Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl2 plasma etching

SA Rizvi, PD Maguire, CMO Mahony, OA Okpalugo, CS Corr, WG Graham, SM Morley

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The etching of GaN was investigated in an Ar/Cl-2 inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl-2 plasma characteristics. Etch rates of approximate to500 nm/min were obtained at relatively low Cl-2 fractions of approximate to50%. The dominant emission species observed were Ga (at 294 nm) and up to six GaCl peaks between 320 and 345 nm. Plasma characterisation and ion flux indicate etch mechanisms that depend strongly on atomic chlorine but with increasing power and at low Cl-2, the significance of ion-based processes cannot be ruled out.
LanguageEnglish
Pages112-115
JournalPhysica Status Solidi C
Volume0
Issue number1
DOIs
Publication statusPublished - Dec 2002

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plasma etching
light emission
ions
optical emission spectroscopy
electrostatic probes
chlorine
etching
probes

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Rizvi, SA ; Maguire, PD ; Mahony, CMO ; Okpalugo, OA ; Corr, CS ; Graham, WG ; Morley, SM. / Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl2 plasma etching. In: Physica Status Solidi C. 2002 ; Vol. 0, No. 1. pp. 112-115.
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abstract = "The etching of GaN was investigated in an Ar/Cl-2 inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl-2 plasma characteristics. Etch rates of approximate to500 nm/min were obtained at relatively low Cl-2 fractions of approximate to50{\%}. The dominant emission species observed were Ga (at 294 nm) and up to six GaCl peaks between 320 and 345 nm. Plasma characterisation and ion flux indicate etch mechanisms that depend strongly on atomic chlorine but with increasing power and at low Cl-2, the significance of ion-based processes cannot be ruled out.",
author = "SA Rizvi and PD Maguire and CMO Mahony and OA Okpalugo and CS Corr and WG Graham and SM Morley",
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Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl2 plasma etching. / Rizvi, SA; Maguire, PD; Mahony, CMO; Okpalugo, OA; Corr, CS; Graham, WG; Morley, SM.

In: Physica Status Solidi C, Vol. 0, No. 1, 12.2002, p. 112-115.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Correlation of optical emission and ion flux with GaN etch rate in inductively coupled Ar/Cl2 plasma etching

AU - Rizvi, SA

AU - Maguire, PD

AU - Mahony, CMO

AU - Okpalugo, OA

AU - Corr, CS

AU - Graham, WG

AU - Morley, SM

N1 - International Workshop on Nitride Semiconductors (IWN 2002), AACHEN, GERMANY, JUL 22-25, 2002

PY - 2002/12

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AB - The etching of GaN was investigated in an Ar/Cl-2 inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl-2 plasma characteristics. Etch rates of approximate to500 nm/min were obtained at relatively low Cl-2 fractions of approximate to50%. The dominant emission species observed were Ga (at 294 nm) and up to six GaCl peaks between 320 and 345 nm. Plasma characterisation and ion flux indicate etch mechanisms that depend strongly on atomic chlorine but with increasing power and at low Cl-2, the significance of ion-based processes cannot be ruled out.

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