Quantum yield
Silicon
Nanocrystals
Photoluminescence
nanocrystals
photoluminescence
augmentation
silicon
engineering
microplasmas
multiplication
Surface-Active Agents
Atmospheric pressure
atmospheric pressure
Surface active agents
Ethanol
ethyl alcohol
surfactants

Keywords

  • solar cells
  • nanocrystals
  • carrier multiplication
  • semiconductors

Cite this

Svrcek, V ; Dohnalova, K ; Mariotti, D ; Trinh, MT ; Limpens, R ; Mitra, S ; Gregorkiewicz, T ; Matsubara, K ; Kondo, M. / Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum. In: Advanced Functional Materials. 2013 ; Vol. 23, No. 48. pp. 6051-6058.
@article{322850c256e94ddcb789866c8f5166ad,
title = "Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum",
abstract = "Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant-free silicon nanocrystals (Si-ncs) by atmospheric pressure microplasma 3-dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si-ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1{\%} up to 12{\%}) within an important spectral range of the solar emission (2.3{\^a}��3 eV). The Si-ncs QY is shown to be stable when Si-ncs are stored in ethanol at ambient conditions for three months.",
keywords = "solar cells, nanocrystals, carrier multiplication, semiconductors",
author = "V Svrcek and K Dohnalova and D Mariotti and MT Trinh and R Limpens and S Mitra and T Gregorkiewicz and K Matsubara and M Kondo",
year = "2013",
doi = "10.1002/adfm.201301468",
language = "English",
volume = "23",
pages = "6051--6058",
journal = "Advanced Functional Materials",
issn = "1616-301X",
number = "48",

}

Svrcek, V, Dohnalova, K, Mariotti, D, Trinh, MT, Limpens, R, Mitra, S, Gregorkiewicz, T, Matsubara, K & Kondo, M 2013, 'Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum', Advanced Functional Materials, vol. 23, no. 48, pp. 6051-6058. https://doi.org/10.1002/adfm.201301468

Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum. / Svrcek, V; Dohnalova, K; Mariotti, D; Trinh, MT; Limpens, R; Mitra, S; Gregorkiewicz, T; Matsubara, K; Kondo, M.

In: Advanced Functional Materials, Vol. 23, No. 48, 2013, p. 6051-6058.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum

AU - Svrcek, V

AU - Dohnalova, K

AU - Mariotti, D

AU - Trinh, MT

AU - Limpens, R

AU - Mitra, S

AU - Gregorkiewicz, T

AU - Matsubara, K

AU - Kondo, M

PY - 2013

Y1 - 2013

N2 - Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant-free silicon nanocrystals (Si-ncs) by atmospheric pressure microplasma 3-dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si-ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1% up to 12%) within an important spectral range of the solar emission (2.3�3 eV). The Si-ncs QY is shown to be stable when Si-ncs are stored in ethanol at ambient conditions for three months.

AB - Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant-free silicon nanocrystals (Si-ncs) by atmospheric pressure microplasma 3-dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si-ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1% up to 12%) within an important spectral range of the solar emission (2.3�3 eV). The Si-ncs QY is shown to be stable when Si-ncs are stored in ethanol at ambient conditions for three months.

KW - solar cells

KW - nanocrystals

KW - carrier multiplication

KW - semiconductors

U2 - 10.1002/adfm.201301468

DO - 10.1002/adfm.201301468

M3 - Article

VL - 23

SP - 6051

EP - 6058

JO - Advanced Functional Materials

T2 - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 48

ER -