Abstract
A reliable measurement-based technique is introduced to extract dummy structure modelling parameters which are used to deembed the intrinsic S parameters of an on-chip HBT device. The entire parameter set of the dummy structure equivalent circuit is obtained by direct processing of the measurement data, avoiding the need for computer optimisation which often produces unrealistic results. An example is given to demonstrate the method, and the structure model is applied to reveal the intrinsic device S parameters of an HBT.
Original language | English |
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Title of host publication | IEEE International Conference on Microelectronic Test Structures |
Publisher | Publ by IEEE |
Pages | 27-30 |
Number of pages | 4 |
ISBN (Print) | 0780308573 |
Publication status | Published (in print/issue) - 1 Jan 1993 |
Event | 1993 IEEE International Conference on Microelectronic Test Structures - ICMTS 93 - Barcelona, Spain Duration: 22 Mar 1993 → 25 Mar 1993 |
Conference
Conference | 1993 IEEE International Conference on Microelectronic Test Structures - ICMTS 93 |
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City | Barcelona, Spain |
Period | 22/03/93 → 25/03/93 |