Dissociation of tetramethylsilane for the growth of SiC nanocrystals by atmospheric pressure microplasma

Atta Ul Haq; Philip Lucke; Jan Benedikt; Paul Maguire; Davide Mariotti

doi:10.1002/ppap.201900243

Dissociation of tetramethylsilane for the growth of SiC nanocrystals by atmospheric pressure microplasma

Atta Ul Haq
, Philip Lucke
, Jan Benedikt
, Paul Maguire
, Davide Mariotti

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

107 Downloads (Pure)

Abstract

We report on mass spectrometry of residual gases after dissociation of tetramethylsilane (TMS) during the synthesis of silicon carbide (SiC) nanocrystals (NCs) by an atmospheric pressure microplasma. We use these results to provide details that can contribute to the understanding of the formation mechanisms of NCs. Mass spectrometry reveals the presence of high-mass polymerization products supporting the key role of neutral fragments and limited atomization. On this basis, we found that the loss of methyl groups from TMS, together with hydrogen abstraction, represents important paths leading to nucleation and growth. The combination of TMS concentration and NC residence time controls the NC mean size and the corresponding distributions. For higher precursor concentrations, the reaction kinetics is sufficiently fast to promote coalescence.

Original language	English
Article number	1900243
Pages (from-to)	1-11
Number of pages	11
Journal	Plasma Processes and Polymers
Volume	17
Issue number	5
Early online date	2 Mar 2020
DOIs	https://doi.org/10.1002/ppap.201900243
Publication status	Published (in print/issue) - 4 May 2020

Bibliographical note

Funding Information:
The authors acknowledge the support from the Marie Curie Initial Training Network (RAPID-ITN, Award No. 606889) and from the Engineering and Physical Sciences Research Council (EPSRC, Award No. EP/R023638/1).

Publisher Copyright:
© 2020 The Authors. Plasma Processes and Polymers published by Wiley-VCH Verlag GmbH & Co. KGaA

Copyright:
Copyright 2020 Elsevier B.V., All rights reserved.

Funding

The authors acknowledge the support from the Marie Curie Initial Training Network (RAPID-ITN, Award No. 606889) and from the Engineering and Physical Sciences Research Council (EPSRC, Award No. EP/R023638/1).

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

atmospheric pressure plasma
mass spectrometry
nanocrystals
silicon carbide
tetramethylsilane

Access to Document

10.1002/ppap.201900243Licence: CC BY

Pub. manuscriptFinal published version, 1.8 MBLicence: CC BY

Cite this

@article{2798d3b6f6a04734a0bcaae8e1307283,

title = "Dissociation of tetramethylsilane for the growth of SiC nanocrystals by atmospheric pressure microplasma",

abstract = "We report on mass spectrometry of residual gases after dissociation of tetramethylsilane (TMS) during the synthesis of silicon carbide (SiC) nanocrystals (NCs) by an atmospheric pressure microplasma. We use these results to provide details that can contribute to the understanding of the formation mechanisms of NCs. Mass spectrometry reveals the presence of high-mass polymerization products supporting the key role of neutral fragments and limited atomization. On this basis, we found that the loss of methyl groups from TMS, together with hydrogen abstraction, represents important paths leading to nucleation and growth. The combination of TMS concentration and NC residence time controls the NC mean size and the corresponding distributions. For higher precursor concentrations, the reaction kinetics is sufficiently fast to promote coalescence.",

keywords = "atmospheric pressure plasma, mass spectrometry, nanocrystals, silicon carbide, tetramethylsilane",

author = "Haq, \{Atta Ul\} and Philip Lucke and Jan Benedikt and Paul Maguire and Davide Mariotti",

note = "Funding Information: The authors acknowledge the support from the Marie Curie Initial Training Network (RAPID-ITN, Award No. 606889) and from the Engineering and Physical Sciences Research Council (EPSRC, Award No. EP/R023638/1). Publisher Copyright: {\textcopyright} 2020 The Authors. Plasma Processes and Polymers published by Wiley-VCH Verlag GmbH \& Co. KGaA Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2020",

month = may,

day = "4",

doi = "10.1002/ppap.201900243",

language = "English",

volume = "17",

pages = "1--11",

journal = "Plasma Processes and Polymers",

issn = "1612-8850",

publisher = "Wiley-VCH Verlag",

number = "5",

}

TY - JOUR

T1 - Dissociation of tetramethylsilane for the growth of SiC nanocrystals by atmospheric pressure microplasma

AU - Haq, Atta Ul

AU - Lucke, Philip

AU - Benedikt, Jan

AU - Maguire, Paul

AU - Mariotti, Davide

N1 - Funding Information: The authors acknowledge the support from the Marie Curie Initial Training Network (RAPID-ITN, Award No. 606889) and from the Engineering and Physical Sciences Research Council (EPSRC, Award No. EP/R023638/1). Publisher Copyright: © 2020 The Authors. Plasma Processes and Polymers published by Wiley-VCH Verlag GmbH & Co. KGaA Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2020/5/4

Y1 - 2020/5/4

N2 - We report on mass spectrometry of residual gases after dissociation of tetramethylsilane (TMS) during the synthesis of silicon carbide (SiC) nanocrystals (NCs) by an atmospheric pressure microplasma. We use these results to provide details that can contribute to the understanding of the formation mechanisms of NCs. Mass spectrometry reveals the presence of high-mass polymerization products supporting the key role of neutral fragments and limited atomization. On this basis, we found that the loss of methyl groups from TMS, together with hydrogen abstraction, represents important paths leading to nucleation and growth. The combination of TMS concentration and NC residence time controls the NC mean size and the corresponding distributions. For higher precursor concentrations, the reaction kinetics is sufficiently fast to promote coalescence.

AB - We report on mass spectrometry of residual gases after dissociation of tetramethylsilane (TMS) during the synthesis of silicon carbide (SiC) nanocrystals (NCs) by an atmospheric pressure microplasma. We use these results to provide details that can contribute to the understanding of the formation mechanisms of NCs. Mass spectrometry reveals the presence of high-mass polymerization products supporting the key role of neutral fragments and limited atomization. On this basis, we found that the loss of methyl groups from TMS, together with hydrogen abstraction, represents important paths leading to nucleation and growth. The combination of TMS concentration and NC residence time controls the NC mean size and the corresponding distributions. For higher precursor concentrations, the reaction kinetics is sufficiently fast to promote coalescence.

KW - atmospheric pressure plasma

KW - mass spectrometry

KW - nanocrystals

KW - silicon carbide

KW - tetramethylsilane

UR - https://pure.ulster.ac.uk/en/publications/dissociation-of-tetramethylsilane-for-the-growth-of-sic-nanocryst

UR - http://www.scopus.com/inward/record.url?scp=85081025775&partnerID=8YFLogxK

UR - https://onlinelibrary.wiley.com/doi/abs/10.1002/ppap.201900243

U2 - 10.1002/ppap.201900243

DO - 10.1002/ppap.201900243

M3 - Article

SN - 1612-8850

VL - 17

SP - 1

EP - 11

JO - Plasma Processes and Polymers

JF - Plasma Processes and Polymers

IS - 5

M1 - 1900243

ER -

Dissociation of tetramethylsilane for the growth of SiC nanocrystals by atmospheric pressure microplasma

Abstract

Bibliographical note

Funding

UN SDGs

Keywords

Access to Document

Other files and links

Fingerprint

Cite this