Complementary analysis techniques for the morphological study of ultrathin amorphous carbon films

P Lemoine, RW Lamberton, AA Ogwu, JF Zhao, PD Maguire, JAD McLaughlin

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

This article presents experimental results for morphological assessment of sub-50-nm thick hydrogenated amorphous carbon (a-C:H) overcoats. The films were grown by rf plasma enhanced chemical vapor deposition using Ar/C2H2 gas mixture onto heterogeneous (Al2O3-TiC) ceramic substrates. They were analyzed using complementary information from scanning electron microscopy, energy dispersive x-ray analysis and atomic force microscopy. We found that the bias deposition voltage and the nature of the substrate (Al2O3 or TiC regions) adversely affect both growth rate and microstructure. Argon inclusion in the C2H2 plasma during the first stage of growth is responsible for the observed effects. These results suggest that the amorphous carbon layer is denser on the TiC than on the Al2O3 region. (C) 1999 American Institute of Physics. [S0021-8979(99)00823-3].
LanguageEnglish
Pages6564-6570
JournalJournal of Applied Physics
Volume86
Issue number11
Publication statusPublished - Dec 1999

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x ray analysis
carbon
gas mixtures
argon
vapor deposition
atomic force microscopy
inclusions
ceramics
microstructure
scanning electron microscopy
electric potential
energy

Cite this

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title = "Complementary analysis techniques for the morphological study of ultrathin amorphous carbon films",
abstract = "This article presents experimental results for morphological assessment of sub-50-nm thick hydrogenated amorphous carbon (a-C:H) overcoats. The films were grown by rf plasma enhanced chemical vapor deposition using Ar/C2H2 gas mixture onto heterogeneous (Al2O3-TiC) ceramic substrates. They were analyzed using complementary information from scanning electron microscopy, energy dispersive x-ray analysis and atomic force microscopy. We found that the bias deposition voltage and the nature of the substrate (Al2O3 or TiC regions) adversely affect both growth rate and microstructure. Argon inclusion in the C2H2 plasma during the first stage of growth is responsible for the observed effects. These results suggest that the amorphous carbon layer is denser on the TiC than on the Al2O3 region. (C) 1999 American Institute of Physics. [S0021-8979(99)00823-3].",
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Complementary analysis techniques for the morphological study of ultrathin amorphous carbon films. / Lemoine, P; Lamberton, RW; Ogwu, AA; Zhao, JF; Maguire, PD; McLaughlin, JAD.

In: Journal of Applied Physics, Vol. 86, No. 11, 12.1999, p. 6564-6570.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Complementary analysis techniques for the morphological study of ultrathin amorphous carbon films

AU - Lemoine, P

AU - Lamberton, RW

AU - Ogwu, AA

AU - Zhao, JF

AU - Maguire, PD

AU - McLaughlin, JAD

PY - 1999/12

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N2 - This article presents experimental results for morphological assessment of sub-50-nm thick hydrogenated amorphous carbon (a-C:H) overcoats. The films were grown by rf plasma enhanced chemical vapor deposition using Ar/C2H2 gas mixture onto heterogeneous (Al2O3-TiC) ceramic substrates. They were analyzed using complementary information from scanning electron microscopy, energy dispersive x-ray analysis and atomic force microscopy. We found that the bias deposition voltage and the nature of the substrate (Al2O3 or TiC regions) adversely affect both growth rate and microstructure. Argon inclusion in the C2H2 plasma during the first stage of growth is responsible for the observed effects. These results suggest that the amorphous carbon layer is denser on the TiC than on the Al2O3 region. (C) 1999 American Institute of Physics. [S0021-8979(99)00823-3].

AB - This article presents experimental results for morphological assessment of sub-50-nm thick hydrogenated amorphous carbon (a-C:H) overcoats. The films were grown by rf plasma enhanced chemical vapor deposition using Ar/C2H2 gas mixture onto heterogeneous (Al2O3-TiC) ceramic substrates. They were analyzed using complementary information from scanning electron microscopy, energy dispersive x-ray analysis and atomic force microscopy. We found that the bias deposition voltage and the nature of the substrate (Al2O3 or TiC regions) adversely affect both growth rate and microstructure. Argon inclusion in the C2H2 plasma during the first stage of growth is responsible for the observed effects. These results suggest that the amorphous carbon layer is denser on the TiC than on the Al2O3 region. (C) 1999 American Institute of Physics. [S0021-8979(99)00823-3].

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