Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum

V Svrcek, K Dohnalova, D Mariotti, MT Trinh, R Limpens, S Mitra, T Gregorkiewicz, K Matsubara, M Kondo

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23 Citations (Scopus)

Abstract

Substantial improvements of the absolute photoluminescence quantum yield (QY) for surfactant-free silicon nanocrystals (Si-ncs) by atmospheric pressure microplasma 3-dimensional surface engineering are reported. The effect of surface characteristics on carrier multiplication mechanisms is explored using transient induced absorption and photoluminescence QY. Surface engineering of Si-ncs is demonstrated to lead to more than 120 times increase in the absolute QY (from 0.1% up to 12%) within an important spectral range of the solar emission (2.3�3 eV). The Si-ncs QY is shown to be stable when Si-ncs are stored in ethanol at ambient conditions for three months.
Original languageEnglish
Pages (from-to)6051-6058
JournalAdvanced Functional Materials
Volume23
Issue number48
DOIs
Publication statusPublished - 2013

Keywords

  • solar cells
  • nanocrystals
  • carrier multiplication
  • semiconductors

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    Svrcek, V., Dohnalova, K., Mariotti, D., Trinh, MT., Limpens, R., Mitra, S., Gregorkiewicz, T., Matsubara, K., & Kondo, M. (2013). Dramatic Enhancement of Photoluminescence Quantum Yields for Surface-Engineered Si Nanocrystals within the Solar Spectrum. Advanced Functional Materials, 23(48), 6051-6058. https://doi.org/10.1002/adfm.201301468