Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory

Thampula Kartheek; Samanwaya Kommu; Aditya Japa; Deepika Gupta

doi:10.1109/vlsisata65374.2025.11070010

Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory

Thampula Kartheek
, Samanwaya Kommu
, Aditya Japa
, Deepika Gupta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In Spintronics devices, STT has been widely utilized for magnetization switching. However, its high current requirements and potential barrier layer degradation make it unsuitable for future energy-efficient applications. Similarly, SRAM faces data retention limitations. Voltage-gated spin-orbit Torque has emerged as an advanced Spintronics device, integrating MRAM for enhanced performance, scalability, and energy efficiency to overcome these issues. VGSOT improves by enabling high-speed switching and reducing power. This article analyzes key parameters that optimize switching behaviour, minimize delay, and enhance energy efficiency, establishing VGSOT as a strong candidate for next-generation applications. These parameters include free layer thickness (tsl), metal oxide thickness (tox), MJT surface radius (r), anisotropy energy (Ki). This article explores additional parameters influencing switching behaviour and their impact on device performance. This paper enhances VGSOT energy efficiency by analyzing switching parameters using XOR and XNOR gates. Optimal parameter values are analyzed and displayed in the graph and table

Original language	English
Title of host publication	VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications
Publisher	IEEE
Pages	1-6
Number of pages	6
ISBN (Electronic)	979-8-3315-0286-7
ISBN (Print)	979-8-3315-0286-7, 979-8-3315-0287-4
DOIs	https://doi.org/10.1109/vlsisata65374.2025.11070010
Publication status	Published online - 14 Jul 2025
Event	2025 IEEE 5th International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA) - Bangalore, India Duration: 23 May 2025 → 24 May 2025

Publication series

Name	VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications

Conference

Conference	2025 IEEE 5th International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA)
Country/Territory	India
City	Bangalore
Period	23/05/25 → 24/05/25

Bibliographical note

Publisher Copyright:
© 2025 IEEE.

Funding

This work was supported by a grant from the Science and Engineering Research Board (SERB), Department of Science and Technology (DST), India (Project Number SUR/2022/003016).

Funder number
SUR/2022/003016

Keywords

VGSOT
Spintronics Memory
spin-Orbit-Torque
MTJ
Energy-Efficient Logic
XOR Gate

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/vlsisata65374.2025.11070010

Cite this

Kartheek, T., Kommu, S., Japa, A., & Gupta, D. (2025). Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory. In VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications (pp. 1-6). (VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications). IEEE. Advance online publication. https://doi.org/10.1109/vlsisata65374.2025.11070010

Kartheek, Thampula ; Kommu, Samanwaya ; Japa, Aditya et al. / Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory. VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications. IEEE, 2025. pp. 1-6 (VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications).

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abstract = "In Spintronics devices, STT has been widely utilized for magnetization switching. However, its high current requirements and potential barrier layer degradation make it unsuitable for future energy-efficient applications. Similarly, SRAM faces data retention limitations. Voltage-gated spin-orbit Torque has emerged as an advanced Spintronics device, integrating MRAM for enhanced performance, scalability, and energy efficiency to overcome these issues. VGSOT improves by enabling high-speed switching and reducing power. This article analyzes key parameters that optimize switching behaviour, minimize delay, and enhance energy efficiency, establishing VGSOT as a strong candidate for next-generation applications. These parameters include free layer thickness (tsl), metal oxide thickness (tox), MJT surface radius (r), anisotropy energy (Ki). This article explores additional parameters influencing switching behaviour and their impact on device performance. This paper enhances VGSOT energy efficiency by analyzing switching parameters using XOR and XNOR gates. Optimal parameter values are analyzed and displayed in the graph and table",

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Kartheek, T, Kommu, S, Japa, A & Gupta, D 2025, Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory. in VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications. VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications, IEEE, pp. 1-6, 2025 IEEE 5th International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA), Bangalore, India, 23/05/25. https://doi.org/10.1109/vlsisata65374.2025.11070010

Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory. / Kartheek, Thampula; Kommu, Samanwaya; Japa, Aditya et al.
VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications. IEEE, 2025. p. 1-6 (VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Kartheek, Thampula

AU - Kommu, Samanwaya

AU - Japa, Aditya

AU - Gupta, Deepika

PY - 2025/7/14

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N2 - In Spintronics devices, STT has been widely utilized for magnetization switching. However, its high current requirements and potential barrier layer degradation make it unsuitable for future energy-efficient applications. Similarly, SRAM faces data retention limitations. Voltage-gated spin-orbit Torque has emerged as an advanced Spintronics device, integrating MRAM for enhanced performance, scalability, and energy efficiency to overcome these issues. VGSOT improves by enabling high-speed switching and reducing power. This article analyzes key parameters that optimize switching behaviour, minimize delay, and enhance energy efficiency, establishing VGSOT as a strong candidate for next-generation applications. These parameters include free layer thickness (tsl), metal oxide thickness (tox), MJT surface radius (r), anisotropy energy (Ki). This article explores additional parameters influencing switching behaviour and their impact on device performance. This paper enhances VGSOT energy efficiency by analyzing switching parameters using XOR and XNOR gates. Optimal parameter values are analyzed and displayed in the graph and table

AB - In Spintronics devices, STT has been widely utilized for magnetization switching. However, its high current requirements and potential barrier layer degradation make it unsuitable for future energy-efficient applications. Similarly, SRAM faces data retention limitations. Voltage-gated spin-orbit Torque has emerged as an advanced Spintronics device, integrating MRAM for enhanced performance, scalability, and energy efficiency to overcome these issues. VGSOT improves by enabling high-speed switching and reducing power. This article analyzes key parameters that optimize switching behaviour, minimize delay, and enhance energy efficiency, establishing VGSOT as a strong candidate for next-generation applications. These parameters include free layer thickness (tsl), metal oxide thickness (tox), MJT surface radius (r), anisotropy energy (Ki). This article explores additional parameters influencing switching behaviour and their impact on device performance. This paper enhances VGSOT energy efficiency by analyzing switching parameters using XOR and XNOR gates. Optimal parameter values are analyzed and displayed in the graph and table

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SN - 979-8-3315-0287-4

T3 - VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications

SP - 1

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BT - VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications

PB - IEEE

T2 - 2025 IEEE 5th International Conference on VLSI Systems, Architecture, Technology and Applications (VLSI SATA)

Y2 - 23 May 2025 through 24 May 2025

ER -

Kartheek T, Kommu S, Japa A, Gupta D. Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory. In VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications. IEEE. 2025. p. 1-6. (VLSI SATA 2025 - 5th IEEE International Conference on VLSI Systems, Architecture, Technology and Applications). Epub 2025 Jul 14. doi: 10.1109/vlsisata65374.2025.11070010

Design Insights and Performance Analysis of VGSOT-MTJ for Energy-Efficient Logic and Memory

Abstract

Publication series

Conference

Bibliographical note

Funding

Keywords

UN SDGs

Access to Document

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